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It is challenging to develop a material that combines good mechanical properties and high translucency since these properties are generally not coincident in one material. In this study, we prepared ZrO2-SiO2 nanocrystalline glass-ceramics that combines the above two types of properties. Raw powder with 55 mol%, 65 mol%, and 75 mol% ZrO2 and each with 5 mol% yttrium as a dopant was prepared by sol-gel method, followed by spark plasma sintering to obtain dense glass-ceramics. XRD results demonstrated that the glass-ceramics with 65 mol% and 75 mol% ZrO2 were composed of tetragonal-ZrO2, whereas, that with 55 mol% ZrO2 was composed of cubic-ZrO2. The as-sintered glass-ceramics showed black/brown discoloration, but they obtained high translucency after thermal treatment. X-ray energy-dispersive spectrometry (EDS) results in scanning electron transmission microscopy (STEM) mode demonstrated yttrium dopants were predominately distributed in ZrO2 nanocrystallites. The glass-ceramics with 65 mol% ZrO2 had the highest flexural strength, achieving an average value of 673 MPa. The glass-ceramics with different compositions sintered at different temperatures showed fracture toughness values ranging from 5.25 MPa m1/2 to 6.69 MPa m1/2. The strong and translucent ZrO2-SiO2 nanocrystalline glass-ceramics showing great protentional to be used in many fields.

Dentin hypersensitivity can be reduced by the use of a remineralization agent to hinder movement of fluids within the dentin tubules. Penetration of particles into the tubules and a continuous release of Ca2+ and phosphate ions can induce the mineralization of a material mimicking the mineral component of dentin, sealing the tubules. In this work, we have used complementary electron microscopy techniques to investigate the ultrastructure of dentin and crystallization and occlusion effects when using amorphous calcium magnesium phosphate (ACMP) microspheres on extracted human molars. Application of the particles in a gel intended for at-home use resulted in intra-tubular mineralization of a carbonate substituted hydroxyapatite (HA). Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) showed that crystallization was initiated on the peritubular dentin (PTD) with undirected crystal growth leading to the formation of a porous material. We additionally investigated the effects from using a fluoride toothpaste to potentially improve the remineralization and anti-cariogenic properties of the ACMP microspheres. Energy dispersive x-ray spectroscopy (EDX) using TEM in scanning mode (STEM) showed that fluoride incorporation resulted in an increase in aspect ratio of the crystals, crystal growth directed towards the center of the tubule lumen and densification of the mineralized material. Thus, ACMP microspheres are promising alternatives as occluding agents and the efficacy of the particles could be further improved with the complementary use of a fluoride toothpaste.

Tungsten (W)-based materials attract significant attention due to their superior mechanical properties. Here, we present a chemical approach based on the addition of carbon (C) for increased strength via the combination of three strengthening mechanisms in W thin films. W:C thin films with C concentrations up to ~4 at.% were deposited by magnetron sputtering. All films exhibit a body-centred-cubic structure with strong texture and columnar growth behaviour. X-ray and electron diffraction measurements suggest the formation of supersaturated W:C solid solution phases. The addition of C reduced the average column width from ~133 nm for W to ~20 nm for the film containing ~4 at.% C. The column refinement is explained by a mechanism where C acts as re-nucleation sites. The W film is ~13 GPa hard, while the W:C films achieve a peak hardness of ~24 GPa. The W:C films are ~11 GPa harder than the W film, which is explained by a combination of grain refinement strengthening, solid solution strengthening and increased dislocation density. Additional micropillar compression tests showed that the flow stress increased upon C addition, from ~3.8 to ~8.3 GPa and no brittle fracture was observed., Materials & Design, 208, ISSN:0264-1275, ISSN:1873-4197

Complex compound semiconductors, such as the emerging solar cell material Cu2ZnSn(S,Se)4 (CZTS), present major experimental challenges in terms of understanding and controlling growth processes and defect formation. This study aims to shed light upon the complicated interplay of the synthesis conditions and CZTS thin film properties. Composition-spread thin films are fabricated in different atmospheric conditions during the annealing step. The span of the single-phase region is identified by a phase analysis combining XRD and Raman mapping. The phase characterisation is strengthened by STEM-EDX analysis. Our results show that the stability of the CZTS phase is strongly affected by the process conditions which is observed as a shift in the secondary phase boundaries and different levels of maximum cation ordering achieved in the different samples. With regard to the photoluminescence intensity, all investigated samples show the same trends: regions with Cu3SnS4 secondary phase show the lowest intensity, while the presence of SnSx secondary phases greatly enhances the photoluminescence intensity. The single-phase region features an overall low photoluminescence intensity without a remarkable composition dependence and we propose the presence of deep defects in absence of secondary phases that limit the radiative recombination. We discuss implications for future efforts in defect engineering toward improving the efficiency of CZTS thin film devices.

