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A wireless inductive coupling ThruChip Interface (TCI) is a flexible system-in-package (SiP) technique which enables to build a powerful interconnection network between stacked chips. For easy use of TCI, we have developed intellectual properties (IPs), and proposed an interconnection network which can make the use of IPs. We also developed a real chip embedded the IP, and evaluated the performance. By stacking multiple chips with the proposed IP, an inter-chip network with link-to-link flow control by piggyback control is established. The new proposed escalator network which uses piggyback of the credit packets outperforms the ring network used in the first prototype by 28%-59% in terms of throughput. The performance overhead by the piggyback control was less than 3%-4% of that without control messages.

VPCMA (Variable Pipelined Cool Mega Array) is a low power CGRA (Coarse-Grained Reconfigurable Architecture) which we previously proposed in [1]. CC-SOTB2 is a real chip implementation of the VPCMA using Renesas 65-nm SOTB technology [2]. In this demonstration, we will show the power consumption of the CC-SOTB2 while performing a real image processing.

A wireless inductive coupling ThruChip Interface (TCI) is a flexible system-in-package (SiP) technique which enables to build a powerful interconnection network between stacked chips. For easy use of TCI, intellectual properties (IPs) are developed, and interconnection networks which can make the use of IPs are proposed and evaluated based on the real chip implementation. The new proposed elevator network which uses piggyback of the credit packets outperforms the ring network used in the first prototype by 28%-59% in terms of throughput. The performance overhead by the piggyback control is less than 3%-4%.

We synthesized amorphous films composed of transition-metal-encapsulating Si clusters (MSin: M=Mo or Nb) by deposition of hydrogenated MSinHx clusters onto silica substrates followed by annealing at 500 ?C for dehydrogenation. The MoSin (n=7?16) cluster films are semiconductors with an optical gap >0.6 eV and resistivity >1 ? cm. In particular, the MoSi12 cluster film has a large gap of 1.1 eV and resistivity of 120 ? cm with high hole mobility of 32 cm2/(V s). In these films, Si atoms form amorphous networks similar to those in hydrogenated amorphous Si but the electronic disorder is reduced by the use of MSin clusters as the building blocks.