1. Electronic and Structural Transitions of LaAlO3/SrTiO3 Heterostructure Driven by Polar Field‐Assisted Oxygen Vacancy Formation at the Surface
- Author
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Jinsol Seo, Taewon Min, Sangwoo Ryu, Jaekwang Lee, Sang Ho Oh, Chang-Beom Eom, Zhipeng Wang, Hyungwoo Lee, Kyung Mee Song, and Si-Young Choi
- Subjects
Materials science ,General Chemical Engineering ,Science ,Oxide ,General Physics and Astronomy ,Medicine (miscellaneous) ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,Biochemistry, Genetics and Molecular Biology (miscellaneous) ,chemistry.chemical_compound ,Scanning transmission electron microscopy ,General Materials Science ,Shallow donor ,Communication ,Doping ,General Engineering ,Correction ,Heterojunction ,LaAlO3/SrTiO3 ,oxygen vacancy ,STEM ,021001 nanoscience & nanotechnology ,antiferrodistortive rotation ,2D electron gas ,0104 chemical sciences ,chemistry ,Chemical physics ,Polar ,Density functional theory ,0210 nano-technology ,Fermi gas - Abstract
The origin of 2D electron gas (2DEG) at LaAlO3/SrTiO3 (LAO/STO) interfaces has remained highly controversial since its discovery. Various models are proposed, which include electronic reconstruction via surface‐to‐interface charge transfer and defect‐mediated doping involving cation intermixing or oxygen vacancy (V O) formation. It is shown that the polar field‐assisted V O formation at the LAO/STO surface plays critical roles in the 2DEG formation and concurrent structural transition. Comprehensive scanning transmission electron microscopy analyses, in conjunction with density functional theory calculations, demonstrate that V O forming at the LAO/STO surface above the critical thickness (t c) cancels the polar field by doping the interface with 2DEG. The antiferrodistortive (AFD) octahedral rotations in LAO, which are suppressed below the t c, evolve with the formation of V O above the t c. The present study reveals that local symmetry breaking and shallow donor behavior of V O induce the AFD rotations and relieve the electrical field by electron doping the oxide heterointerface., Comprehensive scanning transmission electron microscopy analyses, in conjunction with density functional theory calculations, demonstrate that oxygen vacancy forming at LaAlO3/SrTiO3 (001) surface above the critical thickness (t c) cancels the polar electric field by doping the interface with two‐dimensional electron gas. The antiferrodistortive octahedral rotations in LaAlO3, which are suppressed below t c, evolve with the formation of oxygen vacancy above t c.
- Published
- 2021