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Multilayer ceramic actuators find extensive utility in applications requiring precise displacement control or force output, due to their advantages of high precision control, rapid response, low driving voltage, low power consumption, and so on. For practical applications, there is a need for high‐performance multilayer ceramic actuators (MLAs) that combine cost‐effectiveness, efficiency, and temperature stability. In this work, 1.5 mol%Sm‐doped 0.25 Pb(Mg1/3Nb2/3)O3–0.36PbZrO3–0.39PbTiO3 piezoelectric ceramics with PbO–CuO as sintering aid were fabricated. The addition of PbO–CuO significantly reduced the sintering temperature by 300°C, while having minimal impact on the piezoelectric properties. The optimized sintering condition, achieved at a low sintering temperature of 950°C with the introduction of a tiny 0.4 wt% sintering aid, yields impressive piezoelectric strain coefficient d33* = 690 pm/V. This substantiates the viability of employing low‐cost Ag/Pd (90/10) as inner electrode, which can be co‐fired with ceramic layer to fabricate MLA. This innovation enables a remarkable displacement of 1 µm at a low driving voltage of 200 V across a 9‐layers piezoelectric actuator, accompanied by high‐temperature stability, exhibiting <20% variation over the temperature range of 30–250°C. These results underscore a great potential for high‐performance piezoelectric actuators over a broad temperature range. [ABSTRACT FROM AUTHOR]

The development of ferroelectric ceramics with both large piezoelectric responses and broad service temperature range is still a key challenge for practical applications due to the so-called d 33 - T C trade-off. Here we report the strategy to utilize the synergistic contribution of morphotropic phase boundary and enhanced local structural heterogeneity, in which an excellent piezoelectric coefficient d 33 of 680 pC/N and a high Curie temperature of 330 ℃ are simultaneously achieved in Sm modified 0.25PIN-0.325PZ-0.425PT ceramics. The underlying mechanism responsible for the high dielectric and piezoelectric properties is studied based on cryogenic dielectric measurement and Rayleigh analysis. Of particular interest is that, a high field-induced strain of 0.19% is achieved in 0.25PIN-0.32PZ-0.43PT at electric field of 20 kV/cm, corresponding to a piezoelectric d 33 * of 945 pm/V, showing an excellent temperature stability with minimal variation of 7% up to 310 °C. This work demonstrates the introduction of high temperature end members and rare earth doping are conducive to ferroelectric solid solutions with desired broad usage temperature range and superior piezoelectric properties, which will greatly benefit high temperature actuator applications. [ABSTRACT FROM AUTHOR]

There is a great demand to develop ferroelectric ceramics with both high piezoelectric coefficient and broad temperature usage range for emerging electromechanical applications. Herein, a series of Sm3+‐doped 0.25Pb(Mg1/3Nb2/3)O3‐(0.75−x)PbZrO3‐xPbTiO3 ceramics were fabricated by solid‐state reaction method. The phase structure, dielectric and piezoelectric properties were investigated, where the optimum piezoelectric coefficient d33 = 745 pC/N and electromechanical coupling factor k33 = 0.79 were obtained at the morphotropic phase boundary composition x = 0.39, with good Curie temperature TC of 242°C. Of particular importance is that high‐temperature stability of the piezoelectric and field‐induced strain was obtained over the temperature range up to 230°C for the tetragonal compositions of x = 0.40. The underlying mechanism responsible for the high piezoelectricity and temperature stability is the synergistic contribution of the MPB and local structural heterogeneity, providing a good paradigm for the design of high‐performance piezoelectric materials to meet the challenge of piezoelectric applications at elevated temperature. [ABSTRACT FROM AUTHOR]

Rare earth (Eu3+)‐modified Pb(Mg1/3Nb2/3)O3‐PbTiO3 (PMN‐PT) polycrystalline ferroelectric ceramics were fabricated by high‐temperature solid‐state sintering, the phase structure, dielectric and piezoelectric properties were investigated. Eu3+ addition was found to significantly improve dielectric and piezoelectric properties of PMN‐PT, where the optimized properties were achieved for the composition of 2.5 mol%Eu: 0.72PMN‐0.28PT, with the piezoelectric d33 = 1420 pC/N, dielectric εr = 12 200 and electromechanical k33 = 0.78, respectively. All these results indicate that the Eu3+‐doped PMN‐PT ceramics are promising candidates for high‐performance room‐temperature piezoelectric devices. [ABSTRACT FROM AUTHOR]