1. Junction like behavior in polycrystalline diamond films
- Author
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Bhaskaran, Shivakumar, Charlson, Earl Joe, Litvinov, Dmitri, and Makarenko, Boris
- Subjects
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SEMICONDUCTOR junctions , *DIAMOND crystals , *MICROFABRICATION , *POLYCRYSTALS , *CHEMICAL vapor deposition , *HYDROGEN , *IMPEDANCE spectroscopy , *ELECTRIC contacts , *SURFACES (Technology) - Abstract
Abstract: We have successfully fabricated polycrystalline diamond rectifying junction devices on n-type (100) silicon substrates by Hot Filament Chemical Vapor Deposition (HFCVD) using methane/hydrogen process gas and trimethyl borate and trimethyl phosphite dissolved in acetone as p- and n-type dopants, respectively. Impedance spectroscopy and current–voltage analysis indicates that the conduction is vertical down the grains and facets and not due to surface effects. Electrical characteristics were analyzed with In and Ti/Au top metal contacts with Al as the substrate contact. Current–voltage characteristics as a function of temperature showed barrier potentials of 1.1eV and 0.77eV for the In and Ti/Au contacts, respectively. Barrier heights of 4.8eV (In) and 4.4eV (Ti/Au) were obtained from capacitance–voltage measurements. [Copyright &y& Elsevier]
- Published
- 2012
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