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A high-performance quasi-Z-source inverter (qZSI) is presented in this study. The proposed circuit has the four advantages: (i) reduction in voltage stress across the Z-network capacitor, (ii) voltage source and inverter bridge share the same ground point, (iii) reduced inrush current during start-up, (iv) wide range of load operation even with a small inductance in the Z-network. The proposed qZSI can be controlled as the traditional ZSI. This study analyses the operation principle of the proposed circuit and carries out its parameter design. Finally, experimental results are presented to validate the operation of the proposed qZSI. [ABSTRACT FROM AUTHOR]

This paper presents the study on the potential distribution of the ac 1000-kV ultra-high voltage metal-oxide arrester (MOA). Based on the idea of field-circuit combination, the 3-D finite-element method (FEM) and circuit-analytic method are applied to analyze and improve the potential distribution of the 1000-kV MOA. The 3-D FEM is used to obtain the 1000-kV MOA's potential distribution and stray capacitances to build the equivalent circuit of the MOA. With the equivalent circuit, the method to improve the potential distribution of the MOA by adding parallel capacitors is analyzed. A scheme to obtain the recommended values of parallel capacitors is achieved to improve the potential distribution coefficient within ±5%. In addition, the influences of the grading ring and mounting height of the MOA on the potential distribution are also discussed. The potential distribution of the developed 1000-kV surge arrester was tested by the photoelectricity measurement method, which is close to the analysis results. [ABSTRACT FROM AUTHOR]

This paper reports a novel analytic model of this multichannel spark discharge, considering the delay time in the breakdown process, the electric transforming of the discharge channel from a capacitor to a resistor induced by the air breakdown, and the varying plasma resistance in the discharge process. The good agreement between the experimental and the simulated results validated the accuracy of this model. Based on this model, the influence of the circuit parameters on the maximum discharge channel number (MDCN) is investigated. Both the input voltage amplitude and the breakdown voltage threshold of each discharge channel play a critical role. With the increase of the input voltage and the decrease of the breakdown voltage, the MCDN increases almost linearly. With the increase of the discharge capacitance, the MDCN first rises and then remains almost constant. With the increase of the circuit inductance, the MDCN increases slowly but decreases quickly when the inductance increases over a certain value. There is an optimal value of the capacitor connected to the discharge channel corresponding to the MDCN. Finally, based on these results, to shorten the discharge time, a modified multichannel discharge circuit is developed and validated by the experiment. With only 6-kV input voltage, 31-channels discharge is achieved. The breakdown voltage of each electrode gap is larger than 3 kV. The modified discharge circuit is certain to be widely used in the PSJA flow control field. [ABSTRACT FROM AUTHOR]

An analysis model of the dV/dt capability for a metal—oxide—semiconductor (MOS) controlled thyristor (MCT) is developed. It is shown that, in addition to the P-well resistance reported previously, the existence of the OFF-FET channel resistance in the MCT may degrade the dV/dt capability. Lower P-well and N-well dosages in the MCT are useful in getting a lower threshold voltage of OFF-FET and then a higher dV/dt immunity. However, both dosages are restricted by the requirements for the blocking property and the forward conduction capability. Thus, a double variable lateral doping (DVLD) technique is proposed to realize a high dV/dt immunity without any sacrifice in other properties. The accuracy of the developed model is verified by comparing the obtained results with those from simulations. In addition, this DVLD MCT features mask-saving compared with the conventional MCT fabrication process. The excellent device performance, coupled with the simple fabrication, makes the proposed DVLP MCT a promising candidate for capacitor discharge applications. [ABSTRACT FROM AUTHOR]