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AlGaN/GaN Schottky barrier diode (SBD) temperature sensor with low turn-on voltage was fabricated by employing the recessed anode structure. This AlGaN/GaN SBD demonstrates good rectification in a broad temperature scope from 298 to 473 K. Compared with common planar diode, the recessed anode SBD shows a relatively lower turn-on voltage and better Schottky contact characteristics. The temperature-dependent forward voltage at a fixed current displays great linearity, contributing to a sensitivity of about 1.0 mV/K. The calculated sensitivities exhibit the downtrend by increasing current level, which is in agreement with the thermionic emission (TE) model. The recessed anode AlGaN/GaN SBDs show good potential in temperature sensor application.

The photocatalytic water splitting has a stupendous role to generate renewable hydrogen. However, the overall water splitting reaction is limited by the sluggish oxidation step. Bismuth vanadate (BiVO4) has been identified as one of the most promising n-type semiconductors for photocatalytic water oxidation due to its small energy gap and favorable band alignment. Thus, it is necessary to summarize the recent progress done on BiVO4 for the guidance of future research. In this review, we have discussed recent strategies that have been adopted to boost its photoconversion efficiency at three different levels: (1) facet control, (2) morphological control and, (3) interfacial control. The roles of high indexed facets, anisotropic morphologies, and mediator-based Z schemes are comprehensively discussed and the emphasis is given to find the suitable structural, morphological, and interfacial combination of BiVO4 for efficient water oxidation.

High-performance solar-blind UV detector with high response and fast speed is needed in multiple types of areas, which is hard to achieve in one device with a simple structure and device fabrication process. Here, the effects of Ag nanoparticles (NPs) with different sizes on UV response characteristics of the device are studied, the Ag NPs with different sizes that are made from a simple vacuum anneal method. Ag NPs with different sizes could modulate the peak response position of the mixed-phase MgZnO detector from near UV range (350 nm) to deep UV range (235 nm), and the enhancement effect of the Ag NPs on the UV response differs much with the crystal structure and the basic UV response of the MgZnO thin film. When high density 20-40 nm Ag NPs is induced, the deep UV (235 nm) response of the mixed-phase MgZnO detector is increased by 226 times, the I uv/I dark ratio of the modified device is increased by 17.5 times. The slight enhancement in UV light intensity from 20 to 40 nm Ag NPs induces multiple tunnel breakdown phenomena within the mixed-phase MgZnO thin film, which is the main reason for the abnormal great enhancement effect on deep UV response of the device, so the recovery speed of the modified device is not influenced. Therefore, Ag NPs with different sizes could effectively modulate the UV response peak position of mixed-phase MgZnO thin films, and the introduction of Ag NPs with high density and small size is a simple way to greatly increase the sensitivity of the mixed-phase MgZnO detector at deep UV light without decreasing the device speed. Published version This work was supported by the National Natural Science Foundation of China under grant nos. (51872187, 11774241, 51371120, 51302174, 61704111, 61504083, and 61574051), the Natural Science Foundation of Guangdong Province (2016A030313060 and 2017A030310524), the Public Welfare Capacity Building in Guangdong Province (2015A010103016), the Project of Department of Education of Guangdong Province (2014KTSCX110), the Science and Technology Research Items of Shenzhen (JCYJ20170818144255777, JCYJ20170818144212483, JCYJ20180507182248925, JCYJ201602261920, JCYJ20170818143417082, and JCYJ20160226192033020), the Science and Technology Foundation of Shenzhen, and the National Key Research and Development Program of China (2017YFB0404100 and 2017YFB0403000).

In this study, pulsed laser deposition method (PLD) was employed to grow MgxZn1-xO films on quartz substrates. The optimal deposition temperature of 300 °C for MgxZn1-xO film was decided and Mg0.38Zn0.62O, Mg0.56Zn0.44O and Mg0.69Zn0.31O films were grown respectively using MgxZn1-xO targets with different Mg contents (x = 0.3, 0.5 and 0.7). As-deposited Mg0.38Zn0.62O film possessed the mixed-phase (hexagonal and cubic phase) structure, appropriate band gap of 4.68 eV and smaller surface roughness of 1.72 nm, and the solar-blind photodetector (PD) based on it was fabricated. The key features of our PD are the cutoff wavelength of 265 nm lying in solar-blind band, lower dark current (Idark) of 88 pA, higher peak responsivity of 0.10 A/W and bigger Ilight/Idark ratio of 1688, which provide the new idea for the application of solar-blind PDs based on MgxZn1-xO films.

In this paper, we report aqueous solution-processed boron-doped gallium oxide dielectric thin films for high-performance oxide thin-film transistors. The role of B incorporation on the microstructu...

Recently, metal surface plasma technology has been widely used to improve the quantum efficiency of optoelectronic devices, such as ZnO light-emitting diodes (LEDs). In this work, Ag films with the appropriate thickness were prepared by evaporation and annealed, and a layer of ZnCdO films with different Cd concentrations was grown on the Ag films by the pulsed laser deposition method. During this process, the changes in the Cd concentrations caused the near-band edge (NBE) emission of the ZnCdO films to be continuously adjusted in the ultraviolet to green wavelength range by controlling the oxygen pressure. The prepared Ag nanoparticles and ZnCdO composite films were used to study the metal localized surface plasmon (LSP) effect. The results show that the enhanced or reduced photoluminescence intensity of ZnCdO NBE depends on the probability of electrons transport to either the LSP level or the Fermi level of the metal. This discovery provides an important theoretical basis for the preparation of ZnCdO semiconductor LEDs in the future.

A p-GaN/i-MgO/n-ZnO nanorod array (NRA) heterojunction light-emitting diode has been fabricated. Its room-temperature electroluminescence spectra under different forward biases revealed a strong emission band across the whole visible region, which was blue-shifted when increasing the forward bias. The origin of this visible emission is considered to be related to oxygen vacancy (VO) defects in different valence states, where the blue emission (∼ 460 nm) comes from neutral oxygen vacancy (VOX ) defects and the green emission (∼ 520 nm) from singly charged oxygen vacancy (VO+ ) defects, while the yellow (∼ 580 nm) and red emission (∼ 670 nm) are attributed to doubly charge oxygen vacancy (VO++ ) defects. These VO defects in different states can convert into one another under different excitation conditions, resulting in the blue-shift of the emission peak as the forward voltage is increased.

