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Ultrasound imaging has become the preferred method for early detection of superficial organ lesions due to its non-invasive, economical, convenient, and radiation-free features. First, in the superficial organ ultrasound image analysis module based on local features, using Dense Sift as the local feature descriptor, the similarity sequence of the local features of the input image and the images in the sample library is calculated by the BOW algorithm and sorted in descending order of similarity. Secondly, using the wavelet transform’s local feature information representation capabilities in the time and frequency domains, the wavelet transform is performed on the small and identical feature information contained in the image to remove redundant information in each feature map to obtain a salient part of the image’s local features. Finally, through the analysis of elastic ultrasound images, a quantitative index that can be used to evaluate ultrasound images of superficial organs is proposed, which has higher accuracy and reliability than the current clinical methods for evaluating ultrasound images of superficial organs. By analyzing the features of superficial organ ultrasound images, it is proposed that the overall features of superficial organ ultrasound images are more conducive to distinguishing benign and malignant lesions than local features. Based on the initial localization of the lesion, the global features of the superficial organ ultrasound image were combined with the local features of the B-ultrasound image, and the method of combining global features with local features was used to classify and achieved good results.

In this study, a kind of melanin lipid nanovesicle contrast agent (M-lvca) material with good light absorption and melanin doping is proposed. In this contrast material, lipid nanospheres containing melanin are obtained by ether titration. Then, it is prepared by freeze-drying. In the experimental part, the shape, structure, particle size and absorption spectrum of the material are studied. In vitro agarose gel model, the ultrasound/photoacoustic analysis of the contrast agent is carried out to detect the effect of different concentration of contrast agent on phagocytosis of cells. In the diagnosis of breast cancer, the enhancement boundary, the distribution of contrast agent, the enhancement shape, the range change after enhancement, and the penetration of blood vessels are detected. The experimental results show that the contrast agent has the characteristics of microsphere shape, uniform distribution and strong light absorption ability in the wavelength range of 100 nm∼900 nm. In vitro ultrasound imaging/photoacoustic imaging test, the contrast agent has a good imaging ability. With the increase of the concentration, the imaging ability will be further enhanced. In the diagnosis of breast cancer, there is a significant difference in the indexes related to ultrasound diagnosis of breast cancer after adding M-lvca contrast agent (P < 0.05). Only a few indexes such as enhancement intensity and perfusion defect have no significant difference (P > 0.05). In this study, the proposed M-lvca material can improve the imaging effect of related indicators in the early diagnosis of breast cancer, which is helpful to improve the accuracy of breast cancer diagnosis.

In this article, we have developed an amorphous CuNiSnO (a-CNTO), which is a p-type amorphous oxide semiconductor (AOS). The a-CNTO thin films were deposited by the pulsed laser deposition method, having high amorphous quality with a rather smooth surface. The a-CNTO films grown at 100 °C exhibited the smoothest surface (root-mean-square roughness of 0.25 nm), highest visible transparency (~85%), and most favorable p-type conductivity (hole concentration of ~1015 cm−3), which are very suitable for electronic device fabrication. Thus, the obtained p-type a-CNTO thin-film transistors (TFTs) have an ON-to- OFF current ratio of $\sim 1.2\times 10^{{5}}$ , the threshold voltage of −2.3 V, the field-effect mobility of 1.37 cm2/Vs, and subthreshold swing of 0.70 V/decade. As a new kind of p-type AOS, the achievement of the p-type a-CNTO TFTs and the low-temperature processes may open the door for practical applications in transparent and flexible electronics.

Memristors based on amorphous oxide semiconductors (AOSs) have attracted considerable attention recently. Here we present the study of amorphous ZnSnO (a-ZTO) memristors. The a-ZTO memristors were fabricated with Al layers as the bottom and top electrodes. The a-ZTO thin films, deposited by pulsed laser deposition, could be formed on the Al layer uniformly, and the Al layers were effective electrodes for a-ZTO memristors. It was verified that the a-ZTO memristors had obvious resistive switching (RS) behaviors, with a high ratio (∼103) of high-resistance and low-resistance states. Almost the same current-voltage curves were observed for five cycles, revealing the stable and reliable nature of devices. Our study demonstrated the a-ZTO memristors is a potential candidate to produce high-quality resistive random-access memories, which may open a path to applications of memristors based on indium-free AOSs.

