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Two patients presented with initial symptoms of headache and fever, and two weeks later had disturbance of consciousness. Cerebrospinal fluid (CSF) showed pleocytosis >500×106/L. Magnetic resonance imaging (MRI) showed multiple brain lesions at sites of high aquaporin-4 (AQP-4) expression. Case 1 presented optic neuritis four years after the first attack and case 2 had symptoms of myelitis three weeks after headache. Serum AQP-4 antibody was positive in both cases, and the diagnosis of neuromyelitis optica spectrum disorder (NMOSD) was made. Accordingly, NMOSD can initially present as meningoencephalitis mimicking intracranial infection, and the characteristic MRI imaging is quite critical for differentiation.

In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquids have been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As a result, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafer sample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs can be promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapid and cost-effective. GaN-based light emitting diodes (LEDs), corrosive liquid, light output power, textured ITO

An InGaN/GaN blue-violet light-emitting diode (LED) structure and an InGaN/GaN blue LED structure were grown sequentially on the same sapphire substrate by metal-organic chemical vapor deposition (MOCVD). At the low injection current, the intensity ratio of blue-violet light to blue light was almost constant, while the blue light intensity increased gradually with increasing injection current when the latter was more than 40 mA. High color rendering has been realized for a Y3Al5O12:Ce3+ phosphor-converted white LED based on dual-blue-emitting active layers relative to a single blue-emitting active layer at the same injection current.

Using self-alignment photolithography and copper electroforming techniques, we have developed a size of 1mm×1mm high power GaN-based violet LED embedded in a reflective cup-shaped copper heat spreader. The packaged LED chip sample with copper heat spreader driven at 1 A current yield the light output power of 310 mW, about 1.55 times to the conventional LED. Moreover, the power efficiency is remarkably increased from 4.21% to 6.61% at the same driven current. These results indicate that the novel heat dissipation, a direct Cu heat spreader by a metal connection to the device, did efficiently extract the heat from the chip. The result exhibit a new solution to thermal management of high power GaN-based violet LED samples.