As an n-type oxide semiconductor, Ga2O3 shows great promise in solar-blind ultraviolet (UV) photodetectors due to its adequate band gap, high absorption coefficient, high thermal and chemical stability, high breakdown voltage, and high sensitivity to UV light. In order to investigate the photoresponse of the Ga2O3 photodetector with different crystallization status, we fabricated a series of β-Ga2O3 thin films on a sapphire substrate via pulsed laser deposition with different deposition temperatures from 250°C to 650°C. X-ray diffraction and scanning electron microscopy result showed crystallization enhancement due to the increasing of deposition temperature, and the crystallization procedure started at ∼ 450°C. Optical analysis indicated a blue shift present at the absorption edge (from 4.6 eV to 5.1 eV) with temperature increasing from 450°C to 650°C, showing modulation feasibility in the band gap due to temperature dependence. In addition, all samples showed high transmittance (over 90%) over the entire visible spectrum. Film detectors fabricated by these samples showed high photoresponse and high light/dark current ratio (ILight/IDark) on Ga2O3 deposited at 450°C. Transmission electron microscopy result for film deposited at 450°C showed that the top and bottom regions of films contained both amorphous and crystalline Ga2O3, while there was no crystallization in the middle area of the film, indicating that a combined amorphous-crystalline Ga2O3 film with adequate ratio of crystalline state can significantly enhance the photoresponse while restraining the dark current.

Thin-film transistors (TFTs) based on solution-derived metal oxides hold great potential in emerging low-cost large-area printed electronics. Despite recent impressive progress, these device performances are far behind those of their corresponding vacuum-based counterparts, impeding their future commercialization. In this work, we designed and created high-performance TFTs based on a nanometer-thick (down to 5 nm) crystalline In–Sm–O channel via aqueous solution processing, with a performance comparable to those of existing vacuum-processed metal oxides. The microstructural, chemical, optical, and electrical properties of the ultra-thin In–Sm–O samples as a function of Sm doping content (0–10%) were comprehensively investigated. The In–Sm–O TFTs (5% Sm) on SiO2/Si dielectrics demonstrated state-of-the-art performance, including a high mobility of 21.51 ± 1.33 cm2 V−1 s−1, subthreshold swing of 0.66 ± 0.06 V per decade, threshold voltage of 2.14 ± 0.44 V, on/off current ratio >108, and remarkable bias stress stability. The success of In–Sm–O was attributed to the high quality of the crystalline In2O3 matrix, the ideal nature of Sm dopant in suppressing oxygen vacancies, as well as the ultrathin and atomically smooth nature of the channel layer. Therefore, the aqueous solution-processed ultra-thin In–Sm–O channel is expected to enable the realization of future low-cost, large-area, and high-performance green electronics.

Au/MgZnO/nanolayered ZnO (Ga-doped)/In MIS (metal–insulator–semiconductor) structure UV detectors are fabricated by the PLD (pulsed laser deposition) method, and the effect of different thickness G...

Transparent amorphous oxide semiconductor (TAOS) represented by a-InGaZnO (IGZO) has achieved their commercial success in the display industry due to its superior material properties (e.g. high mobility (>10 cm 2 V −1 s −1 ), good transparency and excellent uniformity). However, TAOSs with excellent electrical properties are all n-type due to the particular electronic structures of oxide materials. The absence of high performance p-type TAOS limits the device application such as complimentary circuit and is now the largest drawback for oxide electronics. Here, we propose a low-temperature solution method to fabricate p-type transparent amorphous nickel oxide (NiO). The influence of processing parameters such as annealing temperature, precursor concentration, source/drain electrode, and dielectric layer is systematically investigated to maximum the NiO device performance. The optimized NiO TFT exhibits outstanding p-channel behavior, including a high hole mobility of 6.0 cm 2 V −1 s −1 , remarkable on/off current modulation ratio of ∼10 7 , and good subthreshold swing of 0.13 V/decade. The high performance NiO device is attributed to the synergistic optimization of annealing temperature, channel thickness, source/drain electrodes, and dielectric materials. The properties of our p-type TAOS are comparable with that of traditional n-type TAOS.

Communicating hydrocephalus (CH) is a common neurological disorder caused by a blockage of cerebrospinal fluid. In this study, we aimed to explore the potential molecular mechanism underlying CH development. Quantitative proteomic analysis was performed to screen the differentially expressed proteins (DEPs) between patients with and without CH. A CH rat model was verified by Hoechst staining, and the co-localization of the target protein and neuron was detected using immunofluorescence staining. Loss-of-function experiments were performed to examine the effect of KLK6 on the synapse structure. A total of 11 DEPs were identified, and kallikrein 6 (KLK6) expression was found to be significantly upregulated in patients with CH compared with that in patients without CH. The CH rat model was successfully constructed, and KLK6 was found to be co-localized with neuronal nuclei in brain tissue. The expression level of KLK6 in the CH group was higher than that in the control group. After interference of KLK6 expression, the expression levels of synapsin-1 and PSD95 in neuronal cells were increased, and the length, number, and structure of synapses were significantly improved. The transcriptome profile (PRJNA719985) after interference of KLK6 expression was obtained, and 5,681 differentially expressed genes (DEGs) were identified. The upregulated DEGs of Appl2, Nav2, and Nrn1 may be involved in the recovery of synaptic structures after interference of KLK6 expression. Collectively, KLK6 participates in the development of CH and might provide a new target for CH treatment.

We report the aqueous-solution-processed Ni-doped In2O3 (NixIn2–xO3, NiInO) thin-film transistors (TFTs) for the first time. The effect of Ni doping on In2O3 microstructure, oxygen defects, and the electron transport properties are investigated by extensive characterization techniques. Analyses indicate that the oxygen vacancies in NiInO are suppressed as the Ni-doping concentration increases, leading to a lower off-state current and a positive shift in threshold voltage. The optimized NiInO TFTs exhibit a high mobility of 17.71 cm2/(V s), on/off current ratio > 106, threshold voltage of 4.21 V, and superior bias stress stability. The success of Ni doping could be attributed to the small ion radius of Ni, large Lewis acid value, and strong Ni–O bond strength. Therefore, the fabricated NiInO TFT provides a bright path for the development of high-performance oxide TFTs.

