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Pt or Arsenic (As)-doped polycrystalline-silicon (poly-Si) gate/HfO2 or HfO2-Al2O3/p-type Si metal oxide semiconductor (MOS) capacitors were fabricated using an atomic-layer-deposition technique, and their compatibility with poly-Si gate was investigated using a comparison with the Pt gate. The HfO2-Al2O3 stack film was found to have better As diffusion-blocking properties as a result of the rather thick amorphous interlace layer including Al2O2 than that of the HfO2 film. N+ duped poly-Si gate/HfO2-Al2O3 MOS capacitors had a lower current density of - 1.1 × 10-9 A/cm² at - 1 V resulting in a small hysteresis voltage due to the lower As penetration and thick amophous interface layer. These results suggest that N+ doped poly-Si gate/HfO2-Al2O3, MOS capacitors are compatible with the poly-Si gate, which is also comparable to the Pt gate. [ABSTRACT FROM AUTHOR]

This study investigated the variations in the dielectric constant with film thickness and measurement temperature of (Ba0.48Sr0.52)TiO3 thin-film capacitors with thicknesses ranging from 65 to 273 nm. The films were prepared by an on-axis rf magnetron sputtering, having Pt top and bottom electrodes. The thicker film showed a higher dielectric constant with a larger temperature dependence of the dielectric constant, and the maximum dielectric constant was observed at a higher temperature. The thickness-dependent dielectric constant at a given measurement temperature was explained by using the previously reported interfacial capacitance model, containing the intrinsic dead layer and electrode polarization. The temperature-dependent dielectric property could be explained using a modified Curie-Weiss (C-W) behavior of the film taking the nonferroelectric interfacial capacitance components into consideration. However, the C-W constant and Curie temperature of the ferroelectric layer must be modified in order to obtain a reasonable interfacial layer thickness. [ABSTRACT FROM AUTHOR]