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Electronic doping of organic semiconductors is essential for their usage in highly efficient optoelectronic devices. Although molecular and metal complex-based dopants have already enabled significant progress of devices based on organic semiconductors, there remains a need for clean, efficient and low-cost dopants if a widespread transition towards larger-area organic electronic devices is to occur. Here we report dimethyl sulfoxide adducts as p-dopants that fulfil these conditions for a range of organic semiconductors. These adduct-based dopants are compatible with both solution and vapour-phase processing. We explore the doping mechanism and use the knowledge we gain to 'decouple' the dopants from the choice of counterion. We demonstrate that asymmetric p-doping is possible using solution processing routes, and demonstrate its use in metal halide perovskite solar cells, organic thin-film transistors and organic light-emitting diodes, which showcases the versatility of this doping approach.

Hybrid metal halide perovskites have seen an exponential increase in the scientific community due to their successful introduction in solar cells. However, these materials are known to suffer from thermal instability, toxicity and limited absorption range. One way to overcome these obstacles is by substituting the organic cation with an inorganic one and by replacing the lead with tin, which can shift the absorbance to the near infra-red (NIR). In this work we synthesized several compositions of all inorganic CsSnyPb1−yBrxI3−x (0 ≤ y ≤ 1, 0 ≤ x ≤ 3) perovskites, achieving a wide band gap range from 1.3 eV to 1.75 eV. It was found that Sn stabilizes the CsPbI3 black photovoltaic (PV) active phase and at the same time shifts the absorbance to the NIR. Although some of these perovskite compositions are already known, here we analyzed in detail their physical and electronic properties. Hall effect measurements show an increase in the carrier concentration and Hall mobility with the addition of Sn. Interestingly, the Hall mobility is five times higher for CsSnI3 than in the case of having just 10% Pb and 90% Sn in the perovskite structure. Ultraviolet photoemission spectroscopy (UPS) and density functional theory (DFT) calculations reveal the energy level position and phase mixing, which explain the reduction in the photovoltaic performance with the addition of Sn. The best PV performance of 12.7% efficiency was achieved in the case of an 80 : 20 Pb : Sn ratio, which is one of the highest PCEs reported for similar perovskite compositions.

Surface doping of graphene with redox-active molecules is an effective approach to tune its electrical properties, in particular for application as transparent electrodes. Here we present a study and application of surface n-doping of graphene with the molecular reductant (pentamethylcyclopentadienyl)(1,3,5-trimethylbenzene)ruthenium dimer ([RuCp*Mes]2). Photoemission spectroscopy and carrier-transport measurements are combined to investigate doping-induced changes in the electronic structure of the interface between graphene and phenyldi(pyren-2-yl)phosphine oxide (POPy2), which is a low-electron-affinity material that has been used as an electron-transport layer (ETL) in organic light-emitting diodes. Photoemission and Hall voltage measurements confirm the n-doping of graphene. Doping with 1–2 nm of [RuCp*Mes]2 reduces the graphene work function by 1.8 eV and the electron injection barrier by more than 1 eV, enhancing electron injection into POPy2 by several orders of magnitude. Graphene/POPy2/Al diodes...

Design and modification of interfaces, always a critical issue for semiconductor devices, has become a primary tool to harness the full potential of halide perovskite (HaP)-based optoelectronics, including photovoltaics and light-emitting diodes. In particular, the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review, we describe the unique challenges and opportunities of these approaches (section 1). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surfaces, including topics such as surface termination, surface reactivity, and electronic structure (section 2). This is followed by discussing experimental results on the energetic alignment processes at the interfaces between the HaP and transport and buffer layers. This section includes understandings reached as well as commonly proposed and applied models, especially the often-questionable validity of vacuum level alignment, the importance of interface dipoles, and band bending as the result of interface formation (section 3). We follow this by elaborating on the impact of the interface formation on device performance, considering effects such as chemical reactions and surface passivation on interface energetics and stability. On the basis of these concepts, we propose a roadmap for the next steps in interfacial design for HaP semiconductors (section 4), emphasizing the importance of achieving control over the interface energetics and chemistry (i.e., reactivity) to allow predictive power for tailored interface optimization.

To accelerate materials discovery, computational methods such as inverse materials design have been proposed to predict the properties of target compounds of interest for specific applications. This in silico process can be used to guide subsequent synthesis and characterization. Inverse design is especially relevant for the field of organic molecules, for which there are nearly infinite synthetic modifications possible. With a target application of UV-absorbing, visibly transparent solar cells in mind, we calculated the orbital and transition energies of over 360 possible coronene derivatives. Our screening, or the constraints we imposed on the calculated series, resulted in the selection of three new derivatives, namely contorted pentabenzocoronene (cPBC), contorted tetrabenzocoronene (cTBC), and contorted tetrabenzofuranylbenzocoronene (cTBFBC) for synthesis and characterization. Our materials characterization found agreement between our calculated and experimental energy values, and through testing of these materials in organic photovoltaic (OPV) devices, we fabricated solar cells with an open-circuit voltage of 1.84 V and an average visible transparency of 88% of the active layer; both quantities exceed previous records for visibly transparent coronene-based solar cells. This work highlights the promise of inverse materials design for future materials discovery, as well as improvements to an exciting application of UV-targeted solar cells.