Perovskite metal oxide (LiNbO3) nanomaterial is explored as a magneto-optic sensor. The electromagnetic interaction is described by magneto-optic modulation associated with vacancy-induced room temperature ferromagnetism. The guiding and propagation through single mode fiber (SMF) is via the excitation of core modes through the material-mediated cavity and further modulated by external magnetic field. The sensitivity and resolution of the sensor are found to be 186 p.m./mT and 0.51 Oe, respectively. The structure with material integrated optical design resulting in a Fabry-Perrot interferometer (FPI), is implemented as an extrinsic sensor, and sensing mechanism is elaborated.

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates grown by hydride vapor phase epitaxy. Detailed material characterization was performed, and the results indicate the superiority of Ge doping in the GaN, which contributed to the SBDs with lower stress, fewer defects and higher quality. Based on the capacitance-voltage and current–voltage measurements performed, SBDs achieved together with a low turn-on voltage Von (0.71–0.74 V), high current Ion/Ioff ratio (3.9 × 107–2.9 × 108), high Schottky barrier height (0.96–0.99 eV), and high breakdown voltage Vb (802 V for a 100 μm diameter). This shows that vertical GaN SBDs on the Ge-doped substrates are promising candidates for high power applications.

Zn1-xCdxO films with different Cd contents obtained by controlling the growth oxygen pressure (Op) were deposited on both c-sapphire (Al2O3) substrates and p-GaN substrates, by means of the pulsed laser deposition (PLD) method. Photoluminescence (PL) measurement revealed that the variation of Op influenced the amount of Cd doping into Zn1-xCdxO films deposited on Al2O3, leading tunable luminescence from the ultraviolet (UV) to blue emission extended to the green band. Then all the fabricated n-Zn1-xCdxO/p-GaN heterojunction possessed good ohmic contacts and exhibited typical rectifying characteristic of the diode. Indeed, the high luminescence from the ZnCdO layer could be attained by inserting a MgO insulator to the heterojunction interface. The fabrication of tunable n-Zn1-xCdxO/p-GaN heterojunction light-emitting diodes is available which was supported by the results of electroluminescence (EL) experiment.

MoS2 based hybrid structures have much attention due to their novel structures and potential applications in diverse areas, such as solar energy conversion, thermoelectric power generation and photo-transistors. In the present work, we have fabricated a novel sandwich structure of MoS2/InSe-nanoparticles (NPs)/MoS2 layers on SiO2/Si substrate by a combination of chemical vapor deposition and physical vapor deposition methods. The morphology of these structures was also studied using scanning electron microscopy. In addition, we have also explored the thermal properties of these hybrid sandwich structures using temperature and power-dependent Raman spectroscopy. For MoS2/InSe-NPs/MoS2 sample, the first-order temperature coefficients of E12g and A1g modes were found to be −0.01722 and −0.01575 cm−1/K, respectively, which are significantly large compared to MoS2 layers without InSe-NPs (i.e. MoS2/MoS2 sample). Further, the thermal conductivity of MoS2/InSe-NPs/MoS2 and MoS2/MoS2 samples on SiO2/Si substrate was extracted as ∼102.3 and ∼81.7 W/m-K, respectively. This work suggests an effective way to form a novel 2D-MoS2 based sandwich structure with semiconductor/metal-NPs; opening up a new scenario to understand the electronic structure of the hybrid structure, and the local strain introduced by NPs. Electron-phonon interactions at an interface can have significant effects on electrical/thermal transport through the optoelectronic devices.

By employing localized surface plasmon resonance (LSPR), the near band edge (NBE) emission intensity of ZnO films were greatly varied, while defect emission remained almost the same. This photoluminescence (PL) intensity enhancement or reduction is tunable by changing the position of Ag nanoparticles (NPs) relative to the ZnO films. The remarkable variation of the NBE emission was investigated deeply. These experimental results reveal that the Ag NPs play a key role in tuning the PL performance of the semiconductor material, where LSPR occurs.

In2Se3 nanostructures have attracted much attention due to their potential applications in diverse areas, such as solar energy conversion, thermoelectric power generation, phase change random access memories, photodetectors, and optoelectronics in the visible region. In the present work, we have fabricated various In2Se3 nanostructures on SiO2/Si substrate using a simple and single-step physical vapor deposition (PVD) method, without using metal seed layer on the substrates. Morphology, structure and phase of the as-grown In2Se3 nanostructures have been carried out using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, respectively. In addition, we have also explored thermal properties of In2Se3 nanostructures on SiO2/Si substrate using temperature and power dependent Raman spectroscopy. Further, the thermal conductivity of nanoparticles, nanospheres, and rod like flowers at room temperature were found to be ∼37.6, ∼39.5, and ∼15.6 W/m-K, respectively. This work suggests an effective way to form various novel nanostructures, opening up a new scenario to understand the vibrational properties and electron-phonon interactions of In2Se3 nanostructures.

Room-temperature-fabricated amorphous Ga2O3 is an inexpensive and highly sensitive material for high-performance solar-blind ultraviolet (UV) (220–280 nm) detectors, which are extremely useful given the widespread use of solar-blind UV photoelectronic technology in multiple areas. The UV detection characteristics of room-temperature deposited amorphous Ga2O3 thin films fabricated by a simple RF magnetron sputtering method were studied, and the deposition Ar pressure of an a-Ga2O3 thin film was varied to determine the mechanism underlying high-performance UV detection and to develop an ideal a-Ga2O3 thin film for UV detection. A high-response amorphous Ga2O3-based UV detector was made at 0.5 Pa, and the maximum response of the device reached 436.3 A W−1 under 240 nm UV light with a 25 V bias voltage, which is near the maximum values for a single-crystal β-Ga2O3 material deposited at a high temperature. An amorphous Ga2O3-based UV detector with a low Idark noise level (4.9 nA at 25 V) and a high Iuv/Idark ratio (107314.4) was made at 1.2 Pa, and the Iuv/Idark ratio of the device was near that of a UV detector based on single-crystal β-Ga2O3 with a complex metal-oxide–semiconductor field-effect transistor (MOSFET) structure. Through a comparative analysis of the electrical characteristics and the gain mechanism within amorphous Ga2O3 thin films deposited at different Ar pressures, the high UV response of the amorphous Ga2O3 detector at 0.5 Pa is found to mainly result from the quasi-Zener tunneling multiplication phenomenon between different resistance components. The low Idark value and the high signal-to-noise ratio of the amorphous Ga2O3-based detector deposited at 1.2 Pa were mainly due to more high-resistance components and a relatively higher tunneling gain in the device. In addition, the amorphous Ga2O3-based detectors showed a much shorter response time (0.08 μs for the device deposited at 0.65 Pa) and recovery time (td1 = 0.21 ms, td2 = 5.88 ms for the device deposited at 1.2 Pa) than the reported crystal semiconductor-based devices and multiple complex structure devices. Thus, the room-temperature-fabricated amorphous Ga2O3 thin film could quickly and effectively detect a faint UV light signal in the presence of a very noisy background, which is extremely important in the applications of UV detectors in wearable, flexible photoelectronic devices.

