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The fields of photovoltaics, photodetection and light emission have seen tremendous activity in recent years with the advent of hybrid organic-inorganic perovskites. Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirements of transistors make them particularly vulnerable to surface contamination and defects rife in polycrystalline films and bulk single crystals. Here, we demonstrate a spatially-confined inverse temperature crystallization strategy which synthesizes micrometre-thin single crystals of methylammonium lead halide perovskites MAPbX3 (X = Cl, Br, I) with sub-nanometer surface roughness and very low surface contamination. These benefit the integration of MAPbX3 crystals into ambipolar transistors and yield record, room-temperature field-effect mobility up to 4.7 and 1.5 cm2 V−1 s−1 in p and n channel devices respectively, with 104 to 105 on-off ratio and low turn-on voltages. This work paves the way for integrating hybrid perovskite crystals into printed, flexible and transparent electronics., The methylammonium lead halide perovskites have shown excellent optoelectronic properties but the field-effect transistors are much less studied. Here Yu et al. synthesize micrometer-thin crystals of perovskites with low surface contamination and make ambipolar transistor devices with high mobilities.

We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on exfoliated flakes. FETs on CVD-grown material, however, exhibit clear ambipolar transport, which for MoS2 monolayers had not been reported previously. We exploit this property to estimate the bandgap {\Delta} of monolayer MoS2 directly from the device transfer curves and find {\Delta} $\approx$ 2.4-2.7 eV. In the ambipolar injection regime, we observe electroluminescence due to exciton recombination in MoS2, originating from the region close to the hole-injecting contact. Both the observed transport properties and the behavior of the electroluminescence can be consistently understood as due to the presence of defect states at an energy of 250-300 meV above the top of the valence band, acting as deep traps for holes. Our results are of technological relevance, as they show that devices with useful optoelectronic functionality can be realized on large-area MoS2 monolayers produced by controllable and scalable techniques.

We report clear room temperature ambipolar transport in ambient-air processed methylammonium lead iodide (MAPbI3) thin-film transistors (TFTs) with aluminum oxide gate-insulators and indium-zinc-oxide source/drain electrodes. The high ionicity of the MAPbI3 leads to p-type and n-type self-doping, and depending on the applied bias we show that simultaneous or selective transport of electrons and/or holes is possible in a single MAPbI3 TFT. The electron transport (n-type), however, is slightly more pronounced than the hole transport (p-type), and the respective channel resistances range from 5&ndash, 11 and 44&ndash, 55 M&Omega, /&mu, m. Both p-type and n-type TFTs show good on-state characteristics for low driving voltages. It is also shown here that the on-state current of the n-type and p-type TFTs is highest in the slightly PbI2-rich and MAI-rich films, respectively, suggesting controllable n-type or p-type transport by varying precursor ratio.

Oxygen permeation measurements were performed on dense symmetric samples of Ca0.5Sr0.5Ti0.6Fe0.15Mn0.25O3−δ and compared to CaTi0.6Fe0.15Mn0.25O3−δ in order to assess the influence of the perovskite lattice volume on oxygen permeation. Oxygen flux measurements were performed in the temperature range 700–1000 °C and as function of feed side pO2 from 10−2 to 1 bar, and at high pressures up to 4 bar with a pO2 of 3.36 bar. The O2 permeability of the Sr-doped sample was significantly lower than that of the Sr-free sample, amounting to 3.9×10−3 mL min−1 cm−1 at 900 °C for a feed side pO2 of 0.21 bar. The O2 permeability of CaTi0.6Fe0.15Mn0.25O3−δ shows little variation with increased feed side pressures and reaches 1.5×10−2 mL min−1 cm−1 at 900 °C for a feed side pO2 of 3.36 bar. This is approximately 1.5 times higher than the O2 permeability with a feed side pO2 of 0.21 bar. Furthermore, in order to assess the applicability of CaTi0.6Fe0.15Mn0.25O3−δ as an oxygen membrane material, creep tests were performed under compressive loads of 30 and 63 MPa, respectively, in air in the temperature range 700–1000 °C; the results indicate a high creep resistance for this class of materials. The measured O2 permeabilities and creep rates are compared with other state-of-the-art membrane materials and their performance for relevant applications is discussed in terms of chemical and mechanical stability.

N -channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source–drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO 2 gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10 −2 cm 2 /(V s) and 0.21 cm 2 /(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO 2 surfaces, and enhance the electron accumulation by applied gate voltages.

