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The authors show in this Letter that photoconductors based on GaAs grown at low temperatures can exhibit photoresponses as high as 25 mA/W under continuous-wave 1550-nm-wavelength illumination. It is achieved by using an optical Fabry–Pérot cavity in order to improve the external quantum efficiency and by decreasing the post-growth annealing temperature down-to 450°C. [ABSTRACT FROM AUTHOR]

This Letter reports on new experimental high dynamic range sub‐sampling performances obtained from nanoscale microwave photoconductive switches operating under a 0.8 µm wavelength pulsed illumination. Experimental results have been performed on different samples benefiting of a low temperature grown Gallium Arsenide absorbing layer on GaAs substrate, coplanar microwave electrode profile optimisation, and the use of an ultra‐low noise jitter optical source delivering optical pulses of 1 to10 ps pulse width at a 2 GHz repetition frequency at 0.8 µm optical wavelength. Thanks to carrier lifetime tunability achievement from 1 to 20 ps, in association with a carrier mobility of 3900 cm²/V.s, experimental demonstrations of 54 and 45 dB signal‐to‐noise ratio microwave signal sampling for signals at 5,76 and 20 GHz frequency bandwidth respectively confirms submicron devices functionality as a new class of single channel photonic analogue to digital converters. [ABSTRACT FROM AUTHOR]