1. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE.
- Author
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Tanaka, Atsushi, Barry, Ousmane1, Nagamatsu, Kentaro, Matsushita, Junya, Deki, Manato, Ando, Yuto, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, and Amano, Hiroshi
- Subjects
STRAY currents ,CARRIER density ,GALLIUM nitride ,METAL organic chemical vapor deposition ,VAPOR phase epitaxial growth ,PHOTOLUMINESCENCE - Abstract
In this study, GaN m-plane Schottky barrier diodes fabricated with a metalorganic vapor-phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse-biased condition was observed. We showed that the leakage-current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m-plane devices. (a) four-faceted hillocks on m-plane GaN MOVPE sample, facet dependence of (b) leakage current and (c) PL peak intensity of the m-plane GaN Schottky barrier diode. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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