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Semiconductor materials, which are the aim of this study, are among the most recent advanced materials in the infrared and microwave domains. The reason for focusing on semiconducting elastic materials stems from their abundance in nature and also their numerous benefits in mechanical engineering and cotemporary physics. This work intends to provide a theoretical framework by considering the effects of thermal and electronic elastic deformation in a semiconductor medium during the exciting thermo-photovoltaic process. To this end, a modified photothermal model, in which the heat conduction is represented by the Moore–Gibson–Thompson (MGT) equation, is established by incorporating a relaxation parameter into the Green–Naghdi type III concept. The proposed model is used to investigate the interactions between plasma, thermal and elastic processes through a solid sphere of semiconductor material subject to a thermal shock in conjunction with an external magnetic field. The influence of thermal and carrier lifetime parameters on different physical properties of silicon material is graphically illustrated using theoretical simulated results by employing the Laplace technique. [ABSTRACT FROM AUTHOR]

The current study investigates thermophotovoltaic interactions using a new mathematical model of thermoelasticity established on a modification of the Green–Naghdi model of type III (GN-III). The basic equations, in which the heat transfer is in the form of the Moore–Gibson–Thompson (MGT) equation, are derived by adding a single delay factor to the GN-III model. The impact of temperature and electrical elastic displacement of semiconductors throughout the excited thermoelectric mechanism can be studied theoretically using this model. The proposed model was used to investigate the interactions between the processes of thermoelastic plasma in a rotating semiconductor solid sphere that was subjected to a thermal shock and crossed to an externally applied magnetic field. The influence of rotation parameters on various photothermal characteristics of silicon solid was presented and explored using the Laplace technique. [ABSTRACT FROM AUTHOR]