Background and objectives Vicagrel, a novel thienopyridine antiplatelet agent, is an analogue of clopidogrel in development for the treatment of acute coronary syndromes. This study investigated the pharmacokinetic properties of vicagrel after single oral dosing with a direct comparison with clopidogrel in healthy Chinese subjects in the first two phase I clinical studies. The relationship between the exposure to the active metabolite and the platelet reactivity was also assessed for vicagrel. Methods Study A was a single-ascending-dose study of vicagrel (5–75 mg) compared with clopidogrel (75 mg) in 67 healthy volunteers. Study B was a randomized, two-period, crossover, loading-dose study of vicagrel 20 mg compared with clopidogrel 300 mg in 12 healthy subjects. Plasma concentrations of three common metabolites of vicagrel and clopidogrel, the active thiol metabolite H4, the inactive thiol metabolite H3, and the S-methylated form of H3 (SM3, the major metabolite of vicagrel), were determined using a validated UHPLC–MS/MS method. The relationship between the AUC0−t of active H4 and the P2Y12 reaction units at 4 h after administration of vicagrel was investigated. Blood concentrations of vicagrel were determined after a single oral administration of vicagrel 25 mg to two healthy Chinese subjects. Results In the single-ascending-dose study, vicagrel was metabolized rapidly with the median tmax for the three metabolites, namely, H4, H3, and SM3, ranging from 0.25–1.75 h. The pharmacokinetics of the three metabolites for vicagrel were linear across the dose range of 5–75 mg, with the mean Cmax and AUCs for H4 and H3 increasing in an approximately 1:1 dose-proportional manner and for SM3 increasing in a Conclusions Vicagrel was rapidly and extensively metabolized, and the levels of the parent drug in circulation were very low. The pharmacokinetics of the three metabolites of vicagrel were linear and predictable across the dose range of 5–75 mg. The AUC of active H4 was apparently associated with the P2Y12 reaction units for vicagrel. For active H4, vicagrel 5 mg produced similar exposure (AUC) with more rapid appearance compared with clopidogrel 75 mg, and vicagrel 20 mg produced even slightly higher exposure (AUC) with more rapid appearance compared with clopidogrel 300 mg in humans. Trial Registration: CTR20150346, CTR20160379.

Background Hyperhomocysteinemia is an independent risk factor for dementia, including Alzheimer’s disease. Lowering homocysteine levels with folic acid treatment with or without vitamin B12 has shown few clinical benefits on cognition. Methods To verify the effect of emodin, a naturally active compound from Rheum officinale, on hyperhomocysteinemia-induced dementia, rats were treated with homocysteine injection (HCY, 400 μg/kg/d, 2 weeks) via vena caudalis. Afterwards, HCY rats with cognitive deficits were administered intragastric emodin at different concentrations for 2 weeks: 0 (HCY-E0), 20 (HCY-E20), 40 (HCY-E40), and 80 mg/kg/d (HCY-E80). Results β-Amyloid overproduction, tau hyperphosphorylation, and losses of neuron and synaptic proteins were detected in the hippocampi of HCY-E0 rats with cognitive deficits. HCY-E40 and HCY-E80 rats had better behavioral performance. Although it did not reduce the plasma homocysteine level, emodin (especially 80 mg/kg/d) reduced the levels of β-amyloid and tau phosphorylation, decreased the levels of β-site amyloid precursor protein-cleaving enzyme 1, and improved the activity of protein phosphatase 2A. In the hippocampi of HCY-E40 and HCY-E80 rats, the neuron numbers, levels of synaptic proteins, and phosphorylation of the cAMP responsive element-binding protein at Ser133 were increased. In addition, depressed microglial activation and reduced levels of 5-lipoxygenase, interleukin-6, and tumor necrosis factor α were also observed. Lastly, hyperhomocysteinemia-induced microangiopathic alterations, oxidative stress, and elevated DNA methyltransferases 1 and 3β were rescued by emodin. Conclusions Emodin represents a novel potential candidate agent for hyperhomocysteinemia-induced dementia and Alzheimer’s disease-like features.

We reported the low-temperature high performance IGZO TFTs by solution processing. The influence of IGZO composition over broad range on thin films and devices properties were investigated by a wide range of characterization techniques. The schematic of TFT solution-processed IGZO TFTs mobility with different compositions has been obtained. In order to achieve decent TFT performance, the In content should be much high for solution-processed IGZO TFTs. The optimal solution-processed IGZO TFTs with In:Ga:Zn = 5:1:1 composition exhibited a large mobility of 9.1 cm2 V−1 s−1, low subthreshold swing of 0.22 V/decade, and high on/off ratio of 106 at 300 °C processing temperature.

Objective. Inactivation of NLRP3 inflammasome plays a role in reducing the permeability of endothelial cells and improving blood-brain barrier (BBB) dysfunction following traumatic brain injury (TBI). However, the mechanism controlling NLRP3 inflammasome activation remains unclear. This study is aimed at defining the role of miR-29a-5p in NLRP3 inflammasome activation and permeability of endothelial cells under TBI. Methods. The scratch injury model on brain bEnd.3 microvascular endothelial cells was used as in vitro TBI model cells. Effects of miR-29a mimics and inhibitors on TBI model cells were observed by examining their action on FITC, TEER, and protein contents of ZO-1 and occludin, and cell permeability-associated protein. Luciferase reporter assay evaluated miR-29a-5p targeting to NLRP3. ELISA examined of IL-1β and IL-18 levels. miR-29a-5p mimic was injected into TBI mouse and its effect on BBB, indicated by Evans blue (EB) staining assay and cerebral water content, and NLRP3 activation was examined. Results. miR-29a-3p and miR-29a-5p mimics decrease the concentration of FITC, and increase TEER and the protein contents of ZO-1 and occludin in TBI model cells. miR-29a-5p silencing disrupted the permeability of mouse bEnd.3 cells. miR-29a-5p targets to NLRP3 through the binding on its 3 ′ UTR and negatively regulates its expression in TBI model cells. NLRP3 inhibition and miR-29a-5p silencing together caused significantly decreased FITC concentration and increased TEER value and release of IL-1β and IL-18. miR-29a-5p mimic alleviated the BBB and cerebral water content and inactivates NLRP3 in the mouse TBI model. Conclusions. miR-29a-5p mimics protect TBI-induced increased endothelial cell permeability and BBB dysfunction via suppressing NLRP3 expression and activation.

