1. Electrical and Reliability Characteristics of FinFETs With High-k Gate Stack and Plasma Treatments
- Author
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Hsin-Kai Fang, Chin-Hsiu Huang, Zi-Qin Hong, Shang-Fu Tsai, Chen-Chien Li, Cheng-Yuan Li, Yan-Lin Li, and Kuei-Shu Chang-Liao
- Subjects
010302 applied physics ,Materials science ,business.industry ,Gate dielectric ,Oxide ,Plasma ,Dielectric ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,Reliability (semiconductor) ,chemistry ,Logic gate ,0103 physical sciences ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Leakage (electronics) ,High-κ dielectric - Abstract
Effects of high- ${k}$ gate stacks and plasma treatments on electrical and reliability characteristics of FinFET were comprehensively studied in this work. A higher ON-current, higher ON-/OFF-current ratio, smaller subthreshold swing (S.S.), lower gate leakage current, and better reliability characteristics in FinFETs are simultaneously achieved by a HfO2/ZrO2/HfO2 gate stack. The improvement can be attributed to its higher ${k}$ -value, fewer oxide traps, and oxygen vacancy in gate stack. A higher ON-current of FinFET can be obtained with an F-based plasma treatment, which, however, also induces a larger gate leakage current. A plasma treatment with F- and N-based ambient on gate stack is shown to obtain a higher ON-current and acceptable gate leakage in FinFET. Furthermore, a larger ON-current, higher ON-/ OFF-current ratio, and a smaller S.S. in FinFET can be achieved with a TiO2 stacked gate dielectric.
- Published
- 2021
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