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Single layer structure is an ideal way to realize the low cost solution processed organic light-emitting diodes (OLEDs). Efficient electroluminescent material with hole and electron transport characters as well as suitable triplet energy levels is highly desired to realize single layer OLEDs with good performance. In this work, a bipolar compound with carbazole as electron donor and 4,5-diphenylimidazoleas as electron acceptor has been successfully synthesized and applied as emitting layer for both non-doped and doped single layer OLEDs fabricated by solution processing. A pure blue emission achieved in the non-doped single layer OLED with a current efficiency of 0.38 cd A −1 , luminance up to 672 cd m −2 . The single layer doped OLEDs with the bipolar compound as host achieved blue, green and red phosphorescence OLEDs with current efficiency of 0.083, 13.42, 2.58 cd A −1 and luminance up to 108, 17103, 1347 cd m −2 , respectively. The performance of single layer OLEDs has been greatly improved by bipolar emitting materials which show a great potential to simplify the configuration of OLEDs. [ABSTRACT FROM AUTHOR]

Three small molecular hole-transporting and emitting materials with naphthalene bridged triphenylamine or carbazole were synthesized. These compounds exhibited high absolute fluorescence quantum yields (70–88%) at the green light region (540–555 nm), suitable highest occupied molecular orbital levels (−5.26 ∼ −5.34 eV) and good hole mobilities (∼10 −4 cm 2 V −1 s −1 ). The hole-only organic light emitting diodes with as-synthesized hole-transporting and emitting materials showed a tune-on voltage and a maximum brightness of 2.6 V and 2010 cd m −2 , respectively. Three stages of voltage-dependent current were observed, which coincide with the characteristic of Ohmic current, Fowler-Nordheim current and space charge limited current. With analysis of above models, overlarge Fowler-Nordheim current and space charge limited current contribute to the low efficiency of the device. All these results indicated that the high hole mobility showed the negative effect on the device efficiency, especially at high operation voltage. [ABSTRACT FROM AUTHOR]