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2D transition metal dichalcogenides (TMDs) for advanced logic transistor technologies are deposited by various modifications of the chemical vapor deposition (CVD) method using a wide variety of precursors. Being a major electrical performance limiter, the TMD crystal grain size strongly differs between the various CVD precursor chemistries from nano‐ to millimeter‐sized crystals. However, it remains unclear how the CVD precursor chemistry affects the nucleation density and resulting TMD crystal grain size. This work postulates guiding principles to design a CVD process for highly crystalline TMD deposition using a quantitative analytical model benchmarked against the literature. The TMD nucleation density reduces favorably under low supersaturation conditions where the metal precursor sorption on the starting surface is reversible and the corresponding metal precursor desorption rate exceeds the overall deposition rate. Such reversible precursor adsorption guarantees efficient long‐range gas‐phase lateral diffusion of precursor species in addition to short‐range surface diffusion, which vitally increases crystal grain size. The proposed model explains the large spread in experimentally observed TMD nucleation densities and crystal grain sizes for state‐of‐the‐art CVD chemistries. Ultimately, it empowers the reader to interpret and modulate precursor adsorption and diffusion reactions through designing CVD precursor chemistries. [ABSTRACT FROM AUTHOR]

The present study reports the impact of process conditions and post annealing treatment on the stress and physico-chemical properties in different types of plasma enhanced atomic layer deposited (PEALD) SiNx films. More specifically, the SiNx films deposited at 500 °C were annealed subsequently at 1000 °C in N2 ambient for different times ranging between 30 and 6750 s and were subjected to thickness, mass, refractive index, chemical bonds and structure, H content, N/Si stoichiometry, morphology, roughness, and uniformity monitoring. Depending on the deposition process conditions, we confirm the possibility to form, at 500 °C with PEALD, some very compressive SiN films with reduced hydrogen content by controlling the plasma conditions along the deposition process. More interestingly, these compressive films with low hydrogen concentration exhibit high thermo-mechanical stability compared to hydrogenated PEALD and plasma enhanced chemical vapor deposition silicon nitride from this study or reported in the literature, films which typically tend to become tensile with a similar annealing sequence. These results confirm the importance of the plasma power to engineer the as-deposited silicon nitride stress but also highlight the role of hydrogen in the thermal instability of these layers, a low H concentration being needed for a better mechanical stability. [ABSTRACT FROM AUTHOR]

We conducted isochronal stress hysteresis measurements coupled with thermal desorption spectroscopy on silicon nitride thin films obtained by performing plasma enhanced chemical vapor deposition on (001) silicon wafers. Above the deposition temperature, we observed irreversible stress build-up in parallel to substantial hydrogen effusion out of the films. We confirmed that the hydrogen dissociation and stress build-up can be modeled with similar kinetic equations. The hydrogen dissociation and stress development activation energies as well as the hydrogen diffusion coefficients were determined by fitting the experimental data with solutions to the kinetics and Fickian diffusion equations obtained with the finite difference method. A first order correlation was found between the hydrogen diffusion coefficients calculated between 400 and 800 °C and the silicon nitride film density. [ABSTRACT FROM AUTHOR]

Abstract: A comparison of mechanical properties of amorphous silicon nitride thin films deposited with various techniques used for microelectronic applications was conducted. Nitride films with thicknesses less than 80nm were deposited on (001) oriented silicon wafers by using various methods: low pressure chemical vapor deposition (LPCVD), rapid thermal CVD (RTCVD), atomic layer deposition (ALD) and plasma enhanced CVD (PECVD). The wafer curvature method was used to show that the as-deposited LPCVD, RTCVD and ALD films exhibited tensile residual stresses that decreased with silicon richness. In contrast, the stress of the PECVD as-deposited layers ranged from tensile to ultra-compressive, depending on the exposure to high plasma power and ion bombardment during growth. After high temperature annealing, the LPCVD, RTCVD and ALD nitride stresses were almost unchanged, indicating that these films/substrate systems have significant thermal mechanical stability. In contrast, it was observed that, regardless of the initial stress, the annealed PECVD films developed tensile stress after high temperature treatment, with the same dependence of stress on refractive index as was found with the other deposition techniques. The Young''s moduli, measured by performing nano-indentation on 200nm thick nitride layers, were found for most samples to be correlated with film density. [Copyright &y& Elsevier]

The authors conducted a physico-chemical analysis of tensile sequential-nitrogen-plasma-treated silicon nitride films, which function as stressor liners in complementary metal oxide semiconductor (CMOS) technologies. These films are made of stacked nanometer-thick, plasma-enhanced, chemical vapor-deposited layers which were individually treated with N2-plasma, to increase stress. This study allowed us to monitor the evolution of the films' chemical composition and stress as a function of process parameters such as deposition and post-N2-plasma duration. Consistent with secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) and other physico-chemical analysis results, it was shown that the elementary component of the films can be modeled with a bi-layer consisting of an untreated slice at the bottom that is covered by a more tensile post-treated film. In addition, we observed that longer plasma treatments increase residual stress, SiN bond concentration and layer density, while reducing hydrogen content. The stress increase induced by the plasma treatment was shown to correlate with the increase in SiN bonds following a percolation mechanism that is linked to hydrogen dissociation. Kinetics laws describing both SiN bond generation and stress increase are proposed and it is demonstrated that stress increase follows first-order kinetics. [ABSTRACT FROM AUTHOR]

• Lateral growth of nucleated WS 2 domains on C-plane sapphire by MOCVD in a commercial showerhead reactor was demonstrated. • The crystalline quality of coalesced WS 2 monolayers with <10% bilayer was assessed by GIXRD and 4D-STEM. • Electrical properties of the WS 2 layers were determined using backgated TLM structures demostrating I on /I off > 108 and electron mobility of 5 cm2/Vs. • Impact of the change of offcut direction of sapphire, substrate annealing temperature and WS 2 growth temperature was investigated. The nucleation of tungsten disulfide WS 2 crystallites and coalescence behaviour of monolayer WS 2 films grown on C-plane sapphire have been studied in a commercial AIXTRON close coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor using tungsten hexacarbonyl and di- tert -butyl sulfide as precursors. The influence of sapphire substrates offcut (both orientation and angle), as well as the substrate annealing conditions and growth temperature, on the nucleation and size of the WS 2 domains has been investigated. A higher nucleation temperature combined with increased substrate annealing temperatures was found to promote an increase in the WS 2 domain size. The dependence of surface coverage and coalescence behaviour of the WS 2 domains on the growth duration has also been determined, allowing monolayer WS 2 films with < 10 % bilayer to be obtained. Crystalline quality of the coalesced WS 2 films has been assessed by grazing incidence XRD and misorientation mapping using 4D-scanning transmission electron microscopy, showing a slight in-plane misorientation of the crystallites in the WS 2 monolayer. The electrical performance of the coalesced WS 2 films was assessed using backgated TLM structures demonstrating mobility values of up to 5 cm2/Vs and a high I on /I off ratio greater than 108. [ABSTRACT FROM AUTHOR]