Silicon dominates contemporary solar cell technologies1. But when absorbing photons, silicon (like other semiconductors) wastes energy in excess of its bandgap2. Reducing these thermalization losses and enabling better sensitivity to light is possible by sensitizing the silicon solar cell using singlet exciton fission, in which two excited states with triplet spin character (triplet excitons) are generated from a photoexcited state of higher energy with singlet spin character (a singlet exciton)3–5. Singlet exciton fission in the molecular semiconductor tetracene is known to generate triplet excitons that are energetically matched to the silicon bandgap6–8. When the triplet excitons are transferred to silicon they create additional electron–hole pairs, promising to increase cell efficiencies from the single-junction limit of 29 per cent to as high as 35 per cent9. Here we reduce the thickness of the protective hafnium oxynitride layer at the surface of a silicon solar cell to just eight angstroms, using electric-field-effect passivation to enable the efficient energy transfer of the triplet excitons formed in the tetracene. The maximum combined yield of the fission in tetracene and the energy transfer to silicon is around 133 per cent, establishing the potential of singlet exciton fission to increase the efficiencies of silicon solar cells and reduce the cost of the energy that they generate. A silicon and tetracene solar cell employing singlet fission uses an eight-angstrom-thick hafnium oxynitride interlayer to promote efficient triplet transfer, increasing the efficiency of the cell.

Summary Despite the demonstrated high efficiency of perovskite solar cells and light-emitting devices, the understanding of the intrinsic stability of perovskites is far from complete. In this work, using an ultrasensitive, exfoliated 2D perovskite single-crystal sheet/graphene heterostructure device, we reveal spontaneous iodide loss as an important degradation pathway of 2D perovskite single crystals, which n-dopes the perovskite semiconductor by generating positively charged iodide vacancies. Furthermore, we show that covering perovskites with graphene can suppress the iodide loss, significantly improving perovskite stability. A perovskite phototransistor is demonstrated with a graphene/2D perovskite/graphene structure, which shows no degradation after 75 days. Our work not only provides important insights for future stable perovskite optoelectronic device development, but also demonstrates the potential of graphene as a promising sensitive diagnostic tool for device and material degradation studies.

We investigate the effect of high work function contacts in halide perovskite absorber-based photovoltaic devices. Photoemission spectroscopy measurements reveal that band bending is induced in the absorber by the deposition of the high work function molybdenum trioxide (MoO3). We find that direct contact between MoO3 and the perovskite leads to a chemical reaction, which diminishes device functionality. Introducing an ultrathin spiro-MeOTAD buffer layer prevents the reaction, yet the altered evolution of the energy levels in the methylammonium lead iodide (MAPbI3) layer at the interface still negatively impacts device performance.

We investigate the distribution of valence and tail states in copper phthalocyanine (CuPc) upon the introduction of minute amounts of the p-dopant molybdenum tris[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd)3), using a combination of electron spectroscopy and carrier transport measurements. Density of gap states, conductivity, and hole-hopping activation energy are measured. We observe the progressive filling (and deactivation) of the deepest tail states by charges introduced by the dopants, as well as significant broadening of the CuPc density of states. Simulations relate this broadening to the electrostatic and structural disorder induced by the dopant in the CuPc matrix.

Understanding the origin and distribution of electronic gap states in metal halide perovskite (MHP) thin films is crucial to the further improvement of the efficiency and long-term stability of MHP-based optoelectronic devices. In this work, the impact of Lewis-basic additives introduced in the precursor solution on the density of states in the perovskite bandgap is investigated. Ultraviolet photoemission spectroscopy and contact potential difference measurements are conducted on MHP thin films processed from dimethylformamide (DMF)-based solutions to which either no additive, dimethylsulfoxide (DMSO), or N-methylpyrrolidine-2-thione (NMPT) is added. The results show the presence of a density of states in the gap of methylammonium lead halide films processed from DMSO-containing solution. The density of gap states is either suppressed when the methylammonium concentration in mixed cation films is reduced or when NMPT is used as an additive, and eliminated when methylammonium (MA) is replaced with cesium or formamidinium (FA). These results are consistent with the notion that reaction products that result from DMSO reacting with MA+ in the precursor solution are responsible for the formation of gap states.

