1. Large-scale growth of few-layer two-dimensional black phosphorus
- Author
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Zehan Wu, Shu Ping Lau, Yi Zhang, Xianhui Chen, Beining Zheng, Yongxin Lyu, Ran Ding, Zhibin Yang, and Jianhua Hao
- Subjects
Electron mobility ,Materials science ,Silicon ,Band gap ,chemistry.chemical_element ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,law.invention ,Pulsed laser deposition ,law ,General Materials Science ,Laser ablation ,business.industry ,Mechanical Engineering ,Transistor ,Transistor array ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,0104 chemical sciences ,Semiconductor ,chemistry ,Mechanics of Materials ,Optoelectronics ,0210 nano-technology ,business - Abstract
Two-dimensional materials provide opportunities for developing semiconductor applications at atomistic thickness to break the limits of silicon technology. Black phosphorus (BP), as a layered semiconductor with controllable bandgap and high carrier mobility, is one of the most promising candidates for transistor devices at atomistic thickness1–4. However, the lack of large-scale growth greatly hinders its development in devices. Here, we report the growth of ultrathin BP on the centimetre scale through pulsed laser deposition. The unique plasma-activated region induced by laser ablation provides highly desirable conditions for BP cluster formation and transportation5,6, facilitating growth. Furthermore, we fabricated large-scale field-effect transistor arrays on BP films, yielding appealing hole mobility of up to 213 and 617 cm2 V−1 s−1 at 295 and 250 K, respectively. Our results pave the way for further developing BP-based wafer-scale devices with potential applications in the information industry. Centimetre-scale growth of few-layer black phosphorous with high crystalline quality and homogeneity is realized by pulsed laser deposition.
- Published
- 2021
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