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There is evidence that magnetism can potentially increase the thermopower of materials, most likely due to magnon scattering, suggesting the incorporation of intrinsic magnetic semiconductors in non-magnetic thermoelectric materials. Here, samples of p-type Bi0.5Sb1.5Te3 with 10 at. % excess Te are ball-milled with varying ratios of the antiferromagnetic semiconductor CrSb (0, 0.125, 0.5, and 1 wt. %) to prepare bulk samples by spark plasma sintering technique. The thermopower of samples containing CrSb is increased due to an increase in the effective mass of the charge carriers, indicating that there is a drag effect originating from the magnetic particles. However, this was at the expense of reduced electrical conductivity caused by reduced charge carrier mobility. While overall only marginal improvements in power factors were observed, these samples exhibited significantly lower thermal conductivity compared to the single-phase material. As a result, a peak zT value of ∼1.4 was achieved at 325 K for the sample with 0.125 wt. % CrSb. These results highlight the potential of incorporating magnetic secondary phases to enhance the thermoelectric performance of materials. [ABSTRACT FROM AUTHOR]

Among layered oxygen-containing compounds, BiCuSeO is one of the most promising candidates for thermoelectric applications due to its intrinsically low thermal conductivity and good thermal stability. However, the rather poor electrical conductivity of pristine BiCuSeO hinders its potential. Further enhancement of the thermoelectric performance by single doping at Bi site is limited mainly due to dramatic decrease of carrier mobility. Thus, new strategies, such as dual doping or doping with variable-valence elements seem to be promising. Along with that, the development of a fast and scalable synthesis route is essential for the industrial-scale fabrication of thermoelectric materials. Hence, in this paper, Bi 1– x Sm x CuSeO samples (0 ≤ x ≤ 0.08) have been synthesized with a simple and scalable reactive sintering process. For comparison, Bi 1– x Sm x CuSeO oxyselenides were also obtained by the conventional solid-state route. Our results highlight that, Sm for Bi substitution increases the electrical conductivity by 1.5–2 times and decreases the Seebeck coefficient by ~1.4 times at 873 K for both series. Overall, considering the increase of lattice thermal conductivity upon doping and not optimized power factor, the figure of merit z T is reducing upon doping. • Sm-doped BiCuSeO oxyselenides fabricated by reactive sintering. • Sm doping leads to an increase of σ from 39 Ω–1 cm–1 to ~55 Ω–1 cm–1 at 873 K. • Quality factor is reduced upon Sm doping due to increase in κ and decrease of μ w. [ABSTRACT FROM AUTHOR]