Electrical doping of organic semiconductors increases conductivity and reduces injection barriers from electrode materials, both of which effects can improve the performance of organic light-emitting diodes (OLEDs). However, the low electron affinities of typical OLED electron-transport materials make the identification of suitable n-dopants particularly challenging; electropositive metals such as the alkali metals are not easily handled and form monoatomic ions that are rather mobile in host materials, whereas molecular dopants that operate as simple one-electron reductants must have low ionization energies, which leads to severe air sensitivity. This presentation will discuss approaches to circumventing this issue by coupling electron transfer to other chemical reactivity. In particular, dimers formed by certain highly reducing organometallic sandwich compounds and organic radicals can be handled in air, yet have effective reducing potentials, corresponding to formation of the corresponding monomeric cations and contribution of two electrons to the semiconductor, of ca. –2.0 V vs. ferrocene. These values fall a little short of what is required for typical OLED materials; approaches to further extending the doping reach of these dimers will be described. One such approach involving photoirradiation of a dimer:semiconductor blend leads to metastable doping of a material with a redox potential of –2.24 V, which allows the fabrication of efficient OLEDs in which even high-workfunction electrodes, such as indium tin oxide, can be used as electron-injection contacts.

We use a high signal-to-noise X-ray photoelectron spectrum of bulk PbS, GW calculations, and a model assuming parabolic bands to unravel the various X-ray and ultraviolet photoelectron spectral features of bulk PbS as well as determine how to best analyze the valence band region of PbS quantum dot (QD) films. X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) are commonly used to probe the difference between the Fermi level and valence band maximum (VBM) for crystalline and thin-film semiconductors. However, we find that when the standard XPS/UPS analysis is used for PbS, the results are often unrealistic due to the low density of states at the VBM. Instead, a parabolic band model is used to determine the VBM for the PbS QD films, which is based on the bulk PbS experimental spectrum and bulk GW calculations. Our analysis highlights the breakdown of the Brillioun zone representation of the band diagram for large band gap, highly quantum confined PbS QDs. We have also determined that in 1,2-ethanedithiol-treated PbS QD films the Fermi level position is dependent on the QD size; specifically, the smallest band gap QD films have the Fermi level near the conduction band minimum and the Fermi level moves away from the conduction band for larger band gap PbS QD films. This change in the Fermi level within the QD band gap could be due to changes in the Pb:S ratio. In addition, we use inverse photoelectron spectroscopy to measure the conduction band region, which has similar challenges in the analysis of PbS QD films due to a low density of states near the conduction band minimum.

The interfacial band alignment among boron subnaphthalocyanine chloride (SubNc), boron subphthalocyanine chloride (SubPc), and α-sexithiophene (α-6T) is explored using ultraviolet, inverse, and X-ray photoemission spectroscopies (UPS, IPES, and XPS, respectively). With these tools, the ionization energy (IE) and electron affinity (EA) for each material are determined. Layer-by-layer deposition of SubPc and SubNc on α-6T as well as SubPc on SubNc, combined with UPS and IPES, allows for the direct determination of the energy level alignment at the interfaces of interest. A small dipole is found at the α-6T/SubNc/SubPc interface, expanding the donor-LUMO to acceptor-HOMO gap and explaining the large open circuit voltage obtained with these devices. However, there is a small electron barrier between SubNc and SubPc, which may limit the efficiency of electron extraction in the current device configuration. Excess chlorine may be responsible for the high IE and EA found for SubNc and could potentially be remedi...

The large band gaps of existing contorted hexabenzocoronene derivatives severely limit visible-light absorption, restricting the photocurrents generated by solar cells utilizing contorted hexabenzocoronene (cHBC). To decrease the band gap and improve the light-harvesting properties, we synthesized cHBC derivatives having extended heterocyclic moieties as peripheral substituents. Tetrabenzofuranyldibenzocoronene (cTBFDBC) and tetrabenzothienodibenzocoronene (cTBTDBC) both exhibit broader absorption of the solar spectrum compared to cHBC, with peak absorbances on the order of 105 cm–1 in the near-ultraviolet and in the visible. Planar-heterojunction organic solar cells comprising cTBFDBC or cTBTDBC as the donor and C70 as the acceptor surpass those having cHBC in photocurrent generation and power-conversion efficiency. Interestingly, devices containing cTBFDBC/C70 exhibit the highest photocurrents despite cTBTDBC having the smallest band gap of the three cHBC derivatives. X-ray reflectivity of the active la...

Electronic levels and energies of a solid, such as Fermi level, vacuum level, work function, ionization energy or electron affinity, are of paramount importance for the control of device behavior, charge carrier injection and transport. These levels and quantities, however, depend sensitively on the structure and surface morphology and chemical composition of the solid. A small amount of contaminants on a metal surface, or a shift in molecular orientation at the surface of an organic semiconductor, can change work function and vacuum level position by a large fraction of an electron-volt, and significantly impact the electronic structure of interfaces. The goal of this brief focus article is to provide definitions of key concepts and review simple mechanisms that affect these fundamental quantities.

