1. Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates.
- Author
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Wu, Jinxing, Li, Peixian, Xu, Shengrui, Zhou, Xiaowei, Tao, Hongchang, Yue, Wenkai, Wang, Yanli, Wu, Jiangtao, Zhang, Yachao, and Hao, Yue
- Subjects
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METAL organic chemical vapor deposition , *GALLIUM nitride films , *MAGNETRON sputtering , *SAPPHIRES , *CHEMICAL vapor deposition , *CRYSTAL morphology , *EPITAXY , *DISLOCATION density , *SQUARE root - Abstract
Magnetron sputtering is adopted to deposit ~25 nm thick AlN on the surface of hexagonal BN(h-BN)/sapphire substrates, followed by epitaxial GaN growth on top of the AlN/h-BN/sapphire substrate using a metal–organic chemical vapor deposition system. Compared to GaN grown on the h-BN/sapphire surface directly, this method results in a continuous and smooth GaN film with a smaller root mean square roughness. Besides, the introduction of the sputtered AlN layer reduces the dislocation density of GaN by 35.7%. We provide a pathway of GaN epitaxy on the h-BN surface, which significantly improves its surface morphology and crystal quality. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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