We report an efficient one-step method to achieve highly reduced graphene oxide (rGO) hydrogel doped with nitrogen where the rGO sheets are interconnected forming a porous structure by means of hyd ...

Surface sulfurization of Cu(In,Ga)Se2 (CIGSe) absorbers is a commonly applied technique to improve the conversion efficiency of the corresponding solar cells, via increasing the bandgap towards the heterojunction. However, the resulting device performance is understood to be highly dependent on the thermodynamic stability of the chalcogenide structure at the upper region of the absorber. The present investigation provides a high-resolution chemical analysis, using energy dispersive X-ray spectrometry and laser-pulsed atom probe tomography, to determine the sulfur incorporation and chemical re-distribution in the absorber material. The post-sulfurization treatment was performed by exposing the CIGSe surface to elemental sulfur vapor for 20 min at 500°C. Two distinct sulfur-rich phases were found at the surface of the absorber exhibiting a layered structure showing In-rich and Ga-rich zones, respectively. Furthermore, sulfur atoms were found to segregate at the absorber grain boundaries showing concentrations up to ~7 at% with traces of diffusion outwards into the grain interior.

Li- and Mn-rich layered oxides show significant promise as electrode materials for future Li-ion batteries. However, an accurate description of its crystallography remains elusive, with both single-phase solid solution and multiphase structures being proposed for high performing materials such as Li1.2Mn0.54Ni0.13Co0.13O2. Herein, we report the synthesis of single- and multiphase variants of this material through sol-gel and solid-state methods, respectively, and demonstrate that its crystallography is a direct consequence of the synthetic route and not necessarily an inherent property of the composition, as previously argued. This was accomplished via complementary techniques that probe the bulk and local structure followed by in situ methods to map the synthetic progression. As the electrochemical performance and anionic redox behavior are often rationalized on the basis of the presumed crystal structure, clarifying the structural ambiguities is an important step toward harnessing its potential as an electrode material.

This study explores carbon addition as a materials design approach for simultaneously improving the hardness, crack resistance, and corrosion resistance of high entropy thin films. CoCrFeMnNi was selected as a starting point, due to its high concentration of weak carbide formers. The suppression of carbides is crucial to the approach, as carbide formation can decrease both ductility and corrosion resistance. Films with 0, 6, and 11 at.% C were deposited by magnetron co-sputtering, using a graphite target and a sintered compound target. The samples with 0 at.% C crystallized with a mixture of a cubic closed packed (ccp) phase and the intermetallic χ-phase. With 6 and 11 at.% C, the films were amorphous and homogenous down to the nm-scale. The hardness of the films increased from 8 GPa in the carbon-free film to 16 GPa in the film with 11 at.% C. Furthermore, the carbon significantly improved the crack resistance as shown in fragmentation tests, where the crack density was strongly reduced. The changes in mechanical properties were primarily attributed to the shift from crystalline to amorphous. Lastly, the carbon improved the corrosion resistance by a progressive lowering of the corrosion current and the passive current with increasing carbon concentration.

Hydrogen‐doped In2O3 (IOH) films are used as a transparent back contact in bifacial Cu(In,Ga)Se2 (CIGS) solar cells. The effect of the IOH thickness and the impact of the sodium incorporation techn ...

This study evaluates the potential of hydrogen‐doped In2O3 (IOH) as a transparent back contact material in (Agy,Cu1‐y)(In1‐x,Gax)Se2 solar cells. It is found that the presence of Na promotes the cr ...

Tandem solar cells based on hybrid organic-inorganic metal halide perovskites have reached efficiencies up to 28%, but major concerns for long-term stability and the presence of Pb have raised interest in searching for fully earth-abundant, intrinsic chemically stable, and nontoxic alternatives. With a direct band gap around 1.8 eV and stability in air up to at least 500 degrees C, BaZrS3 is a promising candidate. This work presents the first approach of synthesizing a thin film of such compound by sputtering at ambient temperature with a subsequent rapid thermal process. Despite the short fabrication time, the width of the XRD diffraction peaks and the energy and distribution of the photoluminescence response show comparable crystalline quality to that from bulk synthesis methods. Good crystallization required around 900 degrees C. Such a high temperature could be incompatible with fabrication of tandem solar cells.