The classical SiO2/Si interface, which is the basis of integrated circuit technology, is prepared by thermal oxidation followed by high temperature (>800 °C) annealing. Here we show that an interface synthesized between titanium dioxide (TiO2) and hydrogen-terminated silicon (H:Si) is a highly efficient solar cell heterojunction that can be prepared under typical laboratory conditions from a simple organometallic precursor. A thin film of TiO2 is grown on the surface of H:Si through a sequence of vapor deposition of titanium tetra(tert-butoxide) (1) and heating to 100 °C. The TiO2 film serves as a hole-blocking layer in a TiO2/Si heterojunction solar cell. Further heating to 250 °C and then treating with a dilute solution of 1 yields a hole surface recombination velocity of 16 cm/s, which is comparable to the best values reported for the classical SiO2/Si interface. The outstanding performance of this heterojunction is attributed to Si-O-Ti bonding at the TiO2/Si interface, which was probed by angle-resolved X-ray photoelectron spectroscopy. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) showed that Si-H bonds remain even after annealing at 250 °C. The ease and scalability of the synthetic route employed and the quality of the interface it provides suggest that this surface chemistry has the potential to enable fundamentally new, efficient silicon solar cell devices.

The spatial stability of the soluble p-dopant molybdenum tris[1-(methoxycarbonyl)-2-(trifluoromethyl)-ethane-1,2-dithiolene] in polymer and polymer blend films is investigated via secondary ion mass spectrometry and current–voltage measurements. Bi-layer and tri-layer model structures, P3HT/doped P3HT and P3HT:ICBA/doped P3HT/P3HT:ICBA respectively, are fabricated using soft-contact transfer lamination to study the diffusion of the dopant. While the dopant is very mobile in pure P3HT, it is far more stable at the interface with the P3HT:ICBA bulk heterojunction. Our findings suggest a promising route to achieve spatially-confined doping with long-term stability, leading to hole-collection/injection contacts for all-solution processed polymer devices.

We demonstrate new approaches to the characterization of oxidized regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) that results from electronic equilibration with device-relevant high work function electrical contacts using high-resolution X-ray (XPS) and ultraviolet (UPS) photoelectron spectroscopy (PES). Careful interpretation of photoemission signals from thiophene sulfur atoms in thin (ca. 20 nm or less) P3HT films provides the ability to uniquely elucidate the products of charge transfer between the polymer and the electrical contact, which is a result of Fermi-level equilibration between the two materials. By comparing high-resolution S 2p core-level spectra to electrochemically oxidized P3HT standards, the extent of the contact doping reaction is quantified, where one in every six thiophene units (ca. 20%) in the first monolayer is oxidized. Finally, angle-resolved XPS of both pure P3HT and its blends with phenyl-C61-butyric acid methyl ester (PCBM) confirms that oxidized P3HT species exist near contacts with work functions greater than ca. 4 eV, providing a means to characterize the interface and "bulk" region of the organic semiconductor in a single film.

The polymer (PBDTTT-c) p-doped with the molecular dopant (Mo(tfd-COCF3)3) exhibits a decline in transport properties at high doping concentrations, which limits the performance attainable through organic semiconductor doping. Scanning Electron Microscopy is used to correlate the evolution of hole conductivity and hopping transport activation energy with the formation of aggregates in the layer. Transmission Electron Microscopy with energy-dispersive X-ray analysis along with liquid-state Nuclear Magnetic Resonance experiments are carried out to determine the composition of the aggregates. This study offers an explanation to the limited efficiency of doping at high dopant concentrations and reinforces the need to increase doping efficiency in order to be able to reduce the dopant concentration and not negatively affect conductivity., Comment: Full papers and figures with supporting information

Oxygen plasma is a widely used treatment to change the surface properties of organic layers. This treatment is particularly interesting to enable the deposition from solution of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) on top of the active layer of organic solar cells or photodetectors. However, oxygen is known to be detrimental to organic devices, as the active layer is very sensitive to oxygen and photo-oxidation. In this study, we aim to determine the impact of oxygen plasma surface treatment on the performance of organic photodetectors (OPD). We show a significant reduction of the sensitivity as well as a change in the shape of the external quantum efficiency (EQE) of the device. Using hole density and conductivity measurements, we demonstrate the p-doping of the active layer induced by oxygen plasma. Admittance spectroscopy shows the formation of trap states approximately 350 meV above the highest occupied molecular orbital of the active organic semiconductor layer. Numerical simulations are carried out to understand the impact of p-doping and traps on the electrical characteristics and performance of the OPDs., Full paper, figures and supporting information

