18 results on '"Wang, Tongqing"'
Search Results
2. Synthesis of CeO2 Nanoparticles Derived by Urea Condensation for Chemical Mechanical Polishing
3. Polishing mechanisms of various surfactants in chemical mechanical polishing relevant to cobalt interconnects
4. Research on weakly alkaline bulk slurries relevant to chemical mechanical polishing for cobalt interconnects
5. Synthesis of CeO2 Nanoparticles Derived by Urea Condensation for Chemical Mechanical Polishing.
6. Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing.
7. Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry
8. Contact stress non-uniformity of wafer surface for multi-zone chemical mechanical polishing process
9. Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing of GaN.
10. Effect of photocatalytic oxidation technology on GaN CMP.
11. Surface characteristics of ruthenium in periodate-based slurry during chemical mechanical polishing.
12. Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry.
13. Synergetic effect of potassium molybdate and benzotriazole on the CMP of ruthenium and copper in KIO4-based slurry.
14. Effect of zone pressure on wafer bending and fluid lubrication behavior during multi-zone CMP process.
15. A theoretical model incorporating both the nano-scale material removal and wafer global uniformity during planarization process.
16. Comparative study of the lubricating behavior between 12-in. copper disk and wafer during chemical mechanical polishing.
17. Wafer bending/orientation characterization and their effects on fluid lubrication during chemical mechanical polishing.
18. In-situ measurement of Cu film thickness during the CMP process by using eddy current method alone.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.