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Silver‐bismuth‐based perovskite‐inspired materials (PIMs) are increasingly being explored as non‐toxic materials in photovoltaic applications. However, many of these materials exhibit an ultrafast localization of photogenerated charge carriers that is detrimental for charge‐carrier extraction. In this work, such localization processes are explored for thermally evaporated thin films of compositions lying along the (AgI)x(BiI3)y series, namely BiI3, AgBi2I7, AgBiI4, Ag2BiI5, Ag3BiI6, and AgI, to investigate the impact of changing Ag+/Bi3+ content. A persistent presence of ultrafast charge‐carrier localization in all mixed compositions and BiI3, together with unusually broad photoluminescence spectra, reveal that eliminating silver will not suppress the emergence of a localized state. A weak change in electronic bandgap and charge‐carrier mobility reveals the resilience of the electronic band structure upon modifications in the Ag+/Bi3+ composition of the mixed‐metal rudorffites. Instead, chemical composition impacts the charge‐carrier dynamics indirectly via structural alterations: Ag‐deficient compositions demonstrate stronger charge‐carrier localization most likely because a higher density of vacant sites in the cationic sublattice imparts enhanced lattice softness. Unraveling such delicate interplay between chemical composition, crystal structure, and charge‐carrier dynamics in (AgI)x(BiI3)y rudorffites provides crucial insights for developing a material‐by‐design approach in the quest for highly efficient Bi‐based PIMs. [ABSTRACT FROM AUTHOR]

Mixed halide perovskites can provide optimal bandgaps for tandem solar cells which are key to improved cost-efficiencies, but can still suffer from detrimental illumination-induced phase segregation. Here we employ optical-pump terahertz-probe spectroscopy to investigate the impact of halide segregation on the charge-carrier dynamics and transport properties of mixed halide perovskite films. We reveal that, surprisingly, halide segregation results in negligible impact to the THz charge-carrier mobilities, and that charge carriers within the I-rich phase are not strongly localised. We further demonstrate enhanced lattice anharmonicity in the segregated I-rich domains, which is likely to support ionic migration. These phonon anharmonicity effects also serve as evidence of a remarkably fast, picosecond charge funnelling into the narrow-bandgap I-rich domains. Our analysis demonstrates how minimal structural transformations during phase segregation have a dramatic effect on the charge-carrier dynamics as a result of charge funnelling. We suggest that because such enhanced recombination is radiative, performance losses may be mitigated by deployment of careful light management strategies in solar cells. Phase segregation in mixed halide perovskite is known to alter the optoelectronic properties, but how it affects charge carriers is not clear. Here, the authors use THz spectroscopy to reveal that high carrier mobilities are well preserved, while recombination dynamics is affected by charge funnelling upon segregation. [ABSTRACT FROM AUTHOR]

Trap‐related charge‐carrier recombination fundamentally limits the performance of perovskite solar cells and other optoelectronic devices. While improved fabrication and passivation techniques have reduced trap densities, the properties of trap states and their impact on the charge‐carrier dynamics in metal‐halide perovskites are still under debate. Here, a unified model is presented of the radiative and nonradiative recombination channels in a mixed formamidinium‐cesium lead iodide perovskite, including charge‐carrier trapping, de‐trapping and accumulation, as well as higher‐order recombination mechanisms. A fast initial photoluminescence (PL) decay component observed after pulsed photogeneration is demonstrated to result from rapid localization of free charge carriers in unoccupied trap states, which may be followed by de‐trapping, or nonradiative recombination with free carriers of opposite charge. Such initial decay components are shown to be highly sensitive to remnant charge carriers that accumulate in traps under pulsed‐laser excitation, with partial trap occupation masking the trap density actually present in the material. Finally, such modelling reveals a change in trap density at the phase transition, and disentangles the radiative and nonradiative charge recombination channels present in FA0.95Cs0.05PbI3, accurately predicting the experimentally recorded PL efficiencies between 50 and 295 K, and demonstrating that bimolecular recombination is a fully radiative process. [ABSTRACT FROM AUTHOR]

Metal‐halide perovskites (MHP) are highly promising semiconductors for light‐emitting and photovoltaic applications. The colloidal synthesis of nanocrystals (NCs) is an effective approach for obtaining nearly defect‐free MHP that can be processed into inks for low‐cost, high‐performance device fabrication. However, disentangling the effects of surface ligands, morphology, and boundaries on charge‐carrier transport in thin films fabricated with these high‐quality NCs is inherently difficult. To overcome this fundamental challenge, terahertz (THz) spectroscopy is employed to optically probe the photoconductivity of CsPbBr3 NC films. The vibrational and optoelectronic properties of the NCs are compared with those of the corresponding bulk polycrystalline perovskite and significant deviations are found. Charge‐carrier mobilities and recombination rates are demonstrated to vary significantly with the NC size. Such dependences derive from the localized nature of charge carriers within NCs, with local mobilities dominating over interparticle transport. It is further shown that the colloidally synthesized NCs have distinct vibrational properties with respect to the bulk perovskite, exhibiting blue‐shifted optical phonon modes with enhanced THz absorption strength that also manifest as strong modulations in the THz photoconductivity spectra. Such fundamental insights into NC versus bulk properties will guide the optimization of nanocrystalline perovskite thin films for optoelectronic applications. [ABSTRACT FROM AUTHOR]