In this study, we aim to improve our understanding of the doping mechanism involved in the polymer PBDTTT-c doped with(Mo(tfd-COCF3)3. We follow the evolution of the hole density with dopant concentration to highlight the limits of organic semiconductor doping. To enable the use of doping to enhance the performance of organic electronic devices, doping efficiency must be understood and improved. We report here a study using complementary optical and electrical characterization techniques, which sheds some light on the origin of this limited doping efficiency at high dopant concentration. Two doping mechanisms are considered, the direct charge transfer (DCT) and the charge transfer complex (CTC). We discuss the validity of the model involved as well as its impact on the doping efficiency., Comment: Accepted manuscript, J. Appl. Phys

Though peripheral halogen substitution is a known strategy to lower the lowest unoccupied (LUMO) and highest occupied (HOMO) molecular orbital energy levels of planar molecular semiconductors, this strategy has not been explored in conformationally contorted systems. We demonstrate that substitution of peripheral hydrogens with fluorine and chlorine can effectively lower the energy levels of contorted hexabenzocoronene (cHBC) despite its nonplanar conformation. The HOMO energy level lowers comparably with fluorine and chlorine substitution. Due to chlorine’s ability to accommodate more electron density than fluorine, chlorination lowers the LUMO energy level more effectively compared to fluorination (31–60 meV/F versus 53–83 meV/Cl), resulting in a narrowing of the optical bandgap. We find the preference for electron transport to increase with increasing halogenation of cHBC. As an example, thin-film transistors fabricated with 8F-8Cl-cHBC demonstrated electron mobilities as high as 10–2 cm2/(V s) and sol...

We report on investigations of the stability of inverted organic solar cells with ZnO electron collecting interlayer that are solution-processed from zinc acetate (ZnAc) or diethylzinc (deZn) precursors. Characterization of the respective solar cells suggests that the two materials initially function similarly in devices, however, we find that devices with ZnO from the deZn precursor are more stable under long-term illumination and load than devices with ZnO from the ZnAc precursor. A dipolar phosphonic acid that reduces the ZnO work function also improved device performance and stability when compared with unmodified ZnAc-based ZnO, but was problematic for deZn-based ZnO. The long-term device degradation analyses shows that the improved devices had increased and significantly more stable open-circuit voltage and fill factor characteristics. Chemical analyses suggests that defects in the ZnO films, most likely interstitial zinc, may be responsible for the observed disparities in stability within organic solar cells.

Chemical doping of organic semiconductors using molecular dopants plays a key role in the fabrication of efficient organic electronic devices. Although a variety of stable molecular p-dopants have been developed and successfully deployed in devices in the past decade, air-stable molecular n-dopants suitable for materials with low electron affinity are still elusive. Here we demonstrate that photo-activation of a cleavable air-stable dimeric dopant can result in kinetically stable and efficient n-doping of host semiconductors, whose reduction potentials are beyond the thermodynamic reach of the dimer’s effective reducing strength. Electron-transport layers doped in this manner are used to fabricate high-efficiency organic light-emitting diodes. Our strategy thus enables a new paradigm for using air-stable molecular dopants to improve conductivity in, and provide ohmic contacts to, organic semiconductors with very low electron affinity. The activation of cleavable organometallic dimers upon exposure to ultraviolet radiation allows air-stable n-type doping of organic materials with electron affinity lower than the expected thermodynamic reducing strength of the dimers.

The interfacial electronic structure between oxide thin films and organic semiconductors remains a key parameter for optimum functionality and performance of next-generation organic/hybrid electronics. By tailoring defect concentrations in transparent conductive ZnO films, we demonstrate the importance of controlling the electron transfer barrier at the interface with organic acceptor molecules such as C60. A combination of electron spectroscopy, density functional theory computations, and device characterization is used to determine band alignment and electron injection barriers. Extensive experimental and first principles calculations reveal the controllable formation of hybridized interface states and charge transfer between shallow donor defects in the oxide layer and the molecular adsorbate. Importantly, it is shown that removal of shallow donor intragap states causes a larger barrier for electron injection. Thus, hybrid interface states constitute an important gateway for nearly barrier-free charge carrier injection. These findings open new avenues to understand and tailor interfaces between organic semiconductors and transparent oxides, of critical importance for novel optoelectronic devices and applications in energy-conversion and sensor technologies.

At metal/organic interfaces, the insertion of an or- ganic monolayer can significantly modify the surface proper- ties of the substrate, especially in terms of charge injection across the interface. Herein, we study the formation of an insulating monolayer of morpholine or amine-functionalized polystyrene on Al(111) and Au(111) surfaces and its impact on surface work-function and charge injection. First-princi- ples calculations based on Density Functional Theory have been carried out and point to a significant decrease in the work-function of modified metal surfaces; this is in very good agreement with ultraviolet photoemission spectrosco- py measurements performed on the Au(111) surface. In ad- dition, a bilayer cathode, consisting of a thin film of high- work-function metal, such as Al and Au, and a layer of amine-functionalized polystyrene, was also fabricated and tested in organic light-emitting diodes. Such bilayer struc- tures exhibit substantially enhanced efficiency when com- pared with controls without the functionalized polymers. Our combined theoretical and experimental investigation gives insight into how a thin layer of a commodity polymer can be used to transform rather high-work-function metals into high-performance cathodes to provide efficient electron injection.

