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A family of 1,1,1,2,2,2-hexaamino-disilanes with the formula (RHN)3Si-Si(NHR)3 (R = nPr, iPr, nBu, iBu, sBu, Cy) as precursors for the CVD growth of silicon-based films has been synthesized and characterized by 1H NMR, 13C NMR, 29Si NMR, EI-HRMS, elemental analysis and X-ray diffraction where necessary. Thermal properties, including stability, volatility, transport behavior and vapor pressure were evaluated by thermogravimetric analysis (TGA) to verify that thermal properties of the precursors can be tuned by small variation of the substituents form secondary amino to primary amino units and to confirm their suitability for the CVD procedure. Finally, deposition was accomplished in a hot wall CVD reactor, which preliminarily verified the ability of these compounds as CVD precursors.

The title compounds of the type R-C(=NiPr) (-N′ iPrSiMe3) (with R = Me or nBu) as potential chemical vapor deposition (CVD) precursors have been synthesized and characterized by 1H, 13C, and 29Si NMR spectroscopy as well as by EI-MS and elemental analysis where necessary. Thermal properties, including stability, volatility, transport behavior, and vapor pressure, were evaluated by thermogravimetric analysis to confirm that they are suitable for the CVD procedure. Deposition was accomplished in a hot wall CVD reactor system, which qualitatively verified the ability of these compounds as CVD precursors.

Silicon(IV) amide Si(c-C5H9NH)4 (1), was synthesized and characterized by 1H, 13C, and 29Si NMR spectroscopy, EI-MS, elemental analysis, and X-ray diffraction. Its thermal stability and volatility were also investigated. The as-grown film, which was characterized by SEM, AFM, XRD and XPS, was deposited using 1 as single precursor through a low-pressure chemical vapor deposition (LPCVD) process at a temperature as low as 600 °C. The results demonstrated that silicon(IV) amides can be promising single-precursor for deposition of low-temperature SiC films.

Reduction of tertiary phosphine oxides and sulfides into the corresponding phosphines with amine-assisted aluminum hydrides has been studied. The method is characterized by mild conditions, short reaction time, high efficiency, and expanded substrate scope. The new method is an alternative to the currently used methods of reducing phosphine oxides or recycling phosphines engaged in organic reactions.

A family of silicon(IV) compounds, where the Si centers of trimethylsilyl (–SiMe3) are linked with 2-alkyl-aminopyridine ligands, has been synthesized by reaction of the corresponding lithium salt of these ligands and SiMe3Cl in a general procedure. They were characterized by 1H NMR, 13C NMR, 29Si NMR, EI-MS and elemental analysis where necessary. Thereinto, 29Si NMR and the synthesis of 2-N,N-bis(trimethylsilyl)aminopyridine were achieved for the confirmation of their coordination structures. Significantly, the evaluation of these silicon compounds containing 2-aminopyridinates as CVD precursors was discussed for the first time. Thermal stability, transport behavior and vapour pressures were assessed by simultaneous thermal analyses (STA). Chemical vapor deposition was accomplished in a hot wall CVD reactor system to qualitatively demonstrate the ability of them as CVD precursors.

The title compounds of the type (Me3Si)2N–C(N′R)(–N′′RSiMe3) (with R = iPr or Cy) as potential CVD precursors have been synthesized and characterized by X-ray diffraction, 1H NMR, 13C NMR, 29Si NMR and elemental analysis where necessary. Among these characterizations, solid-/liquid-state 29Si NMR were accomplished to study their behavior in the solid and solution. Thermal properties including stability, volatility, transport behavior and vapour pressure were evaluated by thermogravimetric analysis (TGA) to confirm that they are suitable for the CVD procedure. Deposition was accomplished in a hot wall CVD reactor system, which preliminarily verified the ability of these compounds as CVD precursors.

A family of silicon (IV) compounds containing N,N’-symmetrically alkyl substituted 1,3-diketimine ligands as chemical vapor deposition (CVD) precursors for silicon-based films has been reported and characterized by 1H, 13C, and 29Si NMR, EI-MS and elemental analysis where necessary. The compounds were synthesized by reaction of corresponding lithium salt of the diketimine ligands and SiMe3Cl according to a general procedure. Theoretical simulation was performed io order to understand their structures. Thermal stability, transport behavior and vapor pressures were evaluated by simultaneous thermal analyses (STA). Chemical vapor deposition was accomplished in a hot wall CVD reactor system to further demonstrate the ability of these compounds as CVD precursors. Characterization (SEM and XPS) of the as-grown films proved that the family indeed possesses the potential to fabricate silicon-based films with compact and uniform structure.