1. Quantitative comparison between Z½ center and carbon vacancy in 4H-SiC.
- Author
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Kawahara, Koutarou, Thang Trinh, Xuan, Tien Son, Nguyen, Janzén, Erik, Suda, Jun, and Kimoto, Tsunenobu
- Subjects
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CARBON , *POINT defects , *DEEP level transient spectroscopy , *ELECTRON paramagnetic resonance , *ELECTRONS - Abstract
In this study, to reveal the origin of the Z½ center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z½ center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z½ concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (VC) measured by EPR under light illumination can well be explained with the Z½ concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z½ center originates from a single VC. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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