1. Synthetic and Spectroscopic Study of the Mechanism of Atomic Layer Deposition of Tin Dioxide
- Author
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Steven J. Kraft, Matthew S. Weimer, Carlo U. Segre, Bo Hu, Adam S. Hock, and Roy G. Gordon
- Subjects
X-ray absorption spectroscopy ,Diffuse reflectance infrared fourier transform ,Tin dioxide ,Organic Chemistry ,Resonance Raman spectroscopy ,Inorganic chemistry ,chemistry.chemical_element ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Inorganic Chemistry ,chemistry.chemical_compound ,Atomic layer deposition ,symbols.namesake ,chemistry ,symbols ,Physical chemistry ,Physical and Theoretical Chemistry ,Thin film ,0210 nano-technology ,Tin ,Raman spectroscopy - Abstract
This study details the surface reaction chemistry relevant to the vapor deposition mechanism of SnO2 thin films by atomic layer deposition. The mechanism was elucidated by combining different spectroscopic studies. Initial nucleation of cyclic N2,N3-di-tert-butylbutane-2,3-diamidotin(II) (1) consists of surface SiOH protonation of ligands as shown by diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS). This SiO2-surface-bound stannylene was further characterized by X-ray absorption (XAS) and resonance Raman spectroscopy. XAS, DRIFTS, and Raman spectroscopy were then used to follow the further reaction of the surface-bound stannylene with different oxygen sources and a second equivalent of 1. It was observed that water does not oxidize the initial surface-bound tin site, and a well-defined, three-coordinate tin(II) species, with two surface oxygen bonds and one coordinated water molecule, was characterized. Treatment of the surface stannylene with protic oxidants such as H2O2 or tBuOOH ful...
- Published
- 2016
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