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Size reduction in complementary metal–oxide–semiconductor integrated circuits (ICs) is a challenge. Carbon nanotube field effect transistor (CNTFET) technology with advantages such as low power, high mobility, and ballistic transmissions is an alternative. Based on the standard 32 nm CNTFET technology, a new 23-transistor full adder cell is proposed with combining advantages of gate diffusion input and transmission gate techniques, which are low power and full swing. Owing to small number of transistors and internal nodes, the delay time and activity factor decreased to 13.5τ. Simulations of critical parameters variations like VDD, temperature, and fan-out expose better performance of the proposed cell. Investigating the process voltage temperature with Monte Carlo simulation verified better stability, immunity, and tolerability of the cell in comparison with well-known full adder cells. Suggested full adder cell was implemented in 4:2 compressor with 9.0298 fJ of power delay product and minimum area occupation among the references. Based on real chip measurements, total die area occupation for proposed full adder and compressor is 0.505 µm2 and 1.092 µm2, respectively. Proposed circuits were applied to an 8-bit subtractor for orthopantomogram image processing to detect tooth core build up and restored with dental filling in order to maintain a crown restoration. Merits of proposed circuits both in IC design and image processing make these circuits suitable choice for bioelectronics chips. [ABSTRACT FROM AUTHOR]

Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell has full‐swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor. [ABSTRACT FROM AUTHOR]