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Start Over Author "Lendenmann, H." Topic chemical structure
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1. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions.

Author

Liu, J. Q., Skowronski, M., Hallin, C., So¨derholm, R., and Lendenmann, H.

Subjects
SILICON carbide, DIODES, TRANSMISSION electron microscopy, TESTING, CHEMICAL structure
Abstract

The structure of stacking faults formed in forward-biased 4H- and 6H-SiC p–n[sup -] diodes was determined using conventional and high-resolution transmission electron microscopy. Typical fault densities were between 10[sup 3] and 10[sup 4] cm[sup -1]. All observed faults were isolated single-layer Shockley faults bound by partial dislocations with Burgers vector of a/3<1–100>-type. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2002
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