Ultrathin amorphous InZnO ( ${a}$ -IZO) films and the corresponding ultrathin-film transistors (UTFTs) have been prepared by pulsed laser deposition (PLD) for the first time here. With ultrathin amorphous ZnSnO ( ${a}$ -ZTO) films and the related UTFTs as a comparison, the properties of ultrathin a-IZO films and behaviors of the corresponding UTFTs were studied in detail. Also, we have taken a new approach to compare the content of oxygen vacancies ( ${V}_{\textit {O}}$ ) in amorphous oxide semiconductors (AOSs) of different systems, which explains their different properties and behaviors well. The thickness of the ultrathin a-IZO film is approximately 3.1 nm. Compared to ultrathin a-ZTO films, ultrathin a-IZO films depict lower ${V}_{O}$ content and lower carrier concentration. In addition, ultrathin ${a}$ -IZO films display very high transmittance over 95% in the visible region. Furthermore, a-IZO UTFTs exhibit better performance than a-ZTO UTFT, such as a lower off-current of 3.3 $\times \,\,10^{-10}$ A, a larger ${I} _{ \mathrm{\scriptscriptstyle ON}}/{I} _{ \mathrm{\scriptscriptstyle OFF}}$ ratio of $1.5\times 10^{7}$ , a larger $\mu _{\text {sat}}$ of 20.7 cm $^{2}\,\,{V} ^{-1}\,\,{s} ^{-1}$ , a smaller ${V} _{\text {th}}$ of 1.2 V (operating in the enhancement mode), a lower subthreshold swing (SS) of 0.303 V/decade, and a lower ${N} _{t}$ of $8.9\times 10^{11}$ cm−2. Meanwhile, the long-term stability of a-IZO UTFT is similar to a-ZTO UTFT. Above all, a-IZO UTFTs exhibit excellent performance and may be a promising candidate for future displays.

Amorphous zinc–magnesium–tin oxide (a-ZMTO), a new kind of amorphous oxide semiconductors (AOSs), was prepared for fabricating thin-film transistors (TFTs) by a combustion solution process. The prepared ZnMgSnO films have a high amorphous quality with smooth surface, evenly distributed elements, as well as high visible transmittance above 80% with a width of band gap of around 3.12 eV. The effects of Mg content on properties of films and performance of devices were investigated in detail. An appropriate Mg content could efficiently suppress the oxygen vacancy (VO) concentration and make the surface smoother, thereby enhancing the properties of films and performance of related a-ZMTO TFTs. The a-ZMTO TFTs exhibited acceptable performances, with field-effect mobility (μFE) of 0.083 cm2 V−1 S−1, on/off current ratio (Ion/Ioff) of around 3.0 × 104, and threshold voltage (Vth) of 1.42 V. The a-ZMTO films and ZMTO TFTs may offer an option of indium-free AOS materials for future application in transparent electronics.

In this study, co-gasification and catalytic co-gasification of petroleum coke with coal at high temperature are studied. The structural characteristics of high temperature petroleum coke and bituminous coal pyrolysis char are compared, and the effects of blending ratio on the gasification reactivity and synergy are explored. The effect of catalyst on the co-gasification is also investigated. The results show that, high temperature petroleum coke shows a smoother surface morphology and has a higher degree of graphitization than the coal char, as a result, the gasification reactivity of the former is much lower than the latter. The coal char gasification process shows only one reaction stage, while the high temperature petroleum coke has two significant stages. The gasification reactivity of the blends increases with the coal blending ratio, and the largest increment is obtained when high temperature petroleum coke and coal char is blended at 1:2. As the co-gasification proceeds with the temperature, it first shows an inhibition effect, then gradually a synergistic effect. The temperature at which the synergistic effect appears decreases with the coal blending ratio increasing. However, the co-gasification reaction rate and reactivity get worse at carbon conversion rate large than 0.5, leading to a longer reaction time. When catalytic co-gasification, NaAlO2 significantly increases the reactivity at carbon conversion rate larger than 0.2, and the temperature needed to finish the gasification for high temperature petroleum coke is reduced from 1460 °C to 1150 °C.

The wide spread and sharing of considerable information promotes the development of many industries such as the health care and so on. However, data owners should pay attention to the problem of privacy preservation during the sharing of data. A risk assessment system is presented in this paper. The system can assess the risk of privacy disclosure due to the sharing of data, and help data owners to evaluate whether it is safe or not to share the data.

We examine an amorphous oxide semiconductor (AOS) of ZnRhCuO. The a-ZnRhCuO films are deposited at room temperature, having a high amorphous quality with smooth surface, uniform thickness and evenly distributed elements, as well as a high visible transmittance above 87% with a wide bandgap of 3.12 eV. Using a-ZnRhCuO films as active layers, thin-film transistors (TFTs) and gas sensors are fabricated. The TFT behaviors demonstrate the p-type nature of a-ZnRhCuO channel, with an on-to-off current ratio of ∼ 1 × 103 and field-effect mobility of 0.079 cm2V–1s–1. The behaviors of gas sensors also prove that the a-ZnRhCuO films are of p-type conductivity. Our achievements relating to p-type a-ZnRhCuO films at room temperature with TFT devices may pave the way to practical applications of AOSs in transparent flexible electronics.

Ultra-thin amorphous ZnSnO (a-ZTO) films were deposited by pulsed laser deposition at room temperature and annealed at various temperatures for ultra-thin-film transistors (UTFTs). The thicknesses of the ultra-thin a-ZTO films are approximately 3.1 nm. The electrical resistivity of the nanofilms decreases greatly with the annealing temperature initially increasing. All the UTFTs with annealing temperature ranging from 250 to 450 °C exhibit good switching properties operating in the enhancement mode with the field-effect mobility of above 8.2 cm2 V−1 s−1. The annealing treatment exhibits extreme importance for the UTFTs to obtain better performance as oxygen vacancy is controlled easily in the ultra-thin films by annealing. The 350 °C-annealed a-ZTO UTFT depicts the largest field-effect mobility of 20.9 cm2 V−1 s−1, the minimum threshold voltage of 2.3 V, the minimum subthreshold swing of 0.339 V/decade, the minimum density of the interfacial trap states of 1.02 × 1012 cm−2 and a large on/off current ratio of 3.3 × 107. Besides, the UTFT with the annealing temperature of 450 °C depicts excellent long-term stability under bias stress due to the least oxygen vacancies. The observations will offer basic design guideline for improvement and future applications of UTFTs.

As the most common malignant primary bone tumor in childhood, osteosarcoma (OS) maintains a high recurrence, despite the significant improvements in the overall survival rate of high-grade OS patients during the recent decades. Therefore, a novel therapy strategy is required for OS treatment. Recently, various microRNAs (miRNAs or miRs) have been confirmed as deregulated in OS, and the miR-155 dysregulation in OS has been discovered by the microarray analysis. In the present study, the regulation of miR-155 on the OS cell proliferation, migration and invasion on the MG-63 cells was explored in vitro. The miR-155 mimics were found to promote cell proliferation, colony formation, migration and invasion significantly, compared to the control miRNA. An miR-155 inhibitor was also used to evaluate whether miR-155 served as a therapeutic target for OS. The results demonstrated that the miR-155 inhibitor significantly reduced the proliferation, colony formation, migration and invasion of the MG-63 OS cells. Thus, the study confirmed the oncogenic regulation on the OS progression of miR-155, which could serve as a therapeutic target with an miR-155 inhibitor.

Ultrathin amorphous ZnSnO (a-ZTO) films and ultrathin amorphous ZnGeSnO (a-ZGTO) films with various Ge contents were deposited by pulsed laser deposition for ultra-thin-film transistors (UTFTs). The thicknesses of the channel layers are approximately 3.2 nm. The properties of these ultrathin films and behaviors of these UTFTs were comparatively studied in detail. The a-ZTO ultrathin film exhibited a low concentration of the oxygen vacancy (VO) compared to a-ZGTO ultrathin films. Among all the UTFTs, the a-ZTO UTFT demonstrated the undoubtedly best performance with an on/off current ratio of more than 107, the largest field-effect mobility of 23.2 cm2 V−1 s−1, a positive threshold voltage of 2.0 V, a very small subthreshold swing of 0.31 V/decade, and the best long-term stability under bias stress, suggesting that the introduction of VO suppressors is dispensable with such a small thickness. Above all, the concentration of the oxygen vacancy is easily controlled in the ultrathin a-ZTO nanofilms, leading to the UTFTs operating in the enhancement mode with a high field-effect mobility of 23.2 cm2 V−1 s−1 and excellent long-term stability. The a-ZTO ultrathin film and ultra-thin-film transistor are very potential for future electrical applications with their excellent properties.