1. Rugged surface poly-Si electrode and low temperature deposited Si/sub 3/N/sub 4/ for 64 Mbit and beyond STC DRAM cell
- Author
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J. Miyano, A. Sakamoto, N. Inoue, M. Ino, H. Tamura, M. Yoshimaru, and S. You
- Subjects
Materials science ,Silicon ,business.industry ,chemistry.chemical_element ,Dielectric ,Dielectric thin films ,Capacitance ,law.invention ,Capacitor ,chemistry ,law ,Electrode ,Electronic engineering ,Optoelectronics ,business ,Oxidation resistance ,Dram - Abstract
Describes the novel technologies of poly-Si and Si/sub 3/N/sub 4/ film which are used for the storage capacitor electrode and also dielectric film of a DRAM STC (stacked capacitor cell), respectively. Poly-Si film deposited at about 570 degrees C has a rugged surface. It is found that 0.1 mu m poly-Si film deposited at 570 degrees C has a 2.5-times-larger surface area than film deposited at 620 degrees C. It is also found that Si/sub 3/N/sub 4/ film deposited at 600 degrees C has a higher oxidation resistance than film deposited at 750 degrees C. By the use of the rugged surface poly-Si film and the 6.3 nm SiO/sub 2/-equivalent-thick Si/sub 3/N/sub 4/ film, an STC which has a storage capacitance equal to that of the conventional STC cell with 2.5 nm SiO/sub 2/-equivalent-thick dielectric film can be realized. >
- Published
- 2002
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