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Technetium carbonyl complexes [TcBr(CO)5], [TcI(CO)5], [TcX(CO)3]4 (X = Cl, Br, I), [TcBr(CO)3en] (en = ethylenediamine), [Tc(RCOCHCOR′)(CO)3(Et2NH)] [R = CH3 or C(CH3)3, R′ = CF3], Tc2(CO)10, and [Tc(C5H5)(CO)3] were tested as starting compounds for chemical vapor deposition of technetium coatings. The conditions of deposition of technetium coatings were determined, and the deposition yields were evaluated.

The microstructure, chemical and phase composition, and corrosion resistance of coatings deposited by thermolysis of vapors of volatile technetium carbonyl compounds on a titanium support are studied. The relationship between the nature of the starting compound, conditions of the heat treatment of the coatings, and their chemical and phase composition and corrosion resistance is analyzed. Vacuum annealing at a high temperature (no less than 900°C) is the necessary condition for preparing corrosion-resistant coatings. The highest corrosion resistance is attained at low ( 15%) carbon content of the coating. Some samples are not inferior to dense technetium foil in the corrosion resistance. Ways of further improvement of the deposition process are outlined.

Using standard low-temperature (

For the first time standard low-temperature (< 300 °C) plasma-enhanced chemical vapor deposition technology has been used to obtain a-Si(Er):H films emitting at 1.54 μm at room temperature. The fluorine-containing metalorganic compound Er(HFA)3*DME, exhibiting enhanced volatility and fairly good thermal stability, was used for the first time as the Er source. The establishment of photoconduction in the synthesized samples indicates that they are of satisfactory electronic quality and potentially useful for developing light-emitting diodes at 1.54 μm.