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A novel electroluminescent poly(p-phenylenevinylene) (PPV) derivative was synthesized via the Gilch route, which emits in the blue-greenish region. The required monomer synthesis is a multistep process starting from catechol and does not involve any critical step. The polymer synthesis itself proceeds via standard Gilch conditions and results in constitutionally homogeneous and extraordinary high-molecular-weight PPVs. The characterization of these materials was carried out using nuclear magnetic resonance spectroscopy and size exclusion chromatography measurements. The highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels were estimated by combining information provided by cyclic voltammetry and UV–vis measurements. Finally, the electroluminescent behavior of the polymer was confirmed in an organic light-emitting diode.

In this work, the harmful effect of triplet excitons on the lifetime of poly(p-phenylene vinylene) (PPV)-based organic light emitting diodes is demonstrated. A model system has been designed in which the triplet population in a PPV derivative is increased by blending the polymer with the triplet sensitizer platinum (II) octaethylporphyrine ketone (PtOEPK). The increase in the triplet concentration of the polymer affects both the initial decay and the long-term evolution of luminance and leads to a drastic acceleration of device degradation, reflected in a dramatically shortened lifetime.

Two acene-based semiconductors were investigated with respect to their performance as n-type materials in organic field-effect transistors. The partially fluorinated ditetracenes (Ditetracen is protected by copywrite through the Patent WO/2007/000268. The patent is property of the Dritte Patentportfolio Beteiligungsgesellschaft mbH & Co. KG.) (DT) were synthesized in a high yield with different degrees of fluorination, one with four and another with two fluorine substituents (named as DT-4F and DT-2F, respectively). Both materials exhibit high thermal stability, with decomposition temperatures above 500 C. Since both materials are supposed to have a lowered LUMO level compared to the non-fluorinated parent DT, n-type operation in thin-film transistors (TFTs) with gold source and drain contacts was expected. TFTs based on DT-2F, however, showed weak ambipolar transport only, which demonstrates insufficient fluorination to switch from hole-dominated to electrondominated transport. On the other hand, high performance n-type TFTs have been achieved from DT-4F, with electron mobilities up to 1.0 cm 2 /V s. This result indicates that fluorinated DT material can act as excellent n-type semiconductor for applications in complementary circuits. This is demonstrated in a complementary inverter stage using DT-4Fbased TFTs as n-type transistor and a non-fluorinated DT derivative-based TFT as p-type transistor.

Recently, n-type transport in organic field effect transistors (OFETs) incorporating pentacene on a silicon dioxide (SiO2) dielectric has been demonstrated by Ahles et al. [Appl. Phys. Lett. 85, 4499 (2004)]. The electron transport was made possible by modifying the dielectric/semiconductor interface using traces of Ca. While the facilitation of electron current in pentacene remained unclear at that point, an interface near filling of electron trap states in the transistor channel or on the SiO2 dielectric could be suggested as a possible explanation. In the following the influence of the Ca interlayer on the n-type transport in pentacene based OFETs will be correlated with an x-ray photoelectron spectroscopy analysis of the SiO2/Ca interface, in dependence of the Ca layer thickness. It is demonstrated that for low thicknesses an oxidized Ca insulator is formed on the SiO2 dielectric, allowing for the observed pentacene electron transport. The formation of the oxide is suggested to compensate available el...

In the present paper a new concept towards O-CMOS technology is presented substantiating the importance of the semiconductor/dielectric interface for charge carrier transport in organic semiconductors. It will be demonstrated that by controlling the interface properties of either SiO 2 or PMMA, unipolar p- and n-type OFETs can be realized using a single organic semiconductor and even a single metal for source and drain contacts. Two dielectric/semiconductor interface modifications are considered for the realization of complementary OFETs on the basis of pentacene, otherwise known for its exclusive hole transporting properties. Selective modification of the SiO 2 dielectric interface with traces of vacuum deposited Ca, allows for electron transport in pentacene and the realization of complementary pentacene OFETs on a single substrate. By this technique electron traps are removed due to a reaction of atomic Ca with oxygen from available hydroxide groups, resulting in the formation of an oxidized Ca layer. In a second approach, it is demonstrated that by selective UV treatment of a PMMA dielectric surface, unipolar n-type pentacene OFETs can be converted to unipolar p-type by the introduction of electron traps in the form of -OH and -COOH groups at the PMMA interface. Both methods allow for the realization of CMOS organic inverter stages with decent electrical properties.