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Highlights: [•] ZnO nanostructures have been grown by rf magnetron sputter deposition. [•] A morphologically superior and coalescence free ZnO nanowires have been realized. [•] Argon pressure significantly alters the morphology of ZnO nanostructures. [•] ZnO nanostructures exhibit hexagonal wurtzite crystal structure. [•] A dominant D0X emission indicates the high optical quality of the nanostructures. [Copyright &y& Elsevier]

Abstract: A facile method for the synthesis of gallium nitride (GaN) and indium gallium nitride (InGaN) nanoparticles (NPs) has been reported by simple chemical co-precipitation method. The average diameters of the GaN and InGaN NPs were 12nm and 38nm respectively. GaN NPs show high crystalline quality with hexagonal structure while InGaN NPs exhibits some cubic inclusion by X-ray diffraction. Room-temperature photoluminescence analysis shows the near-band edge emission at 3.43eV for GaN and a strong blue emission at 3.0eV for In0.4Ga0.6N NPs. The E2 H phonon peaks from micro-Raman scattering at 567cm−1 for GaN and 564cm−1 for InGaN confirms the wurtzite nature of both the NPs. In addition, we have also assigned some other phonon modes of GaN associated with zone boundary K point of the Brillouin zone which is not experimentally observed for their bulk counterparts. [Copyright &y& Elsevier]