To further improve the performance of all-inkjet-printing ZnO UV photodetector and maintain the advantages of inkjet printing technology, the inkjet printing Ag nanoparticles (NPs) were deposited on the inkjet printing ZnO UV photodetector for the first time. The inkjet printing Ag NPs can passivate the surface defects of ZnO and work as surface plasmons from the characterization of photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and finite difference time domain method (FDTD) simulation. The normalized detectivity (D*) of the Ag NP-modified detector reaches to 1.45 × 1010 Jones at 0.715 mW incident light power, which is higher than that of 5.72 × 109 Jones of the bare ZnO photodetector. The power-law relationship between the photocurrent and the incident light power of the Ag NP-modified ZnO detector is Ipc ∝ P2.34, which means the photocurrent is highly sensitive to the change of incident light power.

BackgroundWith coronavirus disease 2019 (Covid-19) ravaging the global, concern has been aroused whether discharged Covid-19 patients with reappeared positive nucleic acid test results are infected again.ObjectiveTo analyze the clinical characteristics of discharged Covid-19 patients with reappeared positive nucleic acid test results and to track clinical outcomes of them.MethodsWe extracted clinical data on 938 Covid-19 patients from Wuhan Union Hospital (West Branch), and we obtained information about residual symptoms and nucleic acid tests after discharge through follow-up study. We evaluated the relationship of clinical characteristics and reappeared positive results. Each patient had at least 44 days of follow-up.ResultsOf 938 discharged patients, a total of 58 (6.2%) had reappeared positive nucleic acid test results and 880 remain negative. Among patients over the age of 50, the factors we found to be associated with re-positive results were coronary artery disease (14.1%, vs. 5.5% among those without coronary artery disease; odds ratio, 2.81; 95% confidence interval [CI], 1.28 to 6.15), and hypertension (9.5%, vs. 4.9% among those without hypertension; odds ratio, 2.05; 95% CI, 1.10 to 3.82). As of May 11, 2020, 54 (93.1%) re-positive patients turned negative again while two patients remained positive, and two patients was lost to the second follow-up.ConclusionCoexisting diseases including coronary artery disease and hypertension were substantial risk factors for re-positive outcomes among patients over 50. And most re-positive patients tended to return negative eventually.

Alzheimer’s disease (AD) is a multifactorial neurodegenerative disease for which there are limited therapeutic strategies. Protein phosphatase 2A (PP2A) activity is decreased in AD brains, which promotes the hyperphosphorylation of Tau and APP, thus participate in the formation of neurofibrillary tangles (NFTs) and β-amyloid (Aβ) overproduction. In this study, the effect of synthetic tricyclic sulfonamide PP2A activators (aka SMAPs) on reducing AD-like pathogenesis was evaluated in AD cell models and AD-like hyperhomocysteinemia (HHcy) rat models. SMAPs effectively increased PP2A activity, and decreased tau phosphorylation and Aβ(40/42) levels in AD cell models. In HHcy-AD rat models, cognitive impairments induced by HHcy were rescued by SMAP administration. HHcy-induced tau hyperphosphorylation and Aβ overproduction were ameliorated through increasing PP2A activity on compound treatment. Importantly, SMAP therapy also prevented neuronal cell spine loss and neuronal synapse impairment in the hippocampus of HHcy-AD rats. In summary, our data reveal that pharmacological PP2A reactivation may be a novel therapeutic strategy for AD treatment, and that the tricyclic sulfonamides constitute a novel candidate class of AD therapeutic. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1007/s13311-020-00841-6) contains supplementary material, which is available to authorized users.

Neurotoxicity is one of the major pathological changes in multiple neurological disorders, including Alzheimer's disease (AD) and Parkinson's disease (PD), the second popular neurodegenerative disease in aged people. It is known that the AD and PD share the similar neuropathological hallmarks, such as the oxidative stress, loss of specific neurons, and aggregation of specific proteins. However, there are no effective therapeutic drugs for both AD and PD yet. Oxytocin (OXT) is a small peptide with 9 amino acids that is neuroprotective to many neurological disorders. Whether OXT administration confers neuroprotection to 1-methyl-4-phenyl-1, 2, 3, 6- tetrahydropyridine (MPTP)-induced neurotoxicity in mice are still not known. In this study, we first found that the OXT levels are decreased in MPTP mice. Supplementation with OXT effectively rescues the locomotor disabilities and anxiety-like behaviors in MPTP mice. OXT also alleviates the hyperphosphorylation of α-synuclein at S129 site and the loss of dopaminergic neurons in the substantia nigra pars compacta, as well as the oxidative stress in the MPTP mice, and alleviates both oxidative stress and cell cytotoxicity in vitro. Furthermore, we found that OXT could inhibit the miR-26a/DAPK1 signal pathway in MPTP mice. In summary, our study demonstrates protective effects of OXT in MPTP mice and that miR-26a/DAPK1 signaling pathway may play an important role in mediating the protection of OXT.

