1. MOSiC (3C, 4H and 6H) Transistors 130nm by BSIM3v3 Model in Low Voltage and Low Power.
- Author
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Hebali, Mourad, Berbara, Djilali, Benzohra, Mohammed, Chalabi, Djilali, Saïdane, Abdelkader, and Bey, Abdelkader Baghdad
- Subjects
SILICON carbide ,CHEMICAL synthesis ,SILICON compounds ,SILICON carbide fibers ,LOW voltage systems ,FIELD-effect transistors - Abstract
Silicon carbide is a very interesting semiconductor for applications in high temperature, high frequency and high power. In this article, we have studied and compared MOS transistors with 130nm silicon carbide (3C-SiC, 4H-SiC and 6H-SiC) technologies using BSIM3v3 model. To perform this work we have used PSpice to study the characteristics I(V) and the transconductance gm as a function of temperature in the range -200° C to 750° C with a supply voltage VDS = 1.2V. We have also calculated the transition frequencies fT of the three types of transistors. Our results show that the (3C, 4H and 6H)-SiC transistors operate under a low voltage, low power, high temperature and high frequency in submicron dimension. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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