1. Influence of oxygen flow ratio on the oxidation of Ti target and the formation process of TiO_2 films by reactive sputtering
- Author
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Yoshio Abe, K. Takamura, and Katsutaka Sasaki
- Subjects
Materials science ,Metallurgy ,Analytical chemistry ,Oxide ,chemistry.chemical_element ,Plasma ,Condensed Matter Physics ,Oxygen ,Surfaces, Coatings and Films ,Flow ratio ,chemistry.chemical_compound ,chemistry ,Sputtering ,Getter ,Oxygen delivery ,ComputingMethodologies_DOCUMENTANDTEXTPROCESSING ,Molecule ,Instrumentation - Abstract
Ti and TiO_2 films were deposited by RF reactive sputtering using a mixed gas of Ar and O_2. TiO_2 films were found to be formed at oxygen flow ratios above 7%. At the critical O_2 flow ratio, the amount of supplied Ti atoms was found to agree with that of O_2 molecules. Above the critical O_2 flow ratio, the amount of supplied O_2 molecules exceeded the gettering effect of the sputtering Ti atoms and oxygen density in the plasma began to increase. As a result, the surface of the Ti target was oxidized and TiO_2 films were formed. The thickness of the oxide film formed on the Ti target increased with increasing oxygen flow ratio and a maximum thickness of 5-6 nm was obtained at oxygen flow ratios of 40-100%., application/pdf
- Published
- 2004