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This paper aims at designing a digital approach based low jitter, smaller area and wide frequency range phase locked loop (PLL) to reduce the design efforts and power which can be used in System-on-chip applications for operating frequency in the range of 0.025–1.6 GHz. The low power, scalable and compact charge pump is proposed which reduces the overall power consumption and area of proposed PLL. A frequency phase detector (PFD) based on inverters and tri-state buffers have been proposed for the PLL. It is fast which improves the locking time of PLL. Also, pseudo-differential voltage controlled oscillator (VCO) is designed with CMOS inverter gates. The inverters are used as phase interpolator to maintain the phase difference of 180∘ between two outputs of VCO. Also, the inverters are used as variable capacitors to vary the frequency of proposed VCO with control voltage. It demonstrates the good phase noise performance enabling proposed PLL to have low jitter and wide frequency range. All the major blocks like PFD, charge pump and VCO are designed using digital gate methodology thus saving area and power and also reduce design efforts. Also, these digitally designed blocks enable the PLL to have low jitter small area and wide range. The proposed PLL is designed in a 0.18- μ m CMOS technology with supply voltage of 1.8 V. The output clocks with cycle-to-cycle jitter of 2.13 ps at 1.6 GHz. The phase noise of VCO is − 137 dBc/Hz at an offset of 100 MHz and total power consumed by the proposed PLL is 2.63 mW at 1.6 GHz. [ABSTRACT FROM AUTHOR]

A power and area efficient metal-oxide semiconductor field-effect transistor (MOSFET)-only 1.5-bit fully differential pipelined analog-to-digital converter (ADC) stage is proposed and designed in TSMC 0.18 μm digital CMOS technology with supply voltage of 1.8 V. It is based on charge pump based technique to achieve the stage voltage gain of 2. Various capacitances are implemented by MOSCAPs (capacitance offered by the MOSFET), offering compatibility with cheaper digital complimentary metal-oxide semiconductor (CMOS) process in order to reduce the much required manufacturing cost. The proposed stage suffers from only linear gain error with full signal swing of 2 V peak-to-peak (p–p) differential. Using the proposed stage, un-calibrated signal-to-noise and distortion ratio (SNDR) and spurious-free dynamic range (SFDR) for 10-bit, 100 MS/s pipelined ADC are 40.11 and 40.86 dB, respectively, which can be further increased by using a simple digital calibration technique. Comparison between the proposed stage and conventional operational amplifier based stage shows insensitivity towards capacitor mismatch along with power savings and design simplicity. [ABSTRACT FROM AUTHOR]

In the presented work, digital background calibration of a charge pump based pipelined ADC is presented. A 10-bit 100 MS/s pipelined ADC is designed using TSMC 0.18 µm CMOS technology operating on a 1.8 V power supply voltage. A power efficient opamp-less charge pump based technique is chosen to achieve the desired stage voltage gain of 2 and digital background calibration is used to calibrate the inter-stage gain error. After calibration, the ADC achieves an SNDR of 66.78 dB and SFDR of 79.3 dB. Also, DNL improves to +0.6/–0.4 LSB and INL improves from +9.3/–9.6 LSB to within ±0.5 LSB, consuming 16.53 mW of power. [ABSTRACT FROM PUBLISHER]

A simple low-power and low-area metal-oxide-semiconductor field-effect transistor-only fully differential 1.5-bit pipelined analog-to-digital converter stage is proposed and designed in Taiwan Semiconductor Manufacturing Company 0.18 μm-technology using BSIM3v3 parameters with supply voltage of 1.8 V in inexpensive digital complementary metal-oxide semiconductor (CMOS) technology. It is based on charge pump technique to achieve the desired voltage gain of 2, independent of capacitor mismatch and avoiding the need of power hungry operational amplifier-based architecture to reduce the power, Si area and cost. Various capacitances are implemented by metal-oxide semiconductor capacitors, offering compatibility with cheaper digital CMOS process in order to reduce the much required manufacturing cost. [ABSTRACT FROM PUBLISHER]