1. InGaAsN Carriers Impulse Response Investigation
- Author
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Amraoui Rachid, Dedier Decoster, and Aissat Abdelkader
- Subjects
Materials science ,chemistry ,Strain (chemistry) ,Depletion region ,Band gap ,chemistry.chemical_element ,Nitrogen ,Molecular physics ,Indium ,Quantum well ,Impulse response ,Photonic crystal - Abstract
This work aims to find a relation between both indium and nitrogen concentrations in InGaAsN and the impulse response on one hand and the depletion region thickness with the impulse response on the other hand. In the present we adopt a new structure with strained quantum well based on double transparent regions p-side and n-side. The impulse response is calculated after fixing indium and nitrogen fractions (x=31.5 %, y=0.2 %) and (x=6.5%, y=2.05 %) with strain E=0.5% and −0.132% respectively having definite bandgap energy parameter
- Published
- 2019