SUMMARY Protein phosphatase 2A (PP2A) inhibition causes hy-perphosphorylation of tau and APP in Alzheimer’s disease (AD). However, the mechanisms underlying the downregulation of PP2A activity in AD brain remain unclear. We demonstrate that Cancerous Inhibitor of PP2A (CIP2A), an endogenous PP2A inhibitor, is overexpressed in AD brain. CIP2A-mediated PP2A inhibition drives tau/APP hyperphosphorylation and increases APP β-cleavage and Aβ production. Increase in CIP2A expression also leads to tau mislocalization to dendrites and spines and synaptic degeneration. In mice, injection of AAV-CIP2A to hippocampus induced AD-like cognitive deficits and impairments in long-term potentiation (LTP) and exacerbated AD pathologies in neurons. Indicative of disease exacerbating the feedback loop, we found that increased CIP2A expression and PP2A inhibition in AD brains result from increased Aβ production. In summary, we show that CIP2A overexpression causes PP2A inhibition and AD-related cellular pathology and cognitive deficits, pointing to CIP2A as a potential target for AD therapy., In Brief PP2A inactivation plays a key role in AD pathogenesis. Shentu et al. report that endogenous PP2A inhibitor CIP2A is upregulated in AD brains. CIP2A overexpression promotes β-cleavage of APP and tau hyperphosphorylation through PP2A inhibition, leading to impairments in synapse, hippocampal LTP, and memory., Graphical Abstract

Alzheimer's disease (AD) underlies dementia for millions of people worldwide with no effective treatment. The dementia of AD is thought stem from the impairments of the synapses because of their critical roles in cognition. Melatonin is a neurohormone mainly released by the pineal gland in a circadian manner and it regulates brain functions in various manners. It is reported that both the melatonin deficit and synaptic impairments are present in the very early stage of AD and strongly contribute to the progress of AD. In the mammalian brains, the effects of melatonin are mainly relayed by two of its receptors, melatonin receptor type 1a (MT1) and 1b (MT2). To have a clear idea on the roles of melatonin in synaptic impairments of AD, this review discussed the actions of melatonin and its receptors in the stabilization of synapses, modulation of long-term potentiation, as well as their contributions in the transmissions of glutamatergic, GABAergic and dopaminergic synapses, which are the three main types of synapses relevant to the synaptic strength. The synaptic protective roles of melatonin in AD treatment were also summarized. Regarding its protective roles against amyloid-β neurotoxicity, tau hyperphosphorylation, oxygenation, inflammation as well as synaptic dysfunctions, melatonin may be an ideal therapeutic agent against AD at early stage.

High quality (200) and (111) orientations cubic MgZnO thin films were made on (200) and (111) orientations MgO substrates separately under different condition with higher and lower migration energy of reactive atoms separately. The crystal quality of (111) orientation MgZnO thin film is higher than (200) one because of the stronger horizontal migration of atoms on (111) surface under high temperature condition, the surface of (200) orientation MgZnO thin film is smoother than (111) orientation one because of lower vertical growth speed of (200) MgZnO grains. The band gap of (111) orientation MgZnO thin film is smaller than (200) one because of more Zn atoms in (111) orientation MgZnO lattice than that in (200) ones. This paper gives an effective method to improve crystal quality of different orientation MgZnO thin film under different condition, which is meaningful in application of cubic MgZnO in different areas.

ZnO:Al (AZO) and a-Ga2O3 thin films were successively deposited on a sapphire substrate by magnetron sputtering and the photoelectric properties of AZO/a-Ga2O3 heterojunction vertical structure to solar blind ultraviolet light were investigated. The device shows a high photo-to-dark current ratio (2.2 × 103), low dark current (11.4 nA), large responsivity (67.26 A/W) and fast response and recovery times of 1.53 μs and 2.25 ms under 254 nm light illumination at 10 V. Additionally, the device exhibits an obvious self-powered effect with light-dark current ratio (183.3) and the responsivity (2.92 × 10−2 A/W) at 0 V. The high response is attributed to the separation of photogenerated electron-hole pairs due to built-in field in the depletion width of AZO and Ga2O3. The analysis shows that there exists a quasi-Zener tunneling internal gain mechanism, which increases the performance of the device. The comprehensive performance of the device implied a wide potential in optoelectronics applications.

The disadvantages of the low on/off current ratio (Ion/off) and high leakage current in ZnO-based thin-film transistors (TFTs) impede its development to realize industrial production for replacing Si-TFTs. In this work, we fabricated a high performance MgZnO/ZnO dual-active-layer TFTs (DAL-TFTs) through systematic optimize the synthesis conditions. The optimized Mg0.2Zn0.8O/ZnO TFTs presents high mobility of 21.1 cm2V−1s−1 with a high Ion/off of 1.5 × 108, which is much higher than that of ZnO-based TFTs. The results indicate that high carrier concentration ZnO close to the insulation layer ensures the excellent mobility of MgZnO/ZnO DAL-TFTs and low carrier concentration MgZnO layer can reduce the off-state current of the device, and increase the switching ratio of the device. Our results indicate the MgZnO/ZnO composite is a promising candidate for high performance TFTs and other electronic devices.

Functional failure of tau contributes to age-dependent, iron-mediated neurotoxicity, and as iron accumulates in ischemic stroke tissue, we hypothesized that tau failure may exaggerate ischemia-reperfusion-related toxicity. Indeed, unilateral, transient middle cerebral artery occlusion (MCAO) suppressed hemispheric tau and increased iron levels in young (3-month-old) mice and rats. Wild-type mice were protected by iron-targeted interventions: ceruloplasmin and amyloid precursor protein ectodomain, as well as ferroptosis inhibitors. At this age, tau-knockout mice did not express elevated brain iron and were protected against hemispheric reperfusion injury following MCAO, indicating that tau suppression may prevent ferroptosis. However, the accelerated age-dependent brain iron accumulation that occurs in tau-knockout mice at 12 months of age negated the protective benefit of tau suppression against MCAO-induced focal cerebral ischemia-reperfusion injury. The protective benefit of tau knockout was revived in older mice by iron-targeting interventions. These findings introduce tau-iron interaction as a pleiotropic modulator of ferroptosis and ischemic stroke outcome.

