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Objective: Oncogenes have been shown to be drivers of non-small cell lung cancer (NSCLC), yet the tumor suppressing genes involved in lung carcinogenesis remain to be systematically investigated. This study aimed to identify tumor suppressing ubiquitin pathway genes (UPGs) that were critical to lung tumorigenesis. Methods: The 696 UPGs were silenced by an siRNA screening in NSCLC cells; the potential tumor suppressing UPGs were analyzed, and their clinical significance was investigated. Results: We reported that silencing of 11 UPGs resulted in enhanced proliferation of NSCLC cells, and four UPGs (UBL3, TRIM22, UBE2G2, and MARCH1) were significantly downregulated in tumor samples compared to that in normal lung tissues and their expression levels were positively associated with overall survival (OS) of NSCLC patients. Among these genes, UBL3 was the most significant one. UBL3 expression was decreased in tumor samples compared to that in paired normal lung tissues in 59/86 (68.6%) NSCLCs, was correlated with TNM stage and sex of NSCLC patients, and was significantly higher in non-smoking patients than in smoking patients. Silencing UBL3 accelerated cell proliferation and ectopic expression of UBL3 suppressed NSCLC in vitro and in vivo. Conclusions: These results showed that UBL3 represented a tumor suppressor in NSCLC and may have potential for use in therapeutics and for the prediction of clinical outcome of patients.

The synergistic effects of the total ionizing dose (TID) and analog transient radiation effects in electronics (ATREE) in vertical NPN (VNPN) bipolar transistor were explored experimentally. The technology computer-aided design (TCAD) simulation was also accomplished to analyze the impact of TID-induced positive charge and Si/SiO2 interface traps on the primary and secondary photocurrents of the transistor under the transient ionizing radiation environments. The results indicate that the TID-ATREE synergistic effects in the VNPN bipolar transistor include faster decrease of secondary photocurrents and shorter transient durations across various dose rates. TID-induced Si/SiO2 interface traps enhance the carrier recombination, decreasing the number of electrons emitted from the emitter to the base region near the oxide layer and the number of carriers collected by the collector contact, which is the dominant cause of the synergistic effects, however, TID-induced positive charge in the oxide layer has little influence.

Latch up (LU), an inherent destructive phenomenon owning to P-N-P-N structure in bulk Complementary Metal-Oxide -Silicon (CMOS) circuits, is highly sensitive to pulsed irradiation. A criterion for LU is concluded, and the impact of total ionizing dose (TID) on LU criterion is discussed. In the progress of accumulating TID, generated oxide trapped charges and interface states enhance surface recombination in the base of the parasitic bipolar junction transistor (PBJT), leading to increase of the base recombination current; and the trapped charges in the shallow trench isolation (STI) can also increase leakage current. In spite of hindering effect of the base recombination in PBJTs to LU, the STI leakage current plays a dominant role to gain sensitivity of LU. Experimental results confirm the fact that TID can lower the dose rate threshold for LU. For instance, the threshold in the device with doses 150 krad(Si) is nearly 50% lower than that in the pristine device. Simulations in SPICE and Sentaurus are conducted, and the results agree with that of experiments.

several types of Low drop-out (LDO) regulator, manufactured in different technologies, are irradiated in the transient radiation environment. The experimental results show that outputs of all of LDOs are disrupted when irradiated. For the LDO manufactured in the complimentary metal-oxide -semiconductor (CMOS) technology, latch up (LU) occurs at the lower dose rate due to the parasitical PNPN structure, and the output voltage drops to zero. For the LDOs manufactured in the bipolar technology, if based on the two bipolar junction transistors (BJTs) band gap reference source, the output voltages are pulled up to the higher levels. If based on the three BJTs band gap reference source, the output voltages are pulled down to the lower levels. However, the output voltage disturbances of the bipolar LDOs recover in several micro minutes. In addition, different types of load result in different radiation responses of LDOs.

The multi-mobile intelligence agent group has the characteristic of “individual intelligence and communication network constitute overall movement behavior”, each individual of this group has a certain autonomous ability. Position of a single mobile agent may be lost due to weather or geographical reasons, so that certain agent may calculate proximity position by data information obtained from agents adjacent to this agent, synchronization voting method should be applied as receiving information for reconstruction of historical moving path for this agent, according to amounts and location of mobile agents adjacent to this agent to construct voting method, voting result confirmed validity of data by 2 of 3 synchronization voting method or 2 of 2x2 synchronization voting method.