A spin-cast method is presented for the formation of phosphonic acid functionalized small molecule layers on solution-processed ZnO substrates for use as electron collecting interlayers in organic photovoltaics. Phosphonic acid interlayers modify the ZnO work function and the charge carrier injection barrier at its interface, resulting in systematic control of V OC in inverted bulk heterojunction solar cells. Surface modification is shown to moderate the need for UV light-soaking of the ZnO contact layers. Lifetime studies (30 days) indicate stable and improved OPV performance over the unmodified ZnO contact, which show significant increases in charge extraction barriers and series resistance. Results suggest that enhanced stability using small molecule modifiers is due to partial passivation of the oxide surface to molecular oxygen adsorption. Surface passivation while maintaining work function control of a selective interlayer can be employed to improve net efficiency and lifetime of organic photovoltaic devices. The modified cathode work function modulates V OC via static energetic barriers and modulates contact conductivity by creating reversible and irreversible S-shape current-voltage characteristics as a result of kinetic barriers to charge transport.

Combined photoemission and charge-transport property studies of the organic hole transport material 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-MeOTAD) under air exposure and controlled environments of O2, H2O + N2, and N2 (1 atm and under dark conditions) reveal the incorporation of gas molecules causing a decrease in charge mobility. Ultraviolet photoelectron spectroscopy shows the Fermi level shifts toward the highest occupied molecular orbital of spiro-MeOTAD when exposed to air, O2, and H2O resembling p-type doping. However, no traces of oxidized spiro-MeOTAD(+) are observed by X-ray photoelectron spectroscopy (XPS) and UV-visible spectroscopy. The charge-transport properties were investigated by fabricating organic field-effect transistors with the 10 nm active layer at the semiconductor-insulator interface exposed to different gases. The hole mobility decreases substantially upon exposure to air, O2, and H2O. In the case of N2, XPS reveals the incorporation of N2 molecules into the film, but the decrease in the hole mobility is much smaller.

Poly(3-hexylthiophene) (P3HT) is p-doped by the new soluble dopant molybdenum tris[1-(methoxycarbonyl)-2-(trifluoromethyl)-ethane-1,2-dithiolene] and investigated via photoemission spectroscopy and transport measurements. Soft-contact transfer lamination of thin layers of the doped P3HT on undoped polymer layers is used to create spatially-confined doped regions, which serve as hole-injection contacts on P3HT diodes. This strategy is then used to create efficient hole-collecting contacts on solution-processed inverted polymer solar cells.

The electronic structure of a bi-layer hole extraction contact consisting of nickel oxide (NiO x ) and molybdenum trioxide (MoO 3 ) is determined via ultraviolet and X-ray photoemission spectroscopy. The bi-layer presents ideal energetics for the extraction of holes and suppression of carrier recombination at the interface. The application of the NiO x /MoO 3 bi-layer as the anode of organic bulk heterojunction solar cells based on PCDTBT/PC 71 BM leads to improved device performance, which is explained by an intricate charge transfer process across the interface.

The discovery of air-stable n-dopants for organic semiconductor materials has been hindered by the necessity of high-energy HOMOs and the air sensitivity of compounds that satisfy this requirement. One strategy for circumventing this problem is to utilize stable precursor molecules that form the active doping complex in situ during the doping process or in a postdeposition thermal- or photo-activation step. Some of us have reported on the use of 1H-benzimidazole (DMBI) and benzimidazolium (DMBI-I) salts as solution- and vacuum-processable n-type dopant precursors, respectively. It was initially suggested that DMBI dopants function as single-electron radical donors wherein the active doping species, the imidazoline radical, is generated in a postdeposition thermal annealing step. Herein we report the results of extensive mechanistic studies on DMBI-doped fullerenes, the results of which suggest a more complicated doping mechanism is operative. Specifically, a reaction between the dopant and host that begins with either hydride or hydrogen atom transfer and which ultimately leads to the formation of host radical anions is responsible for the doping effect. The results of this research will be useful for identifying applications of current organic n-doping technology and will drive the design of next-generation n-type dopants that are air stable and capable of doping low-electron-affinity host materials in organic devices.

A combination of density functional theory and experimental measurements via ultraviolet and X-ray photoelectron spectroscopies is used to explore the nature of the interface between the stoichiometric molybdenum trioxide (MoO3) or its under-stoichiometric counterpart with oxygen vacancies, and an organic hole-transport layer represented by 4,4′-N,N′-dicarbazole-biphenyl (CBP). Upon adsorption of CBP, special attention is paid to i) the appearance of gap states and the reduction of the molybdenum oxide surface, and ii) the evolution of the work function. Very good agreement is found between theory and experiment. The near alignment of the CBP highest occupied molecular orbital with the Fermi level and the conduction band edge of molybdenum oxide points to facile hole collection or injection.

