1. Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT
- Author
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Munetoshi Fukui, Masanori Tsukuda, Toshiro Hiramoto, Kiyoshi Takeuchi, Kazuo Itou, Takuya Saraya, Toshihiko Takakura, Shinichi Suzuki, Masaki Sudo, Tamotsu Ninomiya, Ichiro Omura, Seiya Abe, and Kazunori Hasegawa
- Subjects
010302 applied physics ,Materials science ,gate shielding layer ,business.industry ,020208 electrical & electronic engineering ,scaled IGBT ,Biasing ,02 engineering and technology ,Insulated-gate bipolar transistor ,Hardware_PERFORMANCEANDRELIABILITY ,Gate voltage ,01 natural sciences ,self-turn-on ,0103 physical sciences ,Turn (geometry) ,0202 electrical engineering, electronic engineering, information engineering ,Hardware_INTEGRATEDCIRCUITS ,Optoelectronics ,business ,Hardware_LOGICDESIGN - Abstract
Negative biasing of the gate voltage in a scaled insulated gate bipolar transistor (IGBT) during the off-state was modeled and found to be effective against self-turn-on failures. The required self-turn-on-free criteria were verified experimentally., 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2019), 19-23 May 2019, Shanghai, China
- Published
- 2019