1. Monolayer W xMo1− xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors.
- Author
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Liu, Xinke, Wu, Jing, Yu, Wenjie, Chen, Le, Huang, Zhonghui, Jiang, He, He, Jiazhu, Liu, Qiang, Lu, Youming, Zhu, Deliang, Liu, Wenjun, Cao, Peijiang, Han, Shun, Xiong, Xinbo, Xu, Wangying, Ao, Jin‐Ping, Ang, Kah‐Wee, and He, Zhubing
- Subjects
FIELD-effect transistors ,TUNGSTEN compounds ,MONOMOLECULAR films ,CRYSTAL growth ,ATMOSPHERIC pressure ,CHEMICAL vapor deposition - Abstract
Monolayer W
x Mo1− x S2 -based field effect transistors are demonstrated for the first time on the monolayer Wx Mo1− x S2 flake, which is grown by the chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and photoluminescence measurements have been carried out on the as-grown monolayer Wx Mo1− x S2 . Electronic band structure of monolayer Wx Mo1− x S2 has been calculated using first-principle theory. The thermal stability of monolayer Wx Mo1− x S2 has been evaluated using Raman-temperature measurement. Carrier transport study on the fabricated Wx Mo1− x S2 FETs has been analyzed using temperature-dependent current measurement, and a field effect mobility of ≈30 cm2 V−1 s−1 at 300 K is obtained. [ABSTRACT FROM AUTHOR]- Published
- 2017
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