Bottom-contact n-channel OFETs basedon spin-coated films of N,N'-1H,1H-perfluorobutyl dicyanoperylenediimide (PDI-FCN(2)) exhibit a saturation-regime mobility of 0.15 cm(2) V(-1) s(-1) in vacuum and good air stability. These performances are attributed to the high crystallinity and to the edge-on orientation promoted by the thermal treatment, as showed by confocal laser microscopy.

Oxygen permeation measurements are performed on dense samples of CaTi 0.85 Fe 0.15 O 3− δ , CaTi 0.75 Fe 0.15 Mg 0.05 O 3− δ and CaTi 0.75 Fe 0.15 Mn 0.10 O 3− δ in combination with density functional theory (DFT) calculations and X-ray photoelectron spectroscopy (XPS) in order to assess Mg and Mn as dopants for improving the O 2 permeability of CaTi 1− x Fe x O 3− δ based oxygen separation membranes. The oxygen permeation measurements were carried out at temperatures ranging between 700 and 1000 °C with feed side oxygen partial pressures between 0.01 and 1 bar. The O 2 permeability was experimentally found to be highest for the Mn doped sample over the whole temperature range, reaching 4.2×10 −3 ml min −1 cm −1 at 900 °C and 0.21 bar O 2 in the feed which corresponds to a 40% increase over the Fe-doped sample and similar to reported values for x =0.2. While the O 2 permeability of the Mg doped sample was also higher than the Fe-doped sample, it approached that of the Fe-doped sample above 900 °C. According to the DFT calculations, Mn introduces electronic states within the band gap and will predominately exist in the effectively negative charge state, as indicated by XPS measurements. Mn may therefore improve the ionic and electronic conductivity of CTF based membranes. The results are discussed in terms of the limiting species for ambipolar transport and O 2 permeability, i.e., oxygen vacancies and electronic charge carriers.

The Seebeck coefficient of both electrons and holes in a family of ambipolar diketopyrrolopyrrole copolymers is investigated using field‐effect gated measurements. It is found that at high carrier concentrations the magnitude of the Seebeck coefficients is not strongly dependent on the molecular structure of the backbone within this family of polymers. Additionally, the Seebeck coefficients of electrons and holes have very similar magnitudes showing that electrons and holes experience a similar energetic landscape. Subtle differences in the carrier concentration dependence between the polymers are observed, which are interpreted in terms of different degrees of energetic disorder on the basis of molecular dynamics and electronic structure simulations.

In this letter we compare the transistor performances of two solution-processed perylene derivatives: N,N'-bis (n-octyl)- dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN(2)) and N,N'-1H,1H-perfluorobutyl dicyanoperylenediimide (PDIF-CN(2)). Perylenediimide nitrogen functionalization with perfluoroalkyl vs. alkyl chains improves the electron mobility of solution-processed organic field effect transistors (OFETs) by one order of magnitude. Time resolved spectroscopy allows attributing this increment to a higher degree of co-facial arrangement of the fluorinated molecules. This supramolecular arrangement enhances the pi-pi overlap leading to more efficient electron transport.

Organic thin-film transistors using 5, 5(')-diperfluorohexylcarbonyl-2,2('):5('),2('):5('),2(')-quaterthiophene (DFHCO-4T) as the electron conducting organic semiconductor are fabricated and the performance of these transistors with different top-contact metals is investigated. Transistors with Au source-drain top contacts attain an apparent saturation mobility of 4.6 cm(2)/V s, whereas this parameter is 100 times lower for similar transistors with Al/LiF top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor charge injection properties resulting from a redox reaction between Al and DFHCO-4T. ispartof: Applied physics letters vol:93 issue:26 status: published

We have realized ambipolar ionic liquid gated field-effect transistors based on WS2 mono- and bilayers, and investigated their opto-electronic response. A thorough characterization of the transport properties demonstrates the high quality of these devices for both electron and hole accumulation, which enables the quantitative determination of the band gap ({\Delta}1L = 2.14 eV for monolayers and {\Delta}2L = 1.82 eV for bilayers). It also enables the operation of the transistors in the ambipolar injection regime with electrons and holes injected simultaneously at the two opposite contacts of the devices in which we observe light emission from the FET channel. A quantitative analysis of the spectral properties of the emitted light, together with a comparison with the band gap values obtained from transport, show the internal consistency of our results and allow a quantitative estimate of the excitonic binding energies to be made. Our results demonstrate the power of ionic liquid gating in combination with nanoelectronic systems, as well as the compatibility of this technique with optical measurements on semiconducting transition metal dichalcogenides. These findings further open the way to the investigation of the optical properties of these systems in a carrier density range much broader than that explored until now., Comment: 22 pages, 6 figures, Nano Letters (2014)