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Herein, we developed a near-invisible solar cell through a precise control of the contact barrier between an indium tin oxide (ITO) electrode and a monolayer tungsten disulfide (WS2), grown by chemical vapor deposition (CVD). The contact barrier between WS2 and ITO was controlled by coating various thin metals on top of ITO (Mx/ITO) and inserting a thin layer of WO3 between Mx/ITO and the monolayer WS2, which resulted in a drastic increase in the Schottky barrier height (up to 220 meV); this could increase the efficiency of the charge carrier separation in our Schottky-type solar cell. The power conversion efficiency (PCE) of the solar cell with the optimized electrode (WO3/Mx/ITO) was more than 1000 times that of a device using a normal ITO electrode. Large-scale fabrication of the solar cell was also investigated, which revealed that a simple size expansion with large WS2 crystals and parallel long electrodes could not improve the total power (PT) obtained from the complete device even with an increase in the device area; this can be explained by the percolation theory. This problem was addressed by reducing the aspect ratio (width/channel length) of the unit device structure to a value lower than a critical threshold. By repeating the experiments on this optimized unit device with an appropriate number of series and parallel connections, PT could be increased up to 420 pW from a 1-cm2 solar cell with a very high value (79%) of average visible transmission (AVT). [ABSTRACT FROM AUTHOR]

The very early nucleation stage of a transition metal dichalcogenide (TMD) was directly observed with in-situ monitoring of chemical vapor deposition and automated image analysis. Unique nucleation dynamics, such as very large critical nuclei and slow to rapid growth transitions, were observed during the vapor–liquid–solid (VLS) growth of monolayer tungsten disulfide (WS2). This can be explained by two-step nucleation, also known as non-classical nucleation, in which metastable clusters are formed through the aggregation of droplets. Subsequently, nucleation of solid WS2 takes place inside the metastable cluster. Furthermore, the detailed nucleation dynamics was systematically investigated from a thermodynamic point of view, revealing that the incubation time of metastable cluster formation follows the traditional time–temperature transformation diagram. Quantitative phase field simulation, combined with Bayesian inference, was conducted to extract quantitative information on the growth dynamics and crystal anisotropy from in-situ images. A clear transition in growth dynamics and crystal anisotropy between the slow and rapid growth phases was quantitatively verified. This observation supports the existence of two-step nucleation in the VLS growth of WS2. Such detailed understanding of TMD nucleation dynamics can be useful for achieving perfect structure control of TMDs. [ABSTRACT FROM AUTHOR]

We have realized a diameter tuning of single-walled carbon nanotubes (SWNTs) by adjusting process gas pressures with plasma chemical vapor deposition (CVD). Detailed photoluminescence measurements reveal that the diameter distribution of SWNTs clearly shifts to a large-diameter region with an increase in the pressure during plasma CVD, which is also confirmed by Raman scattering spectroscopy. Based on the systematical investigation, it is found that the main diameter of SWNTs is determined by the pressure during the heating in an atmosphere of hydrogen and the diameter distribution is narrowed by adjusting the pressure during the plasma generation. Our results could contribute to an application of SWNTs to high-performance thin-film transistors, which requires the diameter-controlled semiconductor-rich SWNTs. [ABSTRACT FROM AUTHOR]

Recent research in plasma chemical vapor deposition (CVD) for single-walled carbon nanotube (SWNT) growth has achieved low-temperature synthesis, individually freestanding formation, and structure control of diameter, chirality, and length. Detailed growth kinetics of SWNTs are revealed using a combination of techniques for plasma control and nanomaterial analysis. Plasma CVD also allows tube metallicity to be controlled by tuning the mean diameter of SWNTs. This plasma CVD progress contributes to the next stage of nanotube fabrication, which is required for practical use of SWNTs in a variety of applications. [ABSTRACT FROM AUTHOR]

We present the first demonstration of the nonmagnetic catalyzed synthesis of narrow-chirality distributed single-walled carbon nanotubes (SWNTs). Based on the systematic investigation using different combinations of catalyst types (magnetic or nonmagnetic) and chemical vapor deposition (CVD) methods (thermal CVD (TCVD) or plasma CVD (PCVD)), PCVD with the nonmagnetic catalyst under the appropriate H2 concentration is found to be critical as the methodological element of realizing the narrow-chirality distribution. Electrical measurements of thin film SWNTs produced under the different combinations of catalyst types and CVD methods are also investigated, which reveals the SWNTs grown from the nonmagnetic catalyst with PCVD display the best device performance. [ABSTRACT FROM AUTHOR]

The remarkable etching reaction of single-walled carbon nanotubes (SWNTs) has been observed in their growth of the parameter-controlled plasma chemical vapor deposition (CVD). The time evolution study of the SWNTs growth leads to establishing a growth equation which can completely express the growth kinetics of SWNTs in the plasma CVD. The growth equation is found to reveal that there are several key parameters which directly affect the etching reaction of SWNTs. Furthermore, such kinetics of the SWNT etching in plasmas can perfectly be explained with a reactive ion etching model. [ABSTRACT FROM AUTHOR]

Herein, we developed a near-invisible solar cell through a precise control of the contact barrier between an indium tin oxide (ITO) electrode and a monolayer tungsten disulfide (WS2), grown by chemical vapor deposition (CVD). The contact barrier between WS2 and ITO was controlled by coating various thin metals on top of ITO (Mx/ITO) and inserting a thin layer of WO3 between Mx/ITO and the monolayer WS2, which resulted in a drastic increase in the Schottky barrier height (up to 220 meV); this could increase the efficiency of the charge carrier separation in our Schottky-type solar cell. The power conversion efficiency (PCE) of the solar cell with the optimized electrode (WO3/Mx/ITO) was more than 1000 times that of a device using a normal ITO electrode. Large-scale fabrication of the solar cell was also investigated, which revealed that a simple size expansion with large WS2 crystals and parallel long electrodes could not improve the total power (PT) obtained from the complete device even with an increase in the device area; this can be explained by the percolation theory. This problem was addressed by reducing the aspect ratio (width/channel length) of the unit device structure to a value lower than a critical threshold. By repeating the experiments on this optimized unit device with an appropriate number of series and parallel connections, PT could be increased up to 420 pW from a 1-cm2 solar cell with a very high value (79%) of average visible transmission (AVT). [ABSTRACT FROM AUTHOR]