Yifan Zhang,1 Xiaoyan Chen,1 Yunbiao Tang,2 Youming Lu,1 Lixia Guo,1 Dafang Zhong1 1State Key Laboratory of Drug Research, Shanghai Institute of Materia Medica, Chinese Academy of Sciences, Shanghai, 2Department of Pharmacy, The General Hospital of Shenyang Military Region, Shenyang, People’s Republic of China Purpose: The aim of this study was to evaluate the bioequivalence of a generic product 70 mg alendronate sodium tablets with the reference product Fosamax® 70mg tablet. Materials and methods: A single-center, open-label, randomized, three-period, three-sequence, reference-replicated crossover study was performed in 36 healthy Chinese male volunteers under fasting conditions. In each study period, the volunteers received a single oral dose of the generic or reference product (70mg). Blood samples were collected at pre-dose and up to 8h after administration. The bioequivalence of the generic product to the reference product was assessed using the US Food and Drug Administration (FDA) and European Medicines Agency (EMA) reference-scaled average bioequivalence (RSABE) methods. Results: The average maximum concentrations (Cmax) of alendronic acid were 64.78±43.76, 56.62±31.95, and 60.15±37.12 ng/mL after the single dose of the generic product and the first and second doses of the reference product, respectively. The areas under the plasma concentration–time curves from time 0 to the last timepoint (AUC0–t) were 150.36±82.90, 148.15±85.97, and 167.11±110.87h·ng/mL, respectively. Reference scaling was used because the within-subject standard deviations of the reference product (sWR) for Cmax and AUC0–t were all higher than the cutoff value of 0.294. The 95% upper confidence bounds were-0.16 and-0.17 for Cmax and AUC0–t, respectively, and the point estimates for the generic/reference product ratio were 1.08 and 1.00, which satisfied the RSABE acceptance criteria of the FDA. The 90% CIs for Cmax and AUC0–t were 90.35%–129.04% and 85.31%–117.15%, respectively, which were within the limits of the EMA for the bioequivalence of 69.84%–143.19% and 80.00%–125.00%. Conclusion: The generic product was bioequivalent to the reference product in terms of the rate and extent of alendronate absorption after a single 70 mg oral dose under fasting conditions. Keywords: alendronate sodium, pharmacokinetics, highly variable drug, reference-scaled average bioequivalence

MSM structure UV detectors were fabricated on mixed-phase MgZnO thin films with (200) cubic MgZnO/hexagonal MgZnO and (111) cubic MgZnO/hexagonal MgZnO interfaces by PLD method. Under 25 V bias voltage, the maximum responsivity of the mix-phase MgZnO based detector with (002) cubic MgZnO/hexagonal MgZnO interfaces reached 8 A/W at 256 nm because of 3809% internal gain of the detector at solar-blind UV light, which is two order of magnitude bigger than the detector with (111) cubic MgZnO/hexagonal MgZnO interfaces. The higher density of interface states between (200) cubic and hexagonal MgZnO grains in the mix-phase MgZnO thin film is main reason for its big internal gain and high solar-blind UV response. The Idark of the mixed-phase MgZnO based detector with (111) cubic MgZnO/hexagonal MgZnO interfaces is much smaller and the Ilight/Idark of which is higher because of the higher interfaces barrier at (111) cubic MgZnO/hexagonal MgZnO interfaces, so the detector could effectively detect faint solar-blind UV signal more under strong noise background.

We demonstrate the direct formation of c-axis oriented crystalline IGZO thin films at room temperature by magnetron sputtering. The influence of processing parameters such as oxygen partial pressure, post-annealing temperature and channel thickness on the electrical performance of IGZO films and thin-film transistors (TFTs) was intensively investigated. The as-deposited crystalline IGZO TFTs exhibited a mobility of 4.49 cm2 V−1 s−1 and an on/off ratio of 2.08 × 107. For the annealed device, a high mobility of 10.51 cm2 V−1 s−1, a subthreshold swing of 0.672 V decade−1, a threshold voltage of 0.38 V, as well as an on/off current ratio of ∼108 are achieved with an annealing temperature of 400 °C. These results present a significant step towards the development of high-performance TFTs using oriented crystalline IGZO.

Alzheimer’s disease (AD) is characterized by chronic progressive cognitive deterioration frequently accompanied by psychopathological symptoms, including changes in personality and social isolation, which severely reduce quality of life. Currently, no viable therapies or present-day drugs developed for the treatment of AD symptoms are able to slow or reverse AD progression or prevent the advance of neurodegeneration. As such, non-drug alternatives are currently being tested, including deep brain stimulation (DBS). DBS is an established therapy for several neurological and psychiatric indications, such as movement disorders. Studies assessing DBS for other disorders have also found improvements in cognitive function, providing the impetus for clinical trials on DBS for AD. Targets of DBS in AD clinical trials and animal model studies include the fornix, entorhinal cortex (EC), nucleus basalis of Meynert (NBM), and vertical limb of diagonal band (VDB). However, there is still no comprehensive theory explaining the effects of DBS on AD symptoms or a consensus on which targets provide optimal benefits. This article reviews the anatomy of memory circuits related to AD, as well as studies on DBS rescue of AD in these circuits and the possible therapeutic mechanisms.

We report the fabrication of gallium oxide (GaOx) thin films by a novel polymer-assisted deposition (PAD) method. The influence and mechanism of postannealing temperature (200-800 °C) on the formation and properties of GaOx thin films are investigated by complementary characterization analyses. The results indicate that solution-deposited GaOx experiences the elimination of organic residuals as well as the transformation of amorphous GaOx to crystalline GaOx with the increase in annealing temperature. High-quality GaOx could be achieved with a smooth surface, wide band gap, and decent dielectric performance. Moreover, the solution-processed In2O3 thin-film transistors based on optimized GaOx dielectrics demonstrate outstanding electrical performance, including a low operating voltage of 5 V, a mobility of 3.09 cm2 V-1 s-1, an on/off current ratio of 1.8 × 105, and a subthreshold swing of 0.18 V dec-1. Our study suggests that GaOx achieved by PAD shows great potential for further low-cost and high-performance optoelectronic applications.

Ischemic stroke, which accounts for 87% of all strokes, constitutes the leading cause of morbidity and mortality in China. Although the genetics and epigenetics of stroke have been extensively investigated, few studies have examined their relationships at different stages of stroke. This study assessed the characteristics of transcriptome changes at different stages of ischemic stroke using a mouse model of transient middle cerebral artery occlusion (tMCAO) and bioinformatics analyses. Cerebral cortex tissues from tMCAO mice at days 1, 3, 7, 14, and 28 were removed for RNA-Seq and small RNA-Seq library construction, sequencing, and bioinformatics analysis. We identified differentially expressed (DE) genes and miRNAs and revealed an association of the up-regulated or down-regulated DEmiRNAs with the correspondingly altered DEgene targets at each time point. In addition, different biological pathways were activated at different time points; thus, three groups of miRNAs were verified that may represent potential clinical biomarkers corresponding to days 1, 3, and 7 after ischemic stroke. Notably, this represents the first functional association of some of these miRNAs with stroke, e.g., miR-2137, miR-874-5p, and miR-5099. Together, our findings lay the foundation for the transition from a single-point, single-drug stroke treatment approach to multiple-time-point multi-drug combination therapies.