Ge nanoparticles embedded in thin films have attracted a lot of attention due to their promising optical and electronic properties that can be tuned by varying the particle size and choice of matrix material. In this study, Ge nanoparticle formation was investigated for Al-Ge-N based thin films by simultaneous measurements of HAXPES and grazing incidence XRD during in situ annealing in vacuum conditions. As-deposited Al-Ge-N thin films, synthesized by reactive dc magnetron sputtering, consisted of a nanocrystalline (Al1-xGex)Ny solid solution and an amorphous tissue phase of Ge3Ny. Upon annealing to 750 °C, elemental Ge was formed shown by both HAXPES and XRD measurements, and N2 gas was released as measured by a mass spectrometer. Postannealed ex situ analysis by SEM and TEM showed that the elemental Ge phase formed spherical nanoparticles on the surface of the film, with an average size of 210 nm. As the annealing temperature increased further to 850 °C, the Ge particles on the film surface evaporated, while the phase segregation of Ge still could be observed within the film. Thus, these results show the possibility for a controlled synthesis of Ge nanoparticles through annealing of Al-Ge-N thin films to produce materials suitable for use in electronic or optoelectronic devices.

Two different Li-rich nickel–cobalt–manganese-oxide (Li-rich NCM) active materials with the same nominal composition 0.5Li2MnO3:0.5Li(Ni1/3Co1/3Mn1/3)O2 but different pristine nano structure have been analyzed structurally and electrochemically in different cycling states. For structural characterization, transmission electron microscopy (TEM) and high resolution synchrotron powder diffraction (S-XRD) experiments were conducted. The changes in structure with increasing cycle number are correlated with characteristic features in the corresponding electrochemical dQ/dV-profiles that were obtained by galvanostatically cycling the two different active materials. The presented data demonstrates that structural changes upon cycling, e.g. LiMnO2 and spinel formation, strongly depend on the degree oxygen is involved in the reversible charge compensation for delithiation/lithiation. According to our data, firstly a twin-like environment with nanometer dimensions is formed within the R-3m matrix during the initial cycle, which then gradually transforms into a spinel-like structure with increasing cycle number. As another result, we can show that Li2MnO3 to LiMnO2 transformation is not directly dependent in the irreversible oxygen loss in the first cycle but more importantly on transition metal migration. A model is presented explaining the dependency of LiMnO2 and spinel formation on the ability of Li-rich active materials to include oxygen in the charge compensation process.

A wide range of applications benefit from transparent semiconducting oxides with tunable electronic properties, for example, electron transport layers in solar cell devices, where the electron affinity is a key parameter. Presently, a few different ternary oxides are used for this purpose, but the attainable electron affinity range is typically limited. In this study, the authors develop a low-temperature atomic layer deposition (ALD) process to grow amorphous Sn1-xGaxOy thin films from dimethylamino-metal complexes and water. This oxide is predicted to provide a wide selection of possible electron affinity values, from around 3 eV for pure Ga2O3 to 4.5 eV for pure SnO2. The ALD process is evaluated for deposition temperatures in the range of 105-195 degrees C by in situ quartz crystal microbalance and with ex situ film characterization. The growth exhibits an ideal-like behavior at 175 degrees C, where the film composition can be predicted by a simple rule of mixture. Depending on film composition, the growth per cycle varies in the range of 0.6-0.8 angstrom at this temperature. Furthermore, the film composition for a given process appears insensitive to the deposition temperature. From material characterization, it is shown that the deposited films are highly resistive, fully amorphous, and homogeneous, with moderate levels of impurities (carbon, nitrogen, and hydrogen). By tailoring the metal cation ratio in films grown at 175 degrees C, the optical bandgap can be varied in the range from 2.7 eV for SnO2 to above 4.2 eV for Ga2O3. The bandgap also varies significantly as a function of deposition temperature. This control of properties indicates that Sn1-xGaxOy is a promising candidate for an electron transport layer material in a wide electron affinity range. Published by the AVS.

Cu2ZnSnS4(CZTS) thin-film solar cell absorbers with different bandgaps can be produced by parameter variation during thermal treatments. Here, the effects of varied annealing time in a sulfur atmosphere and an ordering treatment of the absorber are compared. Chemical changes in the surface due to ordering are examined, and a downshift of the valence band edge is observed. With the goal to obtain different band alignments, these CZTS absorbers are combined with Zn1−xSnxOy (ZTO) or CdS buffer layers to produce complete devices. A high open circuit voltage of 809 mV is obtained for an ordered CZTS absorber with CdS buffer layer, while a 9.7% device is obtained utilizing a Cd free ZTO buffer layer. The best performing devices are produced with a very rapid 1 min sulfurization, resulting in very small grains.

