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Yttria (Y 2 O 3) is the most popular lining material for the inner walls of plasma chambers, owing to its well-known resistance against corrosion by reactive fluorinated plasma. Yttria has a relatively lower toughness and strength compared to alumina (Al 2 O 3) and zirconia (ZrO 2). The present work aims to explore the strengthening and toughening of yttria by doping with zirconia, while retaining its good corrosion resistance. Ceramics with zirconia to yttria molar ratios of 2:8 and 5:5 (named 20ZY and 50ZY, respectively) were fabricated by pressure sintering in Ar atmosphere. The corrosion of the prepared ceramics in reactive fluorinated plasma (C 4 F 8 /CHF 3 /Ar) was investigated and compared with that of yttria as a control. The results indicated that 20ZY exhibited excellent corrosion resistance, comparable to that of yttria, while the fracture toughness and flexural strength showed increases of 87% and 44%, respectively. 50ZY exhibited a further improvement in fracture toughness and flexural strength, but at the price of a much lower resistance against plasma corrosion. A percolation model was proposed to interpret the observed plasma corrosion behaviors. [ABSTRACT FROM AUTHOR]

[Display omitted] • A novel (1- x)NN– x BAY lead-free composite ceramic system is proposed. • High energy storage performance can be obtained under a moderate electric field. • The 0.88NN–0.12BAY ceramic exhibits extremely low dielectric loss. • The 0.88NN–0.12BAY ceramic exhibits ultrahigh stability. Environmentally friendly, high-performance, lead-free dielectric ceramic capacitors are urgently required for efficient and clean energy storage devices. However, most ferroelectric capacitors require excessively high electric fields to achieve large energy storage densities. In this study, we designed and fabricated a (1- x)Na 0.98 NbO 3 – x Bi(Al 0.5 Y 0.5)O 3 (abbreviated as (1- x)NN- x BAY) composite system with different BAY doping levels using a traditional solid-state reaction method. By introducing 12 mol% BAY into nonstoichiometric NN, the polarization–electric field loop of the 0.88NN–0.12BAY ceramic became significantly slender and showed a superior relaxor behavior. Consequently, a remarkably low dielectric loss of tanδ < 0.005, high energy storage density of ∼ 4.64 J/cm3, and high efficiency of ∼ 85.98 % were simultaneously obtained in the 0.88NN–0.12BAY ceramic under a moderate electric field of 223.47 kV/cm. Furthermore, it exhibited ultrahigh stability in the temperature range of 25–200 °C and wide frequency range of 1–200 Hz, even after 108 electrical cycles. This study demonstrated a promising candidate material for energy storage devices operating under low or medium electric fields. [ABSTRACT FROM AUTHOR]