The photoluminescence, transmittance, charge-carrier recombination dynamics, mobility, and diffusion length of CH3NH3PbI3 are investigated in the temperature range from 8 to 370 K. Profound changes in the optoelectronic properties of this prototypical photovoltaic material are observed across the two structural phase transitions occurring at 160 and 310 K. Drude-like terahertz photoconductivity spectra at all temperatures above 80 K suggest that charge localization effects are absent in this range. The monomolecular charge-carrier recombination rate generally increases with rising temperature, indicating a mechanism dominated by ionized impurity mediated recombination. Deduced activation energies Ea associated with ionization are found to increase markedly from the room-temperature tetragonal ( Ea ≈ 20 meV) to the higher-temperature cubic ( Ea ≈ 200 meV) phase adopted above 310 K. Conversely, the bimolecular rate constant decreases with rising temperature as charge-carrier mobility declines, while the Auger rate constant is highly phase specific, suggesting a strong dependence on electronic band structure. The charge-carrier diffusion length gradually decreases with rising temperature from about 3 μm at −93 °C to 1.2 μm at 67 °C but remains well above the optical absorption depth in the visible spectrum. These results demonstrate that there are no fundamental obstacles to the operation of cells based on CH3NH3PbI3 under typical field conditions. [ABSTRACT FROM AUTHOR]

Hybrid metal-halide perovskites are promising new materials for use in solar cells; however, their chemical stability in the presence of moisture remains a significant drawback. Quasi two-dimensional (2D) perovskites that incorporate hydrophobic organic interlayers offer improved resistance to degradation by moisture, currently still at the cost of overall cell efficiency. To elucidate the factors affecting the optoelectronic properties of these materials, we have investigated the charge transport properties and crystallographic orientation of mixed methylammonium (MA)-phenylethylammonium (PEA) lead iodide thin films as a function of the MA-to-PEA ratio and, thus, the thickness of the "encapsulated" MA lead-halide layers. We find that monomolecular charge-carrier recombination rates first decrease with increasing PEA fraction, most likely as a result of trap passivation, but then increase significantly as excitonic effects begin to dominate for thin confined layers. Bimolecular and Auger recombination rate constants are found to be sensitive to changes in electronic confinement, which alters the density of states for electronic transitions. We demonstrate that effective charge-carrier mobilities remain remarkably high (near 10 cm²V−1s−1) for intermediate PEA content and are enhanced for preferential orientation of the conducting lead iodide layers along the probing electric field. The trade-off between trap reduction, electronic confinement, and layer orientation leads to calculated charge-carrier diffusion lengths reaching a maximum of 2.5 μm for intermediate PEA content (50%). [ABSTRACT FROM AUTHOR]

Achieving bulk-like charge carriermobilities in semiconductornanowires is a major challenge facing the development of nanowire-basedelectronic devices. Here we demonstrate that engineering the GaAsnanowire surface by overcoating with optimized AlGaAs shells is aneffective means of obtaining exceptionally high carrier mobilitiesand lifetimes. We performed measurements of GaAs/AlGaAs core–shellnanowires using optical pump-terahertz probe spectroscopy: a noncontactand accurate probe of carrier transport on ultrafast time scales.The carrier lifetimes and mobilities both improved significantly withincreasing AlGaAs shell thickness. Remarkably, optimized GaAs/AlGaAscore–shell nanowires exhibited electron mobilities up to 3000cm2V–1s–1, reachingover 65% of the electron mobility typical of high quality undopedbulk GaAs at equivalent photoexcited carrier densities. This pointsto the high interface quality and the very low levels of ionized impuritiesand lattice defects in these nanowires. The improvements in mobilitywere concomitant with drastic improvements in photoconductivity lifetime,reaching 1.6 ns. Comparison of photoconductivity and photoluminescencedynamics indicates that midgap GaAs surface states, and consequentlysurface band-bending and depletion, are effectively eliminated inthese high quality heterostructures. [ABSTRACT FROM AUTHOR]

We have investigated the dynamicsof hot charge carriers in InPnanowire ensembles containing a range of densities of zinc-blendeinclusions along the otherwise wurtzite nanowires. From time-dependentphotoluminescence spectra, we extract the temperature of the chargecarriers as a function of time after nonresonant excitation. We findthat charge-carrier temperature initially decreases rapidly with timein accordance with efficient heat transfer to lattice vibrations.However, cooling rates are subsequently slowed and are significantlylower for nanowires containing a higher density of stacking faults.We conclude that the transfer of charges across the type II interfaceis followed by release of additional energy to the lattice, whichraises the phonon bath temperature above equilibrium and impedes thecarrier cooling occurring through interaction with such phonons. Theseresults demonstrate that type II heterointerfaces in semiconductornanowires can sustain a hot charge-carrier distribution over an extendedtime period. In photovoltaic applications, such heterointerfaces mayhence both reduce recombination rates and limit energy losses by allowinghot-carrier harvesting. [ABSTRACT FROM AUTHOR]

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering. [ABSTRACT FROM AUTHOR]

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm2/(V s)). This is due to the weak influence of surface traps with respect to other III–V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth. [ABSTRACT FROM AUTHOR]