The formation of interfacial midgap states due to the reduction of buckminsterfullerene (C60) to amorphous carbon upon subsequent vapor deposition of Al is confirmed using Raman spectroscopy and X-ray, ultraviolet, and inverse photoemission spectroscopies. We demonstrate that vapor deposition of Al results in n-type doping of C60 due to an electron transfer from Al to the LUMO of C60, resulting in the formation of midgap states near the C60 Fermi level. Raman spectroscopy in ultrahigh vacuum clearly identifies the presence of the C60 anion radical (C60(•-)) as well as amorphous carbon created by further degradation of C60(•-). In contrast, the interface formed by vapor deposition of Ag shows only a slight Ag/C60 interfacial charge displacement with no evidence for complete metal-to-C60 electron transfer to form the anion radical or its further degradation products. These results confirm previous speculations of metal-induced chemical damage of C60 films after Al deposition, which is widely suspected of decreasing charge collection efficiency in OPVs, and provide key insight into charge collection at metal/organic interfaces in such devices.

The first example of systematic control of the work function of a conducting polymer is illustrated for PEDOT:PSS. A nanometer-thick film of TiO 2 is formed on the PEDOT:PSS surface and forms an adhesion layer to bond phosphonic acids to the polymer; the work function of the PEDOT:PSS ( Φ PEDOT:PSS ) is adjusted by choice of phosphonic acid over a range of approximately 0.8 eV, and Δ Φ PEDOT:PSS correlates strongly with the calculated gas-phase dipole moments of the phosphonates.

Soft contact lamination, whereby films prepared separately from solution are brought into contact to form a single device, was used here to form homojunctions comprising two identical layers of poly(3-hexylthiophene) (P3HT) or two layers of poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1′-3}-thiadiazole)] (F8BT). Using ultraviolet photoemission spectroscopy (UPS), Kelvin Probe Force Microscopy (KPFM), and current–voltage (I–V) measurements, the electronic structure of, and carrier transport across, these homojunctions were investigated. UPS and KPFM show that lamination does not introduce any significant offset in the molecular levels across the interface. The I–V characteristics confirm this result by showing that transport across the film is largely unaffected by the presence of the laminated interface. This important result means that lamination could become a versatile tool for constructing multi-layer polymer devices.

A Sturdy Electrode Coating To operate efficiently, organic devices—such as light-emitting diodes—require electrodes that emit or take up electrons at low applied voltages (that is, have low work functions). Often these electrodes are metals, such as calcium, that are not stable in air or water vapor and have to be protected from environmental damage. Zhou et al. (p. 327 ; see the Perspective by Helander ) report that a coating polymer containing aliphatic amine groups can lower the work functions of various types of electrodes by up to 1.7 electron volts and can be used in a variety of devices.

Air-stable dimers of sandwich compounds including rhodocene and (pentamethylcyclopentadienyl)(arene)ruthenium and iron derivatives can be used for n-doping electron-transport materials with electron affinities as small as 2.8 eV. A p-i-n homojunction diode based on copper phthalocyanine and using rhodocene dimer as n-dopant shows a rectification ratio of greater than 10(6) at 4 V.

Contrary to polymer solar cells with bulk-heterojunction active layers, devices with planar-heterojunction active layers allow the decoupling of active layer phase separation from constituent crystallization, and their relative influence on device performance. We fabricated planar-heterojunction devices by first processing the electron donor and electron acceptor in isolation; they were subsequently laminated across the donor–acceptor interface to establish electrical contact. Thermal annealing was intentionally avoided after lamination to maintain the pristine charge transfer interface. Lamination thus obviates the need for solvent orthogonality; more importantly, it provides independent process tuning of individual organic semiconductor layers, ultimately allowing control over constituent structural development. We found the short-circuit current density of planar-heterojunction solar cells comprising poly(3-hexyl thiophene), P3HT, and [6,6]-phenyl-C61-butyric acid methyl ester, PCBM, as the electron donor and acceptor, respectively, to be generally independent of the annealing history of P3HT. On the contrary, thermal annealing PCBM prior to lamination mainly led to a reduction in short-circuit current density. This deterioration is correlated with the development of preferentially oriented PCBM crystals that hinders electron transport in the vertical direction.

The characterization and implementation of solution-processed, wide bandgap nickel oxide (NiOx) hole-selective interlayer materials used in bulk-heterojunction (BHJ) organic photovoltaics (OPVs) are discussed. The surface electrical properties and charge selectivity of these thin films are strongly dependent upon the surface chemistry, band edge energies, and midgap state concentrations, as dictated by the ambient conditions and film pretreatments. Surface states were correlated with standards for nickel oxide, hydroxide, and oxyhydroxide components, as determined using monochromatic X-ray photoelectron spectroscopy. Ultraviolet and inverse photoemission spectroscopy measurements show changes in the surface chemistries directly impact the valence band energies. O2-plasma treatment of the as-deposited NiOx films was found to introduce the dipolar surface species nickel oxyhydroxide (NiOOH), rather than the p-dopant Ni2O3, resulting in an increase of the electrical band gap energy for the near-surface regio...