Structural and electrochemical (EC) data of five different xLi 2 MnO 3 :(1-x)Li(Ni 1/3 Co 1/3 Mn 1/3 )O 2 cathode ceramics are presented. The aim of this work is to highlight the nano structure of this material class, next to the choice of right composition, as the key to anomalously high discharge capacities > 250 mAhg −1 . Therefore, the pristine nano composite structure of five different samples has been analyzed extensively by transition electron microscopy with respect to Li 2 MnO 3 domain size, shape and dispersion. DIFFaX simulations and Rietveld refinements to synchrotron X-Ray diffraction patterns are used to confirm the TEM results with a statistically reliable bulk method. The EC characteristics of the first cycle have been evaluated with respect to an EC active Li 2 MnO 3 component. By comparing the EC features of materials with x = 0.3, x = 0.5 and x = 0.7, it is evident that a composition of x = 0.5 is the most promising. To point out the impact of the pristine nano structure on the EC performance, three samples with x = 0.5 but considerable different nano domain arrangement, are compared. A strong influence has been found, with the highest discharge capacities for nano composites with small and evenly dispersed Li 2 MnO 3 domains.

SnP2O7 was prepared by a sol-gel route. The structural changes of tin pyrophosphate during the electrochemical lithiation were followed by using in situ XRD measurements that reveal the existence of a crystalline phase at the beginning of the discharge process. Nevertheless, it becomes amorphous after the full discharge as a result of a conversion reaction leading to the formation of LixSny alloys. The electrochemical tests show a high capacity with high retention upon cycling. To better understand the reaction mechanism of SnP2O7 with Li, several techniques were applied, such as ex situ(119)Sn Mossbauer and ex situ(7)Li and (31)P NMR spectroscopies with which we can follow the changes in the local environment of each element during cycling.

It is investigated if the performance of Cu(In,Ga)Se-2 (CIGSe) solar cells produced by co-evaporation can be improved by surface sulfurization in a postdeposition treatment. The expected benefit would be the formation of a sulfur/selenium gradient resulting in reduced interface recombination and increased open-circuit voltage. In the conditions used here it was, however, found that the reaction of the CIGSe layer in a sulfur environment results in the formation of a CuInS2 (CIS) surface phase containing no or very little selenium and gallium. At the same time, a significant pile up of gallium was observed at the CIGSe/CIS boundary. This surface structure was formed for a wide range of annealing conditions investigated in this paper. Increasing the temperature or extending the time of the dwell stage had a similar effect on the material. The gallium enrichment and CIS surface layer widens the surface bandgap and therefore increases the open-circuit voltage. At the same time, the fill factor is reduced, since the interface layer acts as an electron barrier. Due to the balance of these effects, the conversion efficiency could not be improved.

The electrode material in all-vanadium redox flow batteries often consists of fibrous carbon felts. It is believed that surface functional groups such as carboxyl and hydroxyl groups, e.g. introduced by heat-treatment, increase the activity of the carbon electrodes due to a facilitated electron transfer. However, other properties of the carbon material have not been investigated in detail. In this paper, the structure of morphologically different carbon materials, such as graphite flakes, two carbon blacks and a carbon fiber material, was correlated with the electrochemical activity obtained by cyclic voltammetry in a three-electrode configuration in vanadyl sulfate solution. Furthermore, the respective carbon materials were heat-treated in air at 400 °C and the corresponding structural changes in sp2 carbon content and amount and kind of surface functional groups determined by NEXAFS analysis were correlated with the activity. Our work shows that the sp2 carbon content on the surface is an important parameter significantly affecting the activity. The results can be utilized to choose a suitable carbon powder material to impregnate the felts in order to increase their reactive surface area.

The influence of heat treatment in lead zirconate titanate Pb(Zr,Ti)O3 (PZT) ferroelectrics on the domain structure and strain behavior has been investigated. Temperature-induced changes in the domain configuration, for example, appearance of nanodomains within microdomains, were observed by in situ hot-stage transmission electron microscopy. During the transient post annealing state the strain behavior under electric field differed from that of the nonheat-treated ferroelectrics. Directly after cooling the difference was most pronounced and decreased as a function of time. The enhanced response to an electric field of 4 kV/mm resulted in qualitatively different effects on strain for PZT from the tetragonal side and from the rhombohedral side of the morphotropic phase boundary.

Herein, the effect of the initial copper content of co‐evaporated Cu(In1−x,Gax)Se2 (CIGS) absorber films on the impact of a post‐annealing step in elemental sulfur atmosphere is studied. The Cu con ...