1. A fully integrated Class-J GaN MMIC power amplifier for 5-GHz WLAN 802.11ax application
- Author
-
Devrishi Khanna, Pilsoon Choi, Chirn Chye Boon, Mengda Mao, Bei Liu, Eugene A. Fitzgerald, and School of Electrical and Electronic Engineering
- Subjects
Physics ,Monolithic Microwave Circuit ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,Electrical engineering ,020206 networking & telecommunications ,Gallium nitride ,02 engineering and technology ,Condensed Matter Physics ,Signal ,Power (physics) ,chemistry.chemical_compound ,Electricity generation ,chemistry ,Modulation ,0202 electrical engineering, electronic engineering, information engineering ,Electrical and electronic engineering [Engineering] ,Electrical and Electronic Engineering ,802.11ax ,business ,Electrical impedance ,Microwave - Abstract
This letter presents a fully integrated Class-J GaN monolithic microwave circuit power amplifier (PA), which is fabricated in Woolfspeed 0.25- $\mu \text{m}$ GaN-on-SiC technology. This PA is the first published design for the emerging IEEE 802.11ax application in the literature. When tested with 80-MHz 256-quadratic-amplitude modulation 802.11ax signal with 11.25-dB peak-to-average power ratio, the PA delivers average output power of 27.3–30.3 dBm from 4.9 to 5.9 GHz, with power-added efficiency of 16.7% to 27.3%, while meeting the standard specification of error vector magnitude below −32 dB.
- Published
- 2018