1. Distribution of Species and Ga-N Bonds in Silicon coimplanted with Gallium and Nitrogen ions.
- Author
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Surodin, S. I., Nikolitchev, D. E., Kryukov, R. N., Belov, A. I., Korolev, D. S., Mikhaylov, A. N., and Tetelbaum, D. I.
- Subjects
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GALLIUM , *CHEMICAL species , *CHEMICAL bonds , *SILICON , *ANNEALING of crystals , *X-ray photoelectron spectroscopy , *NITROGEN - Abstract
The concentration profiles of species in silicon subjected to gallium and nitrogen co-implantation and subsequent annealing have been investigated by the method of X-ray photoelectron spectroscopy combined with the layer-by-layer ion etching of the implanted layer. It is shown that practically entire implanted gallium undergoes outdiffusion, but the preliminary implantation of nitrogen for the synthesis of a barrier SiNx layer makes it possible to avoid the essential loss of gallium. In this case, about 14% of implanted gallium bond to nitrogen. The obtained data are discussed from the viewpoint of the possibility of ion synthesis of GaN inclusions in silicon matrix. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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