High-performance ultraviolet (UV) detectors with both high responses and fast speeds are hard to make on homogeneous crystal semiconductor materials. Here, the UV response characteristics of mixed-phase MgZnO thin films with different internal structure distributions are studied. The mixed-phase MgZnO-based detector with the given crystal composition has a high response at both deep UV light (96 A W−1 at 240 nm) and near UV light (80 A W−1 at 335 nm). Meanwhile, because of the quasi-tunneling breakdown mechanism within the device, the high-response UV detector also shows a fast response speed (tr = 0.11 μs) and recovery speed (td1 = 26 μs) at deep UV light, which is much faster than both low-response mixed-phase MgZnO-based UV detectors with other structure constitutions and reported high-response UV devices on homogenous crystal materials. The Idark of the device is just 4.27 pA under a 5 V bias voltage, so the signal-to-noise ratio of the device reached 23852 at 5.5 uW cm−2 235 nm UV light. The new quasi-tunneling breakdown mechanism is observed in some mixed-phase MgZnO thin films that contain both c-MgZnO and h-MgZnO parts, which introduce a high response, signal-to-noise ratio, and fast speed into mixed-phase MgZnO-based UV detectors at weak deep UV light.

We prepared ZnO:H thin films in Ar + H2 atmosphere with substrate at room temperature by magnetron sputtering, the effect of H2 flow ratio on the properties of thin films and the performance of ZnO:H thin-film transistors (ZnO:H-TFTs) were investigated. Hydrogen could act as a defect passivator and a shallow donor in ZnO films, which not only increases the carrier concentration but also reduces the interface trap density, therefore improving the TFT performance. Compared with pristine ZnO-TFT, the optimal ZnO:H-TFT exhibits great enhancement, with the saturation mobility increasing from 2.17 cm2/V⋅s to 5.17 cm2/V⋅s, the on/off ratio increasing from 3.47 × 105 to 4.98 × 106, the threshold voltage reducing from 15.12 V to 6.03 V. Meanwhile, the positive and negative bias stability is also improved from ΔVth = 3.89 V and −6.35 V to 1.74 V and −3.72 V, respectively. Our results show that introducing hydrogen into the sputtering atmosphere to achieve hydrogen doping is a simple and effective method to improve the performance of ZnO-TFTs. Furthermore, the high-performance ZnO:H-TFTs fabricated at room temperature have great potential in the field of flexible electronics.

Stroke activates microglia pro-inflammatory response that not only induces the early neuronal injuries but also causes the secondary brain infarction. Yet, the underlying mechanisms for how microglia become activated in stroke are still unknown. Here, using the next-generation of RNA sequencing we find a total of 778 genes increasingly expressed in brain of stroke mice. Of these, we identified Hmgb2 as a microglia pro-inflammatory mediator by promoting the transcription of Ctss. Inhibition of either Hmgb2 or Ctss blocks microglia pro-inflammatory response and protects against brain damages and improves the neurological functions of stroke mice. This study uncovers Hmgb2 and Ctss as the major microglia inflammatory response mediators in stroke and hence warrants the promising targets for stroke therapies.

In this work, we report parts per billion (ppb) NO2 gas detection by utilizing zinc oxide/reduced graphene oxide (ZnO/rGO) heterostructure through a chemiresistive approach. The sensing material is carefully investigated through numerous characterization techniques. The experimental results indicated that the designed sensor shown good linearity in low ppb range of nitrogen dioxide (NO2) gas. The sensor exhibited very high response of 33.11 at 2.5 ppm in 182 s with obtained detection limit down to ppb at relatively low optimal operating temperature of 110 °C. The remarkable performance of ZnO/rGO heterostructure towards NO2 and negligible cross-response to other interfering gases along with high repeatability and long-term stability of the sensor is investigated. Due to many reactive sites and high transport capability of rGO along with high gas adsorption of ZnO nanospheres which attributes to the favorable charge transfer at ZnO/rGO interface under exposure of NO2 gas which leads to modulate the energy band structure. This study shows that the simple, cost-effective synthesis method along with easy-fabricated and deployable sensor can be applied in many industrial and environmental applications.

The electro-optic effect in two-dimensional (2D) MgO nanoflakes synthesized by a microwave-assisted process is demonstrated using a designed optical fiber modulator. The guiding properties of intense core modes excited by the material cavity are modulated by the external electric field. The feasibility of 2D MgO nanoflakes as an effective electro-optic modulator and switching are experimentally verified for the first time, to the best of our knowledge. The proposed optical-fiber-based electro-optic modulator achieves a linear wavelength shift with a high sensitivity of 12.87 pm/V(77.22 nm/kV/mm, in the electric field). The results show that MgO, as a metal oxide 2D material, is a very promising material for electro-optic modulators and switching.

Volatile organic compounds (VOCs) monitoring is a vital need for many industrial and environmental air quality monitoring applications. We proposed and demonstrated a dual-cavity Fabry-Perot interferometric (DFPI) sensors fabricated by using a polarization maintaining fiber (PMF) immobilized with graphene, PMMA and graphene/PMMA composite for detection of various volatile gases. The optical properties of these materials changes when exposed to different VOCs, which proportionally leads to wavelength and power shift in an interference spectrum due to effective change in refractive index of graphene and swelling of PMMA, respectively. The experimental results are best fitted with models based on Langmuir adsorption isotherm and Hansen solubility parameters. This study focuses on insight into the physical/chemical interaction of volatile gases with versatile sensing materials along with new optical fiber configuration approach, which could be explored for remote detection and air quality monitoring.

Strain regulation as an effective way to enhance the photoelectric properties of two-dimensional (2D) transition metal dichalcogenides has been widely employed to improve the performance of photovoltaic devices. In this work, tensile strain was introduced in multilayer MoS 2 grown on GaN by depositing 3 nm of Al 2 O 3 on the surface. The temperature-dependent Raman spectrum shows that the thermal stability of MoS 2 is improved by Al 2 O 3 . Theoretical simulations confirmed the existence of tensile strain on MoS 2 covered with Al 2 O 3 , and the bandgap and electron effective mass of six layers of MoS 2 decreased due to tensile strain, which resulted in an increase of electron mobility. Due to the tensile strain effect, the photodetector with the Al 2 O 3 stress liner achieved better performance under the illumination of 365 nm wavelength, including a higher responsivity of 24.6 A/W, photoconductive gain of 520, and external quantum efficiency of 8381%, which are more than twice the corresponding values of photodetectors without Al 2 O 3 . Our work provides an effective technical way for improving the performance of 2D material photodetectors.