For large-scale and high-throughput production of organic solar cells (OSCs), liquid processing of the functional layers is desired. We demonstrate inverted bulk-heterojunction organic solar cells (OSCs) with a sol–gel derived V 2 O 5 hole-extraction-layer on top of the active organic layer. The V 2 O 5 layers are prepared in ambient air using Vanadium(V)-oxitriisopropoxide as precursor. Without any post-annealing or plasma treatment, a high work function of the V 2 O 5 layers is confi rmed by both Kelvin probe analysis and ultraviolet photoelectron spectroscopy (UPS). Using UPS and inverse photoelectron spectroscopy (IPES), we show that the electronic structure of the solution processed V 2 O 5 layers is similar to that of thermally evaporated V 2 O 5 layers which have been exposed to ambient air. Optimization of the sol gel process leads to inverted OSCs with solution based V 2 O 5 layers that show power conversion effi ciencies similar to that of control devices with V 2 O 5 layers prepared in high-vacuum.

A new hexaazatriphenylene (HAT) derivative formed by the fusion of three HAT units has been prepared and its electronic and molecular structures have been fully characterized by optical and vibrational Raman spectroscopy, electrochemistry, solid-state UV and inverse photoemission spectroscopy (UPS and IPES), and by quantum-chemical calculations. A comparative HAT versus tri-HAT study was performed. The fusion of three HAT molecules causes modifications in the optical and electrochemical properties consistent with enhanced π-electron delocalization attained in a bigger planar core. Such combined experimental and theoretical studies are useful to balance chemical design with supramolecular engineering directed to find enhanced characteristics for new organic semiconductor applications.

We show enhanced efficiency and stability of a high performance organic solar cell (OPV) when the work-function of the hole collecting indium-tin oxide (ITO) contact, modified with a solution-processed nickel oxide (NiOx) hole-transport layer (HTL), is matched to the ionization potential of the donor material in a bulk-heterojunction solar cell. Addition of the NiOx HTL to the hole collecting contact results in a power conversion efficiency (PCE) of 6.7%, which is a 17.3% net increase in performance over the 5.7% PCE achieved with a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL on ITO. The impact of these NiOx films is evaluated through optical and electronic measurements as well as device modeling. The valence and conduction band energies for the NiOx HTL are characterized in detail through photoelectron spectroscopy studies while spectroscopic ellipsometry is used to characterize the optical properties. Oxygen plasma treatment of the NiOx HTL is shown to provide superior contact properties by increasing the ITO/NiOx contact work-function by 500 meV. Enhancement of device performance is attributed to reduction of the band edge energy offset at the ITO/NiOx interface with the poly(N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothidiazole) (PCDTBT):[6,6]-phenyl-C61 butyric acid methyl ester PCBM and [6,6]-phenyl-C71 butyric acid methyl ester (PC70BM) active layer. A high work-function hole collecting contact is therefore the appropriate choice for high ionization potential donor materials in order to maximize OPV performance.

In this work we demonstrate that the room-temperature deposition of the organic molecule 9,10-phenanthrenequinone (PQ) reduces the surface defect density of the silicon (100) surface by chemically bonding to the surface dangling bonds. Using various spectroscopic measurements we have investigated the electronic structure and band alignment properties of the PQ/Si interface. The band-bending at the PQ-passivated silicon surface is negligible for both n- and p-type substrates, demonstrating a low density of surface defects. Finally we show that PQ forms a semiconducting wide-bandgap type-I heterojunction with silicon.

The ability to reverse the composition profile of active layers by delaminating and transferring P3HT:PCBM thin films has allowed us to probe directly the sole influence of interfacial segregation on solar cell device characteristics on the same device platform.

Molecular energy-level alignment around the Fermi level in self-assembled monolayers of E-stilbene-4-thiolate (SAM1), E-4′-(ethoxy)stilbene-4-thiolate (SAM2), and E-4′-(dimethylamino)stilbene-4-thiolate (SAM3) on Au(111) was studied by ultraviolet photoelectron spectroscopy. A comparison of the measured hole-injection barriers into SAM1−3 with the electrochemically estimated molecular ionization energies reveals that the influence of the 4′-substituent in the stilbene backbone on the hole-injection barrier is greatly suppressed. While predicted theoretically for a variety of densely packed π-conjugated thiolate monolayers before, we here provide conclusive experimental evidence for this phenomenon. The obtained results are compared to periodic density-functional theory calculations and are discussed in the light of electrostatic properties of dipolar monolayers.