1. The influence of oxygen content in the sputtering gas on the self-synthesis of tungsten oxidenanowires on sputter-deposited tungsten films.
- Author
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Chao-Hsuing CC Chen, Shui-Jinn SW Wang, Rong-Ming RK Ko, Yi-Cheng YK Kuo, Kai-Ming KU Uang, Tron-Min TC Chen, Bor-Wen BL Liou, and Hao-Yi HT Tsai
- Subjects
CHROMIUM group ,NANOSTRUCTURED materials ,NANOWIRES ,TUNGSTEN - Abstract
The self-synthesis of tungsten oxide(W18O49) nanowires on sputter-deposited W films prepared under differentO2/Ar flow rate ratios (OAFRRs) in the sputtering gas is reported. After thermally annealing at700–850 °C in N2 ambient for 15 min, dense and well crystallineW18O49 (010) nanowires or nanobelts were obtained depending on the oxygen content in the sputteringgas. Experimental results show that the annealing temperature required for the full growth ofW18O49 nanowires reduced when the OAFRR in the sputtering gas was increased. It is found thatthe oxygen absorbed in the surface region is responsible for the growth of nanowires. As theOAFRR was increased to (8 sccm)/(24 sccm), which resulted in a saturated oxygencontent of about 55 at.% inside the W film, large-scale nanobelts or nanosheets ofW18O49 were grown. The possible growth mechanism which governs the evolution from nanowires tonanobelts as the OAFRR was changed is also discussed. [ABSTRACT FROM AUTHOR]
- Published
- 2006
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