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We report high quality GeSn/GaAs heterostructure photodetectors grown by a modified magnetron sputtering system. A metal-semiconductor-metal photoconductor is fabricated to examine the ability of photodetection for GeSn alloy. Then the GeSn/GaAs heterostructure photodetector is first demonstrated with a detectivity of $1.8\times 10^{9}$ Jones achieved at 1450 nm under an applied reverse voltage bias of −0.1 V, which is comparable to or even better than the GeSn-based photodetectors grown by chemical vapor deposition. The work provides an alternative technique for low cost and large-area fabrication of GeSn based devices. [ABSTRACT FROM AUTHOR]

Ge x Sn 1-x is one of the most promising materials in optoelectronics for its direct band-gap nature. In this paper, we report high-quality Ge and Sn thin films deposited on Si (001) substrates by magnetron sputtering. We found that the growth power and chamber pressure affect the quality of the Ge and Sn thin films significantly but in different ways. By optimizing the deposition conditions, high quality Ge and Sn films are achieved. A clear peak of Ge (004) phase in the x-ray diffraction (XRD) pattern which indicates a high-quality Ge lattice formed is observed, and post-treatment like rapid thermal annealing does not significantly affect the quality of the thin films. [ABSTRACT FROM AUTHOR]