1. Cross-linking behavior and dielectric properties of SiCN precursor.
- Author
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Guo, Xue, Feng, Yurun, Liu, Yu, Lin, Xiao, Zhang, Yujun, and Gong, Hongyu
- Subjects
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CROSSLINKED polymers , *SILICON carbide , *ELECTRIC properties of metals , *CHEMICAL precursors , *HYDROSILYLATION - Abstract
The SiCN precursor was prepared by cross-linking process using polysilazane (PSZ) as raw materials. The cross-linking behavior and dielectric properties of SiCN precursor were analyzed. The results indicated that the main reactions during cross-linking process were double bond addition reaction, hydrosilylation reaction, dehydrogenation coupling reaction and transamination reaction. The SiCN precursor was made up of Si-C-N network structure and the main chemical bonds were Si-C, Si-N and C-C. The appropriate cross-linking temperature of SiCN precursor was 600 °C. Furthermore, the increasing content and crystallization degree of free carbon could improve the dielectric properties of SiCN precursor. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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