1. Fabrication of β -Ga 2 O 3 Nanotubes via Sacrificial GaSb-Nanowire Templates.
- Author
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Shangguan, Lei, He, Long-Bing, Dong, Sheng-Pan, Gao, Yu-Tian, Sun, Qian, Zhu, Jiong-Hao, Hong, Hua, Zhu, Chao, Yang, Zai-Xing, and Sun, Li-Tao
- Subjects
NANOTUBES ,KIRKENDALL effect ,NANOWIRES ,CARBON nanotubes ,SEMICONDUCTOR materials ,NANOSTRUCTURES - Abstract
β-Ga
2 O3 nanostructures are attractive wide-band-gap semiconductor materials as they exhibit promising photoelectric properties and potential applications. Despite the extensive efforts on β-Ga2 O3 nanowires, investigations into β-Ga2 O3 nanotubes are rare since the tubular structures are hard to synthesize. In this paper, we report a facile method for fabricating β-Ga2 O3 nanotubes using pre-synthesized GaSb nanowires as sacrificial templates. Through a two-step heating-treatment strategy, the GaSb nanowires are partially oxidized to form β-Ga2 O3 shells, and then, the residual inner parts are removed subsequently in vacuum conditions, yielding delicate hollow β-Ga2 O3 nanotubes. The length, diameter, and thickness of the nanotubes can be customized by using different GaSb nanowires and heating parameters. In situ transmission electron microscopic heating experiments are performed to reveal the transformation dynamics of the β-Ga2 O3 nanotubes, while the Kirkendall effect and the sublimation process are found to be critical. Moreover, photoelectric tests are carried out on the obtained β-Ga2 O3 nanotubes. A photoresponsivity of ~25.9 A/W and a detectivity of ~5.6 × 1011 Jones have been achieved with a single-β-Ga2 O3 -nanotube device under an excitation wavelength of 254 nm. [ABSTRACT FROM AUTHOR]- Published
- 2023
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