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Solution‐processed 2D materials hold promise for their scalable applications. However, the random, fragmented nature of the solution‐processed nanoflakes and the poor percolative conduction through their discrete networks limit the performance of the enabled devices. To overcome the problem, conduction modulation of the solution‐processed 2D materials is reported via Stark effect. Using liquid‐phase exfoliated molybdenum disulfide (MoS2) as an example, nonlinear conduction switching with a ratio of >105 is demonstrated by the local fields from the interfacial ferroelectric P(VDF‐TrFE). Through density‐functional theory calculations and in situ Raman scattering and photoluminescence spectroscopic analysis, the modulation is understood to arise from a charge redistribution in the solution‐processed MoS2. Beyond MoS2, the modulation may be shown effective for the other solution‐processed 2D materials and low‐dimensional materials. The modulation can open their electronic device applications, for instance, thin‐film nonlinear electronics and non‐volatile memories. [ABSTRACT FROM AUTHOR]

Abstract Solution‐processed 2D materials hold promise for their scalable applications. However, the random, fragmented nature of the solution‐processed nanoflakes and the poor percolative conduction through their discrete networks limit the performance of the enabled devices. To overcome the problem, conduction modulation of the solution‐processed 2D materials is reported via Stark effect. Using liquid‐phase exfoliated molybdenum disulfide (MoS2) as an example, nonlinear conduction switching with a ratio of >105 is demonstrated by the local fields from the interfacial ferroelectric P(VDF‐TrFE). Through density‐functional theory calculations and in situ Raman scattering and photoluminescence spectroscopic analysis, the modulation is understood to arise from a charge redistribution in the solution‐processed MoS2. Beyond MoS2, the modulation may be shown effective for the other solution‐processed 2D materials and low‐dimensional materials. The modulation can open their electronic device applications, for instance, thin‐film nonlinear electronics and non‐volatile memories.