This paper investigates the core voltage’s reduction of electronics induced by transient ionizing radiation and how it influences TREE (Transient Ionizing Radiation Effect of Electronics) on SRAM. 6T memory cell of 40nm SRAM was constructed in TCAD and the dose-rate upset threshold of it was 1.5×1011Gy(Si)/s when working at nominal core voltage. However, the transient ionizing radiation experiment of 40nm SRAM carried out on “QiangGuang-I” accelerator indicated that the dose-rate upset threshold of the whole SRAM chip was1.0×107 Gy(Si)/s. And the simulation results indicated that the reduction of memory cell’s core voltage would reduce the dose-rate upset threshold significantly as the memory cell’s SNM (Static Noise Margin) decreases with the reduction of memory cell’s core voltage. As there is LDO (Low Dropout Regulator) inside SRAM for conversion of voltage from I/O to core, we also did the transient ionizing radiation experiment of LDO and the experimental results showed that the output voltage of LDO would decrease during transient ionizing radiation which verified the probability of the reduction of memory cell’s core voltage during transient ionizing radiation. Combined with the experiment and simulation results, it can be assumed that the reduction of core voltage during radiation is a main reason causing SRAM upset.

Transient ionization radiation experiment is carried out with the "Qiang Guang-I" accelerator in Northwest Institute of Nuclear Technology to investigate the dose rate damage pattern of 0.18μm SRAM (Static Random Access Memory). The experiment result shows that the transient ionization radiation damage pattern of 0.18μm SRAM (static random access memory) is mainly because of the photocurrent generated in memory cell flowing into the power bus which reduces core voltage of memory cell during transient radiation. Spice is also used to demonstrate the reliability between the transient ionization radiation sensitivity and the reduction of core voltage which can reduce the static noise margin of the SRAM memory cell.

Total ionizing dose (TID) can cause the threshold voltage of complementary metal oxide semiconductor (CMOS) transistors to shift backward and the current gain of the parasitic triode to degrade; these two factors will compete while devices accumulating TID expose to transient ionizing irradiation, and the data status depends on the dominant one. Micrometer (CD4007) and sub-micrometer (IDT71256) CMOS devices were investigated on the synergistic effects of TID and transient ionizing irradiation. The results reveal that the current gain degradation induced by TID, for CD4007, plays a significant role; whereas the shrink of the static noise margin (SNM) induced by TID, for IDT71256, is the dominant factor and the influence of the parasitic transistor can be ignored. The reasons are sub-micrometer devices have the thinner gate oxide, resulting in the current gain degradation induced by TID not evident; and the collection volume of photocurrent is too small to generate enough primary photocurrent for driving the parasitic transistor on. In sum, the synergistic effects of TID and transient ionizing irradiation are evident in large-scale devices, while not evident in small-scale devices.

This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits. One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor (CMOS) device IDT6116, the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS devices. The results show that the L7805CV’s output interruption after transient irradiation can prevent latch-up from occurring on the second stage circuit. The demanded minimum interruption duration to avoid latch-up varies with dose rate, and this is confirmed by the experimental results.

After the reasons for self-oscillation are analyzed, several self-oscillation elimination methods are introduced to the design of a low noise amplifier (LNA) which works in the LS-band. These methods include: adding a source negative feedback stability circuit; improving the decoupling circuit; applying change to the DC power to adjust the static operating point slightly to deal with circuit mismatching; adjusting the layout of the microstrip circuit; improving grounding; improving the rectifying bias circuit.

Linear response theory was used to predict threshold-voltage shifts for CC4007-NMOS device at dose rates of 0.1, 2.3, 44 and 91rad(Si)/s. These predictions were compared with the threshold-voltage shifts obtained after 60Co irradiations actually performed at these dose rates, and the agreement is excellent. Also, we use the linear response theory to predict the response of CC4007-NMOS device during radiation and 25℃ annealling for high and low-dose-rates. According to the predictions, under the same conditions of radiation and annealling, the threshold-voltage shifts caused by high dose-rate irradiation after room temperature annealling were equal to that by low-dose-rate irradiation within the limit of error, but the total times for both were the same. Finally, the failure doses for CC4007-NMOS device at different dose rates of irradiation were predicted also using the linear response theory.