1. The effects of post-deposition ion-beam bombardment with oxygen on the Co surface in modifying the magnetic properties of Co thin films
- Author
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L Li, David L Cortie, J. van Lierop, H.-T. Liang, Ko-Wei Lin, Xu Li, Frank Klose, Po-Liang Liu, Philip W. T. Pong, and W.-C. Lo
- Subjects
Materials science ,Ion beam ,Oxide ,Analytical chemistry ,02 engineering and technology ,Coercivity ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,Magnetization ,Exchange bias ,chemistry ,X-ray photoelectron spectroscopy ,Transmission electron microscopy ,0103 physical sciences ,Physics::Accelerator Physics ,Electrical and Electronic Engineering ,Thin film ,010306 general physics ,0210 nano-technology - Abstract
Ion beam bombardment is a useful surface modification method in tailoring the microstructure and magnetic properties of ferromagnetic thin films. In this paper, Co thin films were bombarded by Ar+ ion beam with oxygen and then capped with Al (to prevent oxidation). The oxygen content was altered from 0 to 41% to investigate the ion-beam bombardment effect. An oxide layer containing Al2O3, Co3O4 and CoO was formed after the ion-beam bombardment with oxygen, as characterized by x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, selected area electron diffraction, and x-ray diffraction. Enhanced coercivities (Hc's) (from 4.14kA/m to 7.96kA/m) and loop squareness (Mr/Ms. from 0.5 to 0.8) was induced by pure Ar+ ion-beam bombardment that resulted in domain wall pinning due to bombardment-induced defects and Co spin reordering. Hc exhibited a strong dependence on the oxygen content in the ion beam, due to the nature of the cobalt oxide formation. Field cooling to 180K resulted in increased squareness (Mr/Ms.=0.9) and reduced Hc. The low-field magnetization measured during zero field and field cooling to further investigate the exchange bias magnetism identified an irreversibility temperature at 320K in a film treated by ion-beam bombardment with an O2/Ar ratio of 21%. Display Omitted Ion-beam sputtered Co layers were bombarded by ion beam with O2 and capped with Al.Ar+ ion-beam bombardment resulted in Co grain reorientation and enhanced coercivity.Ion-beam bombardment with O2 formed an oxide layer containing CoO, Co3O4 and Al2O3.Magnetic coercivity strongly relied on temperature and O2 content in the ion beam.Irreversibility temperature of 320K indicates CoO transition to antiferromagnetic.
- Published
- 2016
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