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A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching and 1000 cycles of bending.

Perovskite BaTiO3 (BTO) nanodots were deposited on LaAlO3 (LAO) substrates using the BTO precursor solutions with various low concentrations. Subsequently, YBa2Cu3O7-x (YBCO) superconducting films were deposited on the BTO-dots decorated LAO substrates through a low-fluorine solution method. High BTO dots (with heights of 30–50 nm) and short BTO nanodots (with heights less than 30 nm) were produced using a solution with a concentration of 0.025 mol/L, which could not be produced using solutions of other concentrations. We found a significantly enhanced flux pining force in the YBCO film deposited on the BTO-dots decorated LAO substrate. Because of the joint pinning effect of the high BTO dots and short BTO dots, the high-performance YBCO film with a critical current density of 8.42 MA/cm2 and a flux pinning force of 9.58 GN/m3 was produced on the LAO substrate.

We demonstrate a low-cost and facile photochemical solution method to prepare the ZrO2 resistive switching arrays as memristive units on flexible PET/ITO substrates. ZrO2 solution sensitive to UV light of 337 nm was synthesized using zirconium n-butyl alcohol as the precursor, and benzoylacetone as the complexing agent. After the dip-coated ZrO2 gel films were irradiated through a mask under the UV lamp (with wavelength of 325-365 nm) at room temperature and rinsed in ethanol, the ZrO2 gel arrays were obtained on PET/ITO substrates. Subsequently, the ZrO2 gel arrays were irradiated by deep UV light of 254 and 185 nm at 150 °C, resulting in the amorphous ZrO2 memristive micro-arrays. The ZrO2 units on flexible PET/ITO substrates exhibited excellent memristive properties. A high ratio of 104 of on-state and off-state resistance was obtained. The resistive switching behavior of the flexible device remained stable after being bent for 103 times. The device showed stable flexibility up to a minimum bending diameter of 1.25 cm.

The matching of urban denizens' trip structure and transportation structure is a precondition to promoting its orderly development. Considering the whole trip process, this paper also considers the whole modes' public trip time value function and then with the help of equal time point, the authors establish the equal time point function and then design the algorithm. The example shows that this model can optimize an urban comprehensive public transportation network and it can improve